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IXYS Corporation


IXYS Corporation CPC1709J Solid State Relays - PCB Mount DC Only Single Pole i4-PAC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	CPC1709J	Tube			25	1 - 10 - 100 $14.75 1000 $14.75 10000 $14.75	Buy Now
IXYS Corporation CPC1979J Solid State Relays - PCB Mount SPST iso PLUS-264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	CPC1979J	Tube			100	1 - 10 - 100 $28.60 1000 $28.60 10000 $28.60	Buy Now
IXYS Corporation CPC1916Y Solid State Relays - PCB Mount 100V Single Pole SIP Power Relay
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	CPC1916Y	Tube			100	1 - 10 - 100 $8.27 1000 $8.27 10000 $8.27	Buy Now
IXYS Corporation CPC1909J Solid State Relays - PCB Mount 60V Single Pole 60V Power Relay
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	CPC1909J	Tube			100	1 - 10 - 100 $18.31 1000 $18.31 10000 $18.31	Buy Now
IXYS Corporation CPC1718J Solid State Relays - PCB Mount DC Only Single Pole i4-PAC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	CPC1718J	Tube			100	1 - 10 - 100 $12.87 1000 $12.87 10000 $12.87	Buy Now

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ISOPLUS264 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ISOPLUS-264 Abstract: CPC1786J CPC1976Y ISOPLUS264 CPC1708J cpc1909 CPC1906Y CPC1709J CPC1978J CPC1916Y Contextual Info: Power Solid State Relays i4-PAC , ISOPLUS264, and the Power SIP Relays Features • Solid State Reliability • Handle loads up to 15Arms • Voltage ratings from 60V - 1000V • Low On Resistance • Compact i4-PAC™ Package with low thermal resistance and heat sink	Original	isoplus264 15arms optically-coup264 q1-05 +9isoplus-264 cpc1786j cpc1976y cpc1708j cpc1909 cpc1906y cpc1709j cpc1978j cpc1916y	PDF
70n60 Abstract: IXFL70N60Q2 Contextual Info: Preliminary Technical Information IXFL70N60Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 600V 37A Ω 88mΩ 250ns ISOPLUS264	Original	ixfl70n60q2 250ns isoplus264 70n60q2 +28-08-a 70n60	PDF
ixfn36n100 Contextual Info: HiPerFETTM Power MOSFETs IXFL 34N100 VDSS = 1000 V ID25 = 30 A ISOPLUS264TM RDS on = 0.28 Ω (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions	Original	34n100 isoplus264tm ixfn36n100 728b1 +2123b1 065b1	PDF
44N80 Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS264TM IXFL 44N80 Electrically Isolated Backside VDSS = 800 V ID25 = 44 A RDS(on) = 0.165 Ω Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions Maximum Ratings	Original	isoplus264tm 44n80 728b1 123b1 +1065b1	PDF
Contextual Info: IXFL 60N80P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 800 V = 40 A Ω RDS on ≤ 150 mΩ ≤ 250 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	60n80p isoplus264tm isoplus264	PDF
132N50P3 Abstract: 66a 017 Contextual Info: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFL132N50P3 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 500V 63A Ω 43mΩ 250ns ISOPLUS264 Symbol Test Conditions	Original	ixfl132n50p3 250ns isoplus264 132n50p3 +166a 017	PDF
MOSFET 60n60 Abstract: 60N60 IXFL60N60 Z 728 Contextual Info: HiPerFETTM Power MOSFETs IXFL 60N60 VDSS ISOPLUS264TM = 600 V = 60 A Ω = 80 mΩ ID25 Electrically Isolated Backside RDS(on) Single Die MOSFET Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	60n60 isoplus264tm 728b1 123b1 +4065b1 mosfet 60n60 ixfl60n60 z 728	PDF
IXFN39N90 Contextual Info: HiPerFETTM Power MOSFETs IXFL 39N90 VDSS ID25 ISOPLUS264TM RDS on t (Electrically Isolated Backside) Single Die MOSFET = 900 V = 34 A Ω = 220 mΩ < ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions	Original	39n90 isoplus264tm ixfn39n90 728b1 +2123b1 065b1	PDF
100N50P Abstract: 100n50 S20NF Contextual Info: IXFL 100N50P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 500 V = 70 A Ω RDS on ≤ 52 mΩ ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C	Original	100n50p isoplus264tm isoplus264 100n50 +1s20nf	PDF
Contextual Info: Preliminary Technical Information Polar3TM HiPerFETTM Power MOSFET IXFL210N30P3 VDSS ID25 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   300V 108A  16m 250ns ISOPLUS264 Symbol Test Conditions	Original	ixfl210n30p3 250ns isoplus264 100ms +1210n30p3	PDF
Contextual Info: HiPerFETTM Power MOSFET ISOPLUS264TM VDSS = ID25 = RDS on ≤ IXFL34N100 1000V 30A Ω 280mΩ (Electrically Isolated Tab) Single-Die MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr ISOPLUS264 Symbol Test Conditions VDSS VDGR	Original	isoplus264tm ixfl34n100 isoplus264 ixfn36n100 +1338b2	PDF
IXFL34N100 Abstract: IXFN36N100 Contextual Info: IXFL34N100 HiPerFETTM Power MOSFET ISOPLUS264TM VDSS = ID25 = RDS on ≤ 1000V 30A Ω 280mΩ (Electrically Isolated Tab) Single-Die MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr ISOPLUS264 Symbol Test Conditions VDSS VDGR	Original	ixfl34n100 isoplus264tm isoplus264 00a/s +2ixfn36n100 338b2	PDF
Contextual Info: IXFL132N50P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   500V 63A  43m 250ns ISOPLUS264 Symbol Test Conditions Maximum Ratings VDSS	Original	ixfl132n50p3 250ns isoplus264 132n50p3 +2k9-w38 2-14-a	PDF
Contextual Info: Preliminary Technical Information IXFL132N50P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   500V 63A  43m 250ns ISOPLUS264 Symbol Test Conditions	Original	ixfl132n50p3 250ns isoplus264 132n50p3	PDF

IXGL50N60BD1 Abstract: ixgl50n60 Contextual Info: HiPerFASTTM IGBT ISOPLUS264TM IXGL 50N60BD1 VCES IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) = 600 V = 75 A = 2.3 V = 85 ns Preliminary data sheet (D1) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	isoplus264tm 50n60bd1 ic110 isoplus-264tm +4o-26rr 2x61-06a ixgl50n60bd1 ixgl50n60	PDF
IXFL38N100Q2 Abstract: 38N100 152AA Contextual Info: IXFL38N100Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 1000V 29A Ω 280mΩ 300ns ISOPLUS264TM( IXFL) Symbol Test Conditions Maximum Ratings VDSS	Original	ixfl38n100q2 300ns isoplus264tm 38n100q2 +35-27-08-b 38n100 152aa	PDF
IXFL210N30P3 Contextual Info: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET IXFL210N30P3 VDSS ID25 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 300V 108A Ω 16mΩ 250ns ISOPLUS264 Symbol Test Conditions	Original	ixfl210n30p3 250ns isoplus264 100ms +1210n30p3	PDF
Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS264TM IXFL 44N80 Electrically Isolated Backside VDSS = 800 V ID25 = 44 A RDS(on) = 0.165 Ω Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions Maximum Ratings	Original	isoplus264tm 44n80 150unless 728b1 +2123b1 065b1	PDF
Contextual Info: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFL210N30P3 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 300V 108A Ω 16mΩ 250ns ISOPLUS264 Symbol Test Conditions	Original	ixfl210n30p3 250ns isoplus264 -55ng +2100ms 210n30p3	PDF
80S23 Contextual Info: IXFL 82N60P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS = 600 V ID25 = 82 A Ω RDS on ≤ 78 mΩ ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	82n60p isoplus264tm 80s23	PDF
60N80P Abstract: 60N80 IXFL60N80P Contextual Info: IXFL 60N80P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 800 V = 40 A Ω RDS on ≤ 150 mΩ ≤ 250 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	60n80p isoplus264tm isoplus264 60n80 +1ixfl60n80p	PDF
34n100 Abstract: jm 60 ac Contextual Info: HiPerFETTM Power MOSFETs IXFL 34N100 VDSS = 1000 V 30 A ID25 = ISOPLUS 264TM ISOPLUS264 RDS on = 0.28 Ω (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions	Original	34n100 isoplus264 isoplus264tm isoplus-264tm +2728b1 jm 60 ac	PDF
80N50Q2 Abstract: IXFL80N50Q2 Contextual Info: IXFL80N50Q2 HiPerFETTM Power MOSFET Q2-Class Electrically Isolated Tab VDSS = ID25 = RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr ISOPLUS264TM( IXFL) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	ixfl80n50q2 isoplus264tm 80n50q2 5-2-08-g	PDF
70n60 Abstract: IXFL70N60Q2 Contextual Info: IXFL70N60Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 600V 37A Ω 92mΩ 250ns ISOPLUS264 Symbol Test Conditions Maximum Ratings	Original	ixfl70n60q2 250ns isoplus264 26lts +370n60q2 8-08-a 70n60	PDF

ISOPLUS264 Search Results

ISOPLUS264 Price and Stock

IXYS Corporation CPC1709J

IXYS Corporation CPC1979J

IXYS Corporation CPC1916Y

IXYS Corporation CPC1909J

IXYS Corporation CPC1718J

ISOPLUS264 Datasheets Context Search

ISOPLUS-264

70n60

ixfn36n100

44N80

132N50P3

MOSFET 60n60

IXFN39N90

100N50P

IXFL34N100

IXGL50N60BD1

IXFL38N100Q2

IXFL210N30P3

80S23

60N80P

34n100

80N50Q2

70n60