ISOPLUS Search Results

DSEE8-08CC

Abstract: 10P40
Contextual Info: DSEE 8-08CC HiPerDynFREDTM Epitaxial Diode IFAV = 10 A VRRM = 800 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 800 400 Type ISOPLUS 220LVTM DSEE 8-08CC 1 2 3 G Preliminary Data Sheet Conditions Maximum Ratings A A IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine

35N120D1

Abstract: D-68623 IXER 35N120D1
Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C

24N50

Abstract: 26N50 .24n50 IXFH26N50 IXFR24N50 IXFR26N50
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family

ixys dsi

Abstract: 30-08AC 30-12AC ir 2411
Contextual Info: DSI 30 Rectifier Diode ISOPLUS220TM VRRM = 800 - 1200 V IF AV M = 30 A Electrically Isolated Back Surface VRSM VRRM V V 900 1300 800 1200 Type ISOPLUS 220TM DSI 30-08AC DSI 30-12AC A C Preliminary Data Sheet C A Symbol IFRMS IFAV IFSM I2t Conditions Maximum Ratings

Contextual Info: Advanced Technical Information Dual HiPerFREDTM Epitaxial Diode DSEE 55-24N1F in ISOPLUS i4-PACTM VRRM = 2400 V IF AV M = 55 A trr = 220 ns 1 3 1 3 5 5 Features Rectifier Bridge Symbol Conditions Maximum Ratings VRRM c VRRM IFAV IF(AV)M IFSM TC = 90°C; sine 180°

metal rectifier diode

Contextual Info: Three Phase Rectifier Bridge FUO 22-12N in ISOPLUS i4-PACTM VRRM = 1200 V ID AV M = 27 A IFSM = 100 A Preliminary Data 1 5 Symbol Features Conditions Maximum Ratings VRRM IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode) TC = 90°C TVJ = 25°C; t = 10 ms; sine 50 Hz

60n6

Abstract: 60N60 IC tl 072 IC100 60N60U1
Contextual Info: Low VCE sat IGBT with Diode IXGR 60N60U1 ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600

TO247AD

Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247
Contextual Info: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions

50n50

Abstract: 55N50 150N50 IXFK55N50
Contextual Info: VDSS HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 RDS(on) Ω 100 mΩ Ω 90 mΩ 500 V 43 A 500 V 48 A trr ≤ 250 ns Single Die MOSFET Maximum Ratings ISOPLUS 247TM Symbol Test Conditions VDSS VDGR

26N50

Abstract: IXFC 26N50 IXFH26N50 24N50 ixfc26n50 .26n50 .24n50 IXFC24N50
Contextual Info: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface IXFC 26N50 IXFC 24N50 ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM

Contextual Info: HiPerFETTM Power MOSFETs IXFR 58N20Q ISOPLUS247TM Q-Class Electrically Isolated Back Surface VDSS = = ID25 RDS(on) = 200 V 50 A Ω 40 mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet

ISOPLUS-264

Abstract: CPC1786J CPC1976Y ISOPLUS264 CPC1708J cpc1909 CPC1906Y CPC1709J CPC1978J CPC1916Y
Contextual Info: Power Solid State Relays i4-PAC , ISOPLUS264, and the Power SIP Relays Features • Solid State Reliability • Handle loads up to 15Arms • Voltage ratings from 60V - 1000V • Low On Resistance • Compact i4-PAC™ Package with low thermal resistance and heat sink

16-06A

Abstract: DSEA16-06AC 1606a
Contextual Info: DSEA16-06AC IFAV = 2x8 A VRRM = 600 V trr = 35 ns HiPerFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VRRM V V 600 600 Type DSEA16-06AC ISOPLUS220TM 1 2 1 3 2 3 Isolated back surface * * Patent pending Symbol

150N15

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 150N15 VDSS = 150 V ID25 = 105 A RDS on = 12.5 mW (Electrically Isolated Backside) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

DA QG

Contextual Info: Advanced Technical Information HiPerFETTM Power Mosfet FMM 75-01F ID25 VDSS RDSon -Phaseleg Topologyin ISOPLUS i4-PACTM = 75 A = 100 V = 25 mW 1 5 MOSFETs Features Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C IF25

metal rectifier diode

Abstract: 4 pin bridge rectifier package FBO16-12N E 72873
Contextual Info: FBO16-12N VRRM = 1200 V Single Phase Rectifier Bridge ID AV M = 22 A IFSM = 100 A in ISOPLUS i4-PACTM Preliminary Data 1 5 Rectifier Bridge Symbol Features Conditions Maximum Ratings VRRM IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode) TC = 90°C TVJ = 25°C; t = 10 ms; sine 50 Hz

70N15

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 70N15 ISOPLUS247TM Electrically Isolated Backside trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

DSEC29

Abstract: DSEC 29 DSEC
Contextual Info: HiPerFREDTM Epitaxial Diode DSEA 59-06BC DSEC 59-06BC = 2x30 A = 600 V = 35 ns IFAV VRRM trr ISOPLUS220TM Electrically Isolated Back Surface DSEA Preliminary Data Sheet VRSM VRRM V V 600 600 ISOPLUS220TM E153432 Type 1 DSEC 2 3 2 3 DSEA 59-06BC DSEC 59-06BC

CoolMOS Power Transistor

Abstract: POWER MOSFET 4600 UPS SIEMENS 25N80C
Contextual Info: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V ID25 = 20 A Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

35N120

Contextual Info: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20

IXGR40N60

Abstract: 40n60 40N60c 40N60CD1 IXGR40N60CD1
Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 75 A = 2.5 V = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

transistor da 307

Abstract: 24N10
Contextual Info: Advanced Technical Information HiPerFETTM IXFF 24N100 ID25 = 22 A VDSS = 1000 V Power Mosfet RDSon = 390 mW in High Voltage ISOPLUS I4-PACTM 1 5 Features MOSFETs Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C

200n60

Abstract: robot control
Contextual Info: Preliminary Data Sheet HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat tfi = = = = 600 V 175 A 2.1 V 160ns E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous

70n60

Abstract: IXFL70N60Q2
Contextual Info: Preliminary Technical Information IXFL70N60Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 600V 37A Ω 88mΩ 250ns ISOPLUS264