35N120D1
Abstract: D-68623 IXER 35N120D1
Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C
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Original
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35N120D1
247TM
E153432
35N120D1
D-68623
IXER 35N120D1
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DIODE 0644
Abstract: 35N120D1 IXER 35N120D1 diode RG 39
Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50A =1200V VCES VCE sat typ. = 2.2V in ISOPLUS247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol 1200 V ± 20 V -o VGES TC = 25°C TC = 90°C
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Original
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35N120D1
ISOPLUS247TM
247TM
E153432
DIODE 0644
35N120D1
IXER 35N120D1
diode RG 39
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PDF
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35N120D1
Abstract: D-68623 8200T u2003
Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C
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Original
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35N120D1
247TM
E153432
35N120D1
D-68623
8200T
u2003
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PDF
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35N120D1
Abstract: D-68623 ISOPLUS weight
Contextual Info: Advanced Technical Information IXER 35N120D1 IC25 NPT3 IGBT with Diode VCES VCE sat typ. in ISOPLUS 247TM = 50 A = 1200 V = 2.2 V ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol
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Original
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35N120D1
247TM
E153432
D-68623
ISOPLUS weight
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PDF
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35N120D1
Abstract: 35n120
Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C
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Original
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35N120D1
247TM
E153432
35N120D1
35n120
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PDF
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DIODE 0644
Abstract: 35N120D1
Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50A =1200V VCES VCE sat typ. = 2.2V in ISOPLUS247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES 1200 V ± 20 V IC25 IC90 TC = 25°C
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Original
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35N120D1
ISOPLUS247TM
247TM
E153432
DIODE 0644
35N120D1
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PDF
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Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50A VCES =1200V VCE sat typ. = 2.2V in ISOPLUS247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate Maximum Ratings VCES TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C
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Original
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35N120D1
ISOPLUS247TM
247TM
E153432
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PDF
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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Original
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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30N120D1
Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1
Contextual Info: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120
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OCR Scan
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O-268
35-06C
40-06D
OT-227B
50-12E
50-12BD
30N120D1
55N120D1
35N60BD1
30n120d
35N60B
transistor c90
40N120D1
20N120D1
60N120
20N60BD1
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