35N12 Search Results

35N12 Price and Stock

Filter by Manufacturer

Select Manufacturer


TEKON Prüftechnik GmbH TK35N.12.0,80.S.170.R Test probe: ICT/FCT; 3A; Ø: 0.8mm; steel; Plating: rhodium plated
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	TK35N.12.0,80.S.170.R		20		1	1 $2.04 10 $1.81 100 $1.59 1000 $1.59 10000 $1.59	Buy Now
Infineon Technologies AG IPD35N12S3L24ATMA1 Transistor: N-MOSFET; unipolar; 120V; 35A; 71W; DPAK,TO252
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IPD35N12S3L24ATMA1				2,500	1 - 10 - 100 - 1000 - 10000 $0.69	Get Quote
Avnet Americas	IPD35N12S3L24ATMA1	Tape & Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.69	Buy Now
Mouser Electronics	IPD35N12S3L24ATMA1		22,011			1 $2.50 10 $1.22 100 $1.10 1000 $0.83 10000 $0.75	Buy Now
Rochester Electronics	IPD35N12S3L24ATMA1		17,327		1	1 - 10 - 100 $0.88 1000 $0.73 10000 $0.65	Buy Now
Goford Semiconductor GT035N12T Transistor: N-MOSFET; SGT; unipolar; 120V; 180A; 230W; TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	GT035N12T				1	1 $2.73 10 $2.44 100 $2.16 1000 $1.76 10000 $1.70	Get Quote
Goford Semiconductor GT035N12M Transistor: N-MOSFET; SGT; unipolar; 120V; 180A; 230W; TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	GT035N12M				1	1 $2.14 10 $1.92 100 $1.54 1000 $1.37 10000 $1.33	Get Quote
Glenair Inc IT4106T32-15SM35N12F11 5015 THREADED COUPLING CONNECTOR POWER PRODUCTS - Bulk (Alt: IT4106T32-15SM35N12F11)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IT4106T32-15SM35N12F11	Bulk		5 Weeks	1	1 $973.80 10 $410.54 100 $410.54 1000 $410.54 10000 $410.54	Buy Now
Mouser Electronics	IT4106T32-15SM35N12F11					1 $1029.58 10 $469.25 100 $469.25 1000 $469.25 10000 $469.25	Get Quote
Newark	IT4106T32-15SM35N12F11	Bulk			1	1 $888.61 10 $405.00 100 $316.86 1000 $316.86 10000 $316.86	Buy Now
Interstate Connecting Components	IT4106T32-15SM35N12F11					1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more 35N12 price and stock on Findchips.com

35N12 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
35N120D1 Abstract: D-68623 IXER 35N120D1 Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C	Original	35n120d1 247tm e153432 d-68623 +1ixer 35n120d1	PDF
35n120au1 Abstract: IXSX35N120AU1 IGBT 500V 35A 35N120AU Contextual Info: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous	Original	35n120au1 ixsx35n120au1 igbt 500v 35a 35n120au	PDF
35N120 Contextual Info: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20	Original	247tm 35n120bd1 728b1 35n120	PDF
IGBT 500V 35A Abstract: 35n120a Contextual Info: High Voltage, High speed IGBT IXSH 35N120A VCES IC25 VCE sat Maximum Ratings TO-247 AD = 1200 V = 70 A = 4V Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20	Original	35n120a o-247 s35n12 ixsh35n120 +1igbt 500v 35a	PDF
Contextual Info: Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C	Original	35n120b o-268 o-247	PDF
Contextual Info: Advance Technical Information IXGH 35N120C IXGT 35N120C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	35n120c o-247 o-268	PDF
IXSN35N120 Contextual Info: DIXYS High Voltage GBT with Diode IXSN 35N120AU1 VCES C25 V Symbol Test Conditions V CES T, = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M fl 1200 A V GES Continuous +20 V V ¥ gem Transient ±30 V ^C25 Tc = 25°C 70 A 'c a o T c = 90°C Maximum Ratings	OCR Scan	35n120au1 ot-227 ixsn35n120au1 4bflb22b +1ixsn35n120	PDF
Contextual Info: Advanced Technical Information IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	247tm 35n120bd1	PDF
IXLK35N120AU1 Contextual Info: IGBT with Diode IXLK 35N120AU1 VCES I C25 VCE sat = 1200 V = 58 A = 3.6 V High Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1200 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V V GES Continuous	Original	35n120au1 ixlk35n120au1	PDF
IXLN35N120AU1 Contextual Info: IGBT with Diode IXLN 35N120AU1 VCES I C25 VCE sat = 1200 V = 40 A = 3.5 V High Short Circuit SOA Capability Preliminary data E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1200 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V V GES Continuous	Original	35n120au1 ixln35n120au1	PDF
Contextual Info: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous	Original	35n120au1 150perature	PDF
Contextual Info: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous	Original	35n120au1 o-247tm ixsx35n120au1	PDF
Contextual Info: IXSH 35N120B IXST 35N120B IGBT "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE sat = 3.6 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous	Original	35n120b o-247 o-268	PDF
ixgh35n120b Contextual Info: Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C	Original	35n120b o-268 o-247 ixgh35n120b	PDF

Contextual Info: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20	Original	247tm 35n120bd1 728b1	PDF
IXGX Contextual Info: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	35n120b 35n120bd1 o-264 247tm +2728b1 ixgx	PDF
Contextual Info: OIXYS IGBT with Diode IXLK 35N120AU1 VCES = 1200 V = 58 A = 3.6 V C25 v CE sat High Short Circuit SOA Capability P re lim in a ry d a ta Symbol Test Conditions v CES v¥ T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE = 1 M il 1200 V cgr Maximum Ratings	OCR Scan	35n120au1 o-264	PDF
Contextual Info: Advanced Technical Information HiPerFASTTM IGBT IXGH 35N120B VCES = 1200 V = 70 A IXGT 35N120B IC25 VCE sat = 3.3 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20	Original	35n120b o-268 o-247	PDF
Contextual Info: Advanced Technical Information IGBT IXSH 35N120B IXST 35N120B "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE sat = 3.6 V Symbol Test Conditions TO-247 AD (IXSH) Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	35n120b o-247	PDF
Contextual Info: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 Electrically Isolated Backside Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	247tm 35n120bd1 728b1	PDF
Contextual Info: DIXYS IXSK 35N120AU1 High Voltage IGBT with Diode VCES I C25 vCE sat 1200 V 70 A 4V Short Circuit SOA Capability Prelim inary data Symbol Test C onditions V CES ^ V cO R Tj = 25° C to 150° C; Rge = 1 MC2 VGES v GEM Continuous +20 V Transient ±30 V ^C25	OCR Scan	35n120au1 to150 o-264aa jedecto-264aa	PDF
DIODE 0644 Abstract: 35N120D1 IXER 35N120D1 diode RG 39 Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50A =1200V VCES VCE sat typ. = 2.2V in ISOPLUS247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol 1200 V ± 20 V -o VGES TC = 25°C TC = 90°C	Original	35n120d1 isoplus247tm 247tm e153432 +3diode 0644 ixer 35n120d1 diode rg 39	PDF
35N120D1 Abstract: D-68623 8200T u2003 Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C	Original	35n120d1 247tm e153432 d-68623 +28200t u2003	PDF
IXGR35N120BD1 Abstract: igbt induction cooker induction cooker IF110 ISOPLUS247 35n120 S2300 Contextual Info: Advanced Technical Information IXGR 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200	Original	35n120bd1 ic110 if110 405b2 +6ixgr35n120bd1 igbt induction cooker induction cooker isoplus247 35n120 s2300	PDF

35N12 Search Results

35N12 Price and Stock

TEKON Prüftechnik GmbH TK35N.12.0,80.S.170.R

Infineon Technologies AG IPD35N12S3L24ATMA1

Goford Semiconductor GT035N12T

Goford Semiconductor GT035N12M

Glenair Inc IT4106T32-15SM35N12F11

35N12 Datasheets Context Search

35N120D1

35n120au1

35N120

IGBT 500V 35A

IXSN35N120

IXLK35N120AU1

IXLN35N120AU1

ixgh35n120b

IXGX

DIODE 0644

35N120D1

IXGR35N120BD1