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    82N60P Search Results

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    82N60P Price and Stock

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    IXYS Corporation IXFB82N60P

    MOSFET N-CH 600V 82A PLUS264
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    DigiKey IXFB82N60P Tube 23 1
    • 1 $30.68
    • 10 $30.68
    • 100 $19.43
    • 1000 $19.43
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    Mouser Electronics IXFB82N60P
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    TME IXFB82N60P 100 1
    • 1 $29.11
    • 10 $26.09
    • 100 $24.35
    • 1000 $24.35
    • 10000 $24.35
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    IXYS Corporation IXFL82N60P

    MOSFET N-CH 600V 55A ISOPLUS264
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    DigiKey IXFL82N60P Tube 1
    • 1 $32.82
    • 10 $32.82
    • 100 $21.14
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    Mouser Electronics IXFL82N60P
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    TTI IXFL82N60P Tube 300
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    TME IXFL82N60P 20 1
    • 1 $11.70
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    Chip 1 Exchange IXFL82N60P 1,723
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    IXYS Corporation IXFN82N60P

    MOSFET N-CH 600V 72A SOT-227B
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    DigiKey IXFN82N60P Tube 1
    • 1 $39.95
    • 10 $29.81
    • 100 $27.02
    • 1000 $27.02
    • 10000 $27.02
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    Mouser Electronics IXFN82N60P 380
    • 1 $43.10
    • 10 $35.75
    • 100 $32.40
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    Newark IXFN82N60P Bulk 1
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    TTI IXFN82N60P Tube 300
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    TME IXFN82N60P 1
    • 1 $41.97
    • 10 $32.21
    • 100 $31.81
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    IBS Electronics IXFN82N60P 10
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    Vyrian IXFN82N60P 113
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    Littelfuse Inc IXFB82N60P

    Discmosfetn-Ch Hiperfet-Polar To-264(3)/ Tube |Littelfuse IXFB82N60P
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    Newark IXFB82N60P Bulk 300
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    RS IXFB82N60P Bulk 8 Weeks 25
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    • 100 $27.65
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    Littelfuse Inc IXFL82N60P

    Discmosfetn-Ch Hiperfet-Polar Isoplus264/ Tube |Littelfuse IXFL82N60P
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    Newark IXFL82N60P Bulk 300
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    • 1000 $22.16
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    RS IXFL82N60P Bulk 8 Weeks 25
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    • 100 $30.08
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    82N60P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFB 82N60P VDSS = 600 V ID25 = 82 A RDS on ≤ 75 mΩ Ω ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		82N60P PLUS264TM PDF

    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFB 82N60P VDSS = 600 V ID25 = 82 A RDS on ≤ 75 mΩ Ω ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		82N60P PLUS264TM PDF

    80S23

    Contextual Info: IXFL 82N60P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS = 600 V ID25 = 82 A Ω RDS on ≤ 78 mΩ ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		82N60P ISOPLUS264TM 80S23 PDF

    41a 049

    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFB 82N60P VDSS = 600 V ID25 = 82 A Ω RDS on ≤ 75 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		82N60P PLUS264TM 41a 049 PDF

    IXFN 82N60P

    Abstract: IXFN82N60P 82N60P
    Contextual Info: IXFN 82N60P PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous ±30


    Original     		82N60P IXFN 82N60P IXFN82N60P 82N60P PDF

    82N60P

    Abstract: uA78 41a 034
    Contextual Info: IXFL 82N60P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS = 600 V ID25 = 82 A Ω RDS on ≤ 78 mΩ ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		82N60P ISOPLUS264TM 82N60P uA78 41a 034 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF