80N50Q2
Abstract: 0169E 123B16
Contextual Info: Advance Technical Information HiPerFETTM Power MOSFET IXFN 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol
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80n50q2ot-227e153432728b1+4123b1065b10169e123b16
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80N50Q2
Abstract: 80n5 IXFB 80N50Q2
Contextual Info: HiPerFETTM Power MOSFETs IXFB 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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80n50q2264tm065b1728b1+3123b180n5ixfb 80n50q2
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Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 80N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions
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80n50q2264tm728b1123b1+1065b1
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80N50Q2
Abstract: IXFL80N50Q2
Contextual Info: HiPerFETTM Power MOSFETs IXFL 80N50Q2 VDSS = 500 V ID25 = 64 A Ω RDS on = 66 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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80n50q2405b2ixfl80n50q2 |
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80N50Q2
Abstract: 16-20pF
Contextual Info: Advance Technical Information HiPerFET TM Power MOSFETs IXFB 80N50Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr = V DSS ID25 = RDS on = ≤ trr 500 V 80 A Ω 55 mΩ 250 ns PLUS 264TM (IXFB) Symbol Test Conditions
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80n50q2264tm728b116-20pf |
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Contextual Info: Advance Technical Information HiPerFETTM Power MOSFET IXFN 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV /dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol
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IXFN SOT227
Abstract: 80n5
Contextual Info: HiPerFETTM Power MOSFET IXFN 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions S Maximum Ratings
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80n50q2ot-227e153432ixfn sot227+180n5
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2
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