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    82N60P Search Results

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    82N60P Price and Stock

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    Littelfuse Inc IXFL82N60P

    Discmosfetn-Ch Hiperfet-Polar Isoplus264; |Littelfuse IXFL82N60P
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    Newark IXFL82N60P Bulk 300
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    RS IXFL82N60P Bulk 8 Weeks 25
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    Littelfuse Inc IXFB82N60P

    Mosfet, N-Ch, 600V, 82A, Plus264; |Littelfuse IXFB82N60P
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    Newark () IXFB82N60P Bulk 1
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    IXFB82N60P Bulk 25
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    Littelfuse Inc IXFN82N60P

    Discmsft N-Ch Hiperfet-Polasot-227B(Mini; |Littelfuse IXFN82N60P
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    RS IXFN82N60P Bulk 8 Weeks 10
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    IXYS Corporation IXFN82N60P

    MOSFET Modules DIODE Id82 BVdass600
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    TTI IXFN82N60P Tube 300
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    TME IXFN82N60P 1
    • 1 $43.57
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    IXYS Corporation IXFL82N60P

    MOSFETs 82 Amps 600V 0.78 Ohm Rds
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    TTI IXFL82N60P Tube 300
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    TME IXFL82N60P 18 1
    • 1 $11.19
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    82N60P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFB 82N60P VDSS = 600 V ID25 = 82 A RDS on ≤ 75 mΩ Ω ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		82n60pplus264tm PDF

    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFB 82N60P VDSS = 600 V ID25 = 82 A RDS on ≤ 75 mΩ Ω ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		82n60pplus264tm PDF

    80S23

    Contextual Info: IXFL 82N60P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS = 600 V ID25 = 82 A Ω RDS on ≤ 78 mΩ ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		82n60pisoplus264tm80s23 PDF

    41a 049

    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFB 82N60P VDSS = 600 V ID25 = 82 A Ω RDS on ≤ 75 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		82n60pplus264tm41a 049 PDF

    IXFN 82N60P

    Abstract: IXFN82N60P 82N60P
    Contextual Info: IXFN 82N60P PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous ±30


    Original     		82n60pixfn 82n60pixfn82n60p PDF

    82N60P

    Abstract: uA78 41a 034
    Contextual Info: IXFL 82N60P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS = 600 V ID25 = 82 A Ω RDS on ≤ 78 mΩ ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		82n60pisoplus264tmua7841a 034 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF