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    IXYS Corporation

    IXYS Corporation IXGR35N120BD1

    IGBTs 23 Amps 1200V 3.7 Rds
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    IXYS Corporation IXGK35N120BD1

    IGBTs 70 Amps 1200V 3.3 V Rds
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    IXYS Corporation IXGX35N120BD1

    IGBTs 70 Amps 1200V 3.3 V Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
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    35N120BD1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    35N120

    Contextual Info: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20


    Original     		247tm35n120bd1728b135n120 PDF

    Contextual Info: Advanced Technical Information IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		247tm35n120bd1 PDF

    Contextual Info: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20


    Original     		247tm35n120bd1728b1 PDF

    IXGX

    Contextual Info: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		35n120b35n120bd1o-264247tm+2728b1ixgx PDF

    Contextual Info: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 Electrically Isolated Backside Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


    Original     		247tm35n120bd1728b1 PDF

    IXGR35N120BD1

    Abstract: igbt induction cooker induction cooker IF110 ISOPLUS247 35n120 S2300
    Contextual Info: Advanced Technical Information IXGR 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200


    Original     		35n120bd1ic110if110405b2+6ixgr35n120bd1igbt induction cookerinduction cookerisoplus24735n120s2300 PDF

    Contextual Info: Advanced Technical Information IXGR 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200


    Original     		35n120bd1ic110if110405b2 PDF

    Contextual Info: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		35n120b35n120bd1o-264247tm+1728b1 PDF

    35N120BD1

    Abstract: PLUS247 592 diode 35N120B 247 AA 35N12 35n120
    Contextual Info: High Voltage IGBT with Diode IXSK 35N120BD1 IXSX 35N120BD1 Short Circuit SOA Capability Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM


    Original     		35n120bd1o-264o-247plus247+5592 diode35n120b247 aa35n1235n120 PDF

    Contextual Info: Advanced Technical Information IXGQ 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient


    Original     		35n120bd1ic110if110405b2 PDF

    Contextual Info: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V = 70 A IC25 VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		35n120b35n120bd1o-264247tm+1728b1 PDF

    35N120

    Contextual Info: Advanced Technical Information IXGQ 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient


    Original     		35n120bd1ic110if11035n120 PDF

    Contextual Info: High Voltage IGBT with Diode IXSK 35N120BD1 IXSX 35N120BD1 Short Circuit SOA Capability Preliminary data sheet Symbol TO-264 AA IXSK Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous


    Original     		35n120bd1o-264 PDF

    Contextual Info: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		35n120b35n120bd1o-264247tm+1728b1 PDF