60N80P Search Results
60N80P Price and Stock
Littelfuse Inc IXFL60N80PMosfet, N-Ch, 800V, 40A, Isoplus-264; |Littelfuse IXFL60N80P |
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IXFL60N80P | Bulk | 1 |
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| IXFL60N80P | Bulk | 300 |
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IXFL60N80P | Bulk | 8 Weeks | 25 |
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IXYS Corporation IXFN60N80PMosfet, N, Sot-227B; |Ixys Semiconductor IXFN60N80P |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXFN60N80P | Bulk | 300 |
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IXFN60N80P | Tube | 300 |
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IXFN60N80P | 294 | 1 |
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Littelfuse Inc IXFB60N80PDiscmosfetn-Ch Hiperfet-Polar To-264(3)/; |Littelfuse IXFB60N80P |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXFB60N80P | Bulk | 300 |
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| IXFB60N80P | Bulk | 1 |
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IXFB60N80P | Bulk | 8 Weeks | 25 |
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Littelfuse Inc IXFN60N80PDiscMSFT N-CH HiPerFET-PolaSOT-227B(mini |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXFN60N80P | Bulk | 8 Weeks | 10 |
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IXYS Corporation IXFL60N80PMOSFETs 42 Amps 800V 0.15 Rds |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXFL60N80P | Tube | 300 |
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IXFL60N80P | 1 |
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60N80P Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IXFL 60N80P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 800 V = 40 A Ω RDS on ≤ 150 mΩ ≤ 250 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings |
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60n80pisoplus264tmisoplus264 | |
60N80Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFB 60N80P VDSS = 800 V ID25 = 60 A Ω RDS on ≤ 140 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ |
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60n80pplus264tm60n80 | |
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Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 60N80P VDSS ID25 = 800 V = 53 A Ω RDS on ≤ 140 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ |
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60n80p | |
60N80P
Abstract: 60N80 IXFL60N80P
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60n80pisoplus264tmisoplus26460n80+1 | |
60n80p
Abstract: 60N80 ixfb60n80p IXFb 60N80P
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60n80p60n80ixfb60n80pixfb 60n80p | |
IXFN 60N80P
Abstract: ixfn60n80p 60N80 60N80P
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60n80pixfn 60n80pixfn60n80p60n80 | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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ms-01310-pin5m-1994mo-229+10 |