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    60N80P Search Results

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    60N80P Price and Stock

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    Littelfuse Inc IXFL60N80P

    Mosfet, N-Ch, 800V, 40A, Isoplus-264; |Littelfuse IXFL60N80P
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    Newark () IXFL60N80P Bulk 1
    • 1 $42.40
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    IXFL60N80P Bulk 300
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    RS IXFL60N80P Bulk 8 Weeks 25
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    • 100 $37.23
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    IXYS Corporation IXFN60N80P

    Mosfet, N, Sot-227B; |Ixys Semiconductor IXFN60N80P
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    Newark IXFN60N80P Bulk 300
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    TTI IXFN60N80P Tube 300
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    TME IXFN60N80P 294 1
    • 1 $44.57
    • 10 $40.82
    • 100 $40.82
    • 1000 $40.82
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    Littelfuse Inc IXFB60N80P

    Discmosfetn-Ch Hiperfet-Polar To-264(3)/; |Littelfuse IXFB60N80P
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    Newark () IXFB60N80P Bulk 300
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    IXFB60N80P Bulk 1
    • 1 $39.57
    • 10 $39.57
    • 100 $39.57
    • 1000 $39.57
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    RS IXFB60N80P Bulk 8 Weeks 25
    • 1 -
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    • 100 $34.74
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    Littelfuse Inc IXFN60N80P

    DiscMSFT N-CH HiPerFET-PolaSOT-227B(mini
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    RS IXFN60N80P Bulk 8 Weeks 10
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    IXYS Corporation IXFL60N80P

    MOSFETs 42 Amps 800V 0.15 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXFL60N80P Tube 300
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    TME IXFL60N80P 1
    • 1 $31.92
    • 10 $25.42
    • 100 $23.63
    • 1000 $23.63
    • 10000 $23.63
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    60N80P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IXFL 60N80P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 800 V = 40 A Ω RDS on ≤ 150 mΩ ≤ 250 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original
    60n80pisoplus264tmisoplus264 PDF

    60N80

    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFB 60N80P VDSS = 800 V ID25 = 60 A Ω RDS on ≤ 140 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original
    60n80pplus264tm60n80 PDF

    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 60N80P VDSS ID25 = 800 V = 53 A Ω RDS on ≤ 140 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original
    60n80p PDF

    60N80P

    Abstract: 60N80 IXFL60N80P
    Contextual Info: IXFL 60N80P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 800 V = 40 A Ω RDS on ≤ 150 mΩ ≤ 250 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original
    60n80pisoplus264tmisoplus26460n80+1ixfl60n80p PDF

    60n80p

    Abstract: 60N80 ixfb60n80p IXFb 60N80P
    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFB 60N80P VDSS = 800 V ID25 = 60 A Ω RDS on ≤ 140 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original
    60n80p60n80ixfb60n80pixfb 60n80p PDF

    IXFN 60N80P

    Abstract: ixfn60n80p 60N80 60N80P
    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 60N80P VDSS ID25 = 800 V = 53 A Ω RDS on ≤ 140 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original
    60n80pixfn 60n80pixfn60n80p60n80 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF