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Littelfuse Inc IXBF55N300 Disc Igbt Bimsft-Veryhivolt I4-Pak Iso+/; \|Littelfuse IXBF55N300
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXBF55N300	Bulk			300	1 - 10 - 100 - 1000 $121.02 10000 $113.45	Buy Now
RS	IXBF55N300	Bulk		8 Weeks	25	1 - 10 - 100 $173.30 1000 $173.30 10000 $173.30	Get Quote
Onlinecomponents.com	IXBF55N300					1 - 10 - 100 $270.19 1000 $92.06 10000 $92.06	Buy Now
IXYS Corporation IXBF55N300 IGBTs High Voltage High Gain BIMOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IXBF55N300	Tube			300	1 - 10 - 100 - 1000 $124.07 10000 $124.07	Buy Now
TME	IXBF55N300				300	1 - 10 - 100 - 1000 $104.41 10000 $104.41	Get Quote

IXBF55N300 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXBF55N300 Abstract: transistor 537 b 360 isoplus ixys mounting Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF55N300 VCES = 3000V IC110 = 28A VCE sat ≤ 3.2V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C	Original	ixbf55n300 ic110 55n300 0-22-09-a +2transistor 537 b 360 isoplus ixys mounting	PDF
IXBF55N300 Abstract: 55N300 Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF55N300 VCES = 3000V IC110 = 28A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C	Original	ixbf55n300 ic110 55n300 0-22-09-a	PDF
IXBF55N300 Contextual Info: High Voltage, High Gain BIMOSFETTM IXBF55N300 VCES = 3000V IC110 = 34A VCE sat ≤ 3.2V Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	ic110 50/60hz ixbf55n300 100ms +255n300 11-03-11-c	PDF
Contextual Info: High Voltage, High Gain BIMOSFETTM VCES = 3000V IC110 = 34A VCE sat ≤ 3.2V IXBF55N300 Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	ic110 ixbf55n300 100ms 55n300 +111-03-11-c	PDF
IXGF30N400 Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 Contextual Info: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers	Original	o-264 ixbx55n300 plus247 ixbf55n300 +12o-268 o-247 ixgf30n400 ixgf4n400 ixgf25n250 pulser isoplus ixgf54n400 discrete igbts ixth1n250 ixbx64n250 ixgt25n250	PDF
IXBK55N300 Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250 Contextual Info: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking	Original	e153432 com/ixan0022 ixbk55n300 ixbf55n300 +8ixbh32n300 bimosfet radar system with circuit diagram ixbh20n300 ixbh12n300 bimos high speed bridge rectifier ixbh2n250	PDF