70N6 Search Results
70N6 Price and Stock
Infineon Technologies AG IKWH70N67PR7XKSA1IGBT, 140 A, 1.4 V, 313 W, 670 V, TO-247, 3 Pins - Rail/Tube (Alt: IKWH70N67PR7XKSA1) |
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IKWH70N67PR7XKSA1 | Tube | 240 | 45 Weeks | 240 |
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IKWH70N67PR7XKSA1 | Bulk | 195 | 1 |
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Vishay Intertechnologies SIHG70N60AEF-GE3- Tape and Reel (Alt: SIHG70N60AEF-GE3) |
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SIHG70N60AEF-GE3 | Tape & Reel | 35 Weeks | 500 |
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SIHG70N60AEF-GE3 | Bulk | 473 | 1 |
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SIHG70N60AEF-GE3 | Tube | 500 | 50 |
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SIHG70N60AEF-GE3 | 1 |
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SIHG70N60AEF-GE3 | 42 Weeks | 25 |
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Micron Technology Inc M29DW323DT70N6- Trays (Alt: M29DW323DT70N6) |
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M29DW323DT70N6 | Tray | 576 |
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Micron Technology Inc M29W400BB70N6- Trays (Alt: M29W400BB70N6) |
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M29W400BB70N6 | Tray | 576 |
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Vishay Intertechnologies RE70N62R0C02NH-25 62 1% RE70N62R0 C02 - Bulk (Alt: RE70N62R0C02) |
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RE70N62R0C02 | Bulk | 10 Weeks | 5 |
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RE70N62R0C02 | Tray | 5 |
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70N6 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IXKH 70N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 70 A VDSS = 600 V RDS on max = 0.045 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S D(TAB) Features MOSFET Conditions |
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70n60c5o-247 | |
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Contextual Info: HiPerFETTM Power MOSFET IXFN 70N60Q2 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr = 600 V = 70 A ≤ 80 mΩ Ω ≤ 250 ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings |
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70n60q2ot-227e153432 | |
70n60
Abstract: IXFB70N60Q2
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70n60q2264tm728b170n60+1 | |
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Contextual Info: IXKH 70N60C5 CoolMOS 1 Power MOSFET ID25 = 70 A VDSS = 600 V RDS on) max = 0.045 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S fl D(TAB) S Features MOSFET Symbol Conditions VDSS TVJ = 25°C |
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70n60c5o-24720090209d | |
IXFB
Abstract: IXFB70N60Q2
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70n60q2264tm728b1065b1+3 | |
DSA003710Contextual Info: IXKH 70N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 70 A VDSS = 600 V RDS on max = 0.045 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S q D(TAB) S Features MOSFET Conditions |
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70n60c5o-24720070625adsa003710 | |
70N60C5
Abstract: 70n60 IXKH70N60C5
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70n60c5o-24720090209d70n60+1 | |
70n60
Abstract: 70n6 IXFB70N60Q2
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70n60q2264tm728b170n60+2 | |
123B16
Abstract: IXFN70N60Q2 DS99029A
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70n60q2ot-227e153432728b1+5 | |
70n60Contextual Info: IXKH 70N60C5 Advanced Technical Information ID25 = 70 A = 600 V VDSS RDS on max = 0.045 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D S S D (TAB) Features MOSFET Conditions VDSS TVJ = 25°C |
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70n60c5o-24770n60 | |
IXKH70N60C5
Abstract: 70N60C5 70n60 TO-247 SD 431
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70n60c5o-24720080310bixkh70n60c5+3 | |
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Contextual Info: IXKH 70N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 70 A VDSS = 600 V RDS on max = 0.045 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S q D(TAB) S Features MOSFET Conditions |
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70n60c5o-24720070625a | |
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Contextual Info: 70N60M2 N-channel 600 V, 0.03 Ω typ., 68 A MDmesh II Plus low Qg Power MOSFET in a TO-247 package Datasheet − production data Features Order code VDS @ TJmax RDS on max ID 70N60M2 650 V 0.040 Ω 68 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation |
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stw70n60m2o-247docid024327 | |
70n60Contextual Info: 70N60M2 N-channel 600 V, 0.031 Ω typ., 68 A MDmesh II Plus low Qg Power MOSFET in a TO-247 package Datasheet − preliminary data Features Order code VDS @ TJmax RDS on max ID 70N60M2 650 V 0.040 Ω 68 A • Extremely low gate charge 2 • Lower RDS(on) x area vs previous generation |
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stw70n60m2o-247docid02432770n60 | |
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AM29F010
Abstract: 29F010 amd am29f010 CROSS REFERENCE programmer for 29F010 NEXFLASH 29f010 PLCC 29F010 DIP 45p6 Flash cross reference 90K-1
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nx29f010128kx8am29f010-45jcam29f010-55jc+16 | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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ms-01310-pin5m-1994mo-229+10 | |