60N80 Search Results
60N80 Price and Stock
onsemi NTD360N80S3ZMOSFETs MOSFET - Power, N-Channel, SUPERFET III, 800 V, 13 A, 360 mohm, DPAK |
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NTD360N80S3Z | 2,213 |
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onsemi FCH060N80-F155MOSFETs SuperFET2 800V |
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FCH060N80-F155 | 1,487 |
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IXYS Corporation IXFN60N80PMOSFET Modules DIODE Id54 BVdass800 |
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IXFN60N80P | 1,133 |
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IXFN60N80P | Tube | 300 |
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onsemi NTPF360N80S3ZMOSFETs MOSFET - Power, N-Channel, SUPERFET III, 800 V, 13 A, 360 mohm, TO-220F |
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NTPF360N80S3Z | 736 |
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onsemi NTP360N80S3ZMOSFETs MOSFET - Power, N-Channel, SUPERFET III, 800 V, 13 A, 360 mohm, TO-220 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NTP360N80S3Z | 627 |
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60N80 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IXFL 60N80P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 800 V = 40 A Ω RDS on ≤ 150 mΩ ≤ 250 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings |
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60N80P ISOPLUS264TM ISOPLUS264 | |
60N80Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFB 60N80P VDSS = 800 V ID25 = 60 A Ω RDS on ≤ 140 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ |
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60N80P PLUS264TM 60N80 | |
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Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 60N80P VDSS ID25 = 800 V = 53 A Ω RDS on ≤ 140 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ |
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60N80P | |
60N80P
Abstract: 60N80 IXFL60N80P
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60N80P ISOPLUS264TM ISOPLUS264 60N80P 60N80 IXFL60N80P | |
60n80p
Abstract: 60N80 ixfb60n80p IXFb 60N80P
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60N80P 60n80p 60N80 ixfb60n80p IXFb 60N80P | |
IXFN 60N80P
Abstract: ixfn60n80p 60N80 60N80P
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60N80P IXFN 60N80P ixfn60n80p 60N80 60N80P | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 |