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    Phoenix Contact 0914264 (TMC 1 F1 200 1 5A)

    CIRCUIT BREAKER THERMAL MAGNETIC 250V 1.5A LEVER DIN RAIL 65VDC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 0914264 (TMC 1 F1 200 1 5A) Bulk 1
    • 1 $126.08
    • 10 $119.78
    • 100 $113.47
    • 1000 $113.47
    • 10000 $113.47
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    264TM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    70n60

    Abstract: IXFB70N60Q2
    Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 70N60Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 600 V ID25 = 70 A Ω RDS on = 80 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		70n60q2264tm728b170n60+1ixfb70n60q2 PDF

    38N100Q

    Abstract: 98949
    Contextual Info: Advance Technical Information HiPerFET TM Power MOSFETs IXFB 38N100Q Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 1000 V ID25 = 38 A RDS on = 0.26 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		38n100q264tm150ited728b1+198949 PDF

    Contextual Info: HiPerFETTM Power MOSFETs IXFB 72N55Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 550 V ID25 = 72 A Ω RDS on = 72 mΩ ≤ 250 ns trr Preliminary Data Sheet PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		72n55q2264tm728b1123b1+1065b1 PDF

    50n80

    Abstract: 50N80Q2 50n8 IXFB 50N80Q2 IXFB50N80Q2 50N80Q
    Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		50n80q2264tm728b150n80+450n8ixfb 50n80q2ixfb50n80q250n80q PDF

    Contextual Info: Advance Technical Information HiPerFET TM Power MOSFETs VDSS = ID25 = RDS on = ≤ trr IXFB 80N50Q Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 500 V 80 A Ω 55 mΩ 250 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		80n50q264tm728b1 PDF

    38N100Q2

    Contextual Info: Advance Technical Information HiPerFET TM Power MOSFETs IXFB 38N100Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr = 1000 V V DSS ID25 = 38 A RDS on = 0.26 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		38n100q2264tm728b1 PDF

    IXFB

    Abstract: 50N80Q2 IXFB50N80Q2 50n80
    Contextual Info: HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		50n80q2264tmixfbixfb50n80q2+150n80 PDF

    IXFB

    Abstract: IXFB70N60Q2
    Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 70N60Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 600 V ID25 = 70 A Ω RDS on = 80 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		70n60q2264tm728b1065b1+3123b1ixfbixfb70n60q2 PDF

    IXFB38N100Q2

    Abstract: c2075
    Contextual Info: HiPerFETTM Power MOSFETs IXFB38N100Q2 VDSS = 1000 V ID25 = 38 A RDS on = 0.25 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		ixfb38n100q2264tm150voltsc2075 PDF

    50N80Q2

    Abstract: IXFB50N80Q2 264TM
    Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		50n80q2264tm150imited728b1+1ixfb50n80q2 PDF

    80N50Q2

    Abstract: 80n5 IXFB 80N50Q2
    Contextual Info: HiPerFETTM Power MOSFETs IXFB 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		80n50q2264tm065b1728b1+3123b180n5ixfb 80n50q2 PDF

    Contextual Info: ADVANCE TECHNICAL DATA IXGL 75N60BU1 VCES IC25 VCE sat tfi HiPerFASTTM IGBT with Diode ISOPLUS-264TM (Electrically Isolated) Mounting Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V


    Original     		isoplus-264tm75n60bu1728b1 PDF

    Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 38N100Q2 VDSS = 1000 V ID25 = 38 A RDS on = 0.26 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		38n100q2264tm728b1 PDF

    Contextual Info: HiPerFETTM Power MOSFETs IXFB38N100Q2 VDSS = 1000 V ID25 = 38 A RDS on = 0.25 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 300 ns Preliminary Data Sheet PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings


    Original     		ixfb38n100q2264tm728b1 PDF

    Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 72N55Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 550 V ID25 = 72 A Ω RDS on = 72 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		72n55q2264tm728b1 PDF

    80N50Q2

    Abstract: 16-20pF
    Contextual Info: Advance Technical Information HiPerFET TM Power MOSFETs IXFB 80N50Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr = V DSS ID25 = RDS on = ≤ trr 500 V 80 A Ω 55 mΩ 250 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		80n50q2264tm728b116-20pf PDF

    Contextual Info: HiPerFETTM Power MOSFETs IXFB38N100Q2 VDSS = 1000 V ID25 = 38 A RDS on = 0.25 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 300 ns Preliminary Data Sheet PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings


    Original     		ixfb38n100q2264tm728b1 PDF

    62N50L

    Abstract: IXTN62N50L
    Contextual Info: Power MOSFETs with Extended FBSOA IXTB 62N50L IXTN 62N50L VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 500 = 62 ≤ 0.1 V A Ω Preliminary Data Sheet PLUS 264TM (IXTB) Symbol Test Conditions Maximum Ratings IXTB IXTN VDSS TJ = 25oC to 150oC


    Original     		62n50l264tm150ocixtn62n50l PDF

    IXFB38N100Q2

    Abstract: c2075 c-2075
    Contextual Info: HiPerFETTM Power MOSFETs IXFB38N100Q2 VDSS = 1000 V ID25 = 38 A RDS on = 0.25 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 300 ns Preliminary Data Sheet PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings


    Original     		ixfb38n100q2264tm728b1123b1+3065b1c2075c-2075 PDF

    70n60

    Abstract: 70n6 IXFB70N60Q2
    Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 70N60Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 600 V ID25 = 70 A Ω RDS on = 80 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		70n60q2264tm728b170n60+270n6ixfb70n60q2 PDF

    34n100

    Abstract: jm 60 ac
    Contextual Info: HiPerFETTM Power MOSFETs IXFL 34N100 VDSS = 1000 V 30 A ID25 = ISOPLUS 264TM ISOPLUS264 RDS on = 0.28 Ω (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions


    Original     		34n100isoplus264isoplus264tmisoplus-264tm+2728b1jm 60 ac PDF

    Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		50n80q2264tm728b1 PDF

    Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 72N55Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 550 V ID25 = 72 A Ω RDS on = 72 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		72n55q2264tm728b1 PDF

    Contextual Info: HiPerFETTM Power MOSFETs IXFB 72N55Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 550 V ID25 = 72 A Ω RDS on = 72 mΩ ≤ 250 ns trr Preliminary Data Sheet PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		72n55q2264tm728b1123b1+1065b1 PDF