35N120C Search Results

Contextual Info: Advance Technical Information IXGH 35N120C IXGT 35N120C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C

Contextual Info: Advance Technical Information IXGH 35N120C IXGT 35N120C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C

PLUS247TM

Contextual Info: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120C IXGX 35N120C IXGK 35N120CD1 IXGX 35N120CD1 VCES = 1200 V IC25 = 70 A VCE sat = 4.0 V tfi(typ) = 115 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

35n120

Abstract: 35N120B 35N120C IXGR35N120B
Contextual Info: VCES HiPerFASTTM IGBT ISOPLUS247TM IC25 VCE sat IXGR 35N120B 1200 V 70 A 3.3 V IXGR 35N120C 1200 V 70 A 4.0 V tfi(typ) 160 ns 115 ns (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

Contextual Info: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120C IXGX 35N120C IXGK 35N120CD1 IXGX 35N120CD1 VCES = 1200 V = 70 A IC25 VCE sat = 4.0 V tfi(typ) = 115 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

Contextual Info: Advanced Technical Information IGBT VCES = 1200 V IC25 = 70 A VCE sat = 4.0 V tfi(typ) = 115 ns IXGH 35N120C IXGT 35N120C Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200

Contextual Info: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120C IXGX 35N120C IXGK 35N120CD1 IXGX 35N120CD1 VCES = 1200 V IC25 = 70 A VCE sat = 4.0 V tfi(typ) = 115 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

Contextual Info: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120C IXGX 35N120C IXGK 35N120CD1 IXGX 35N120CD1 VCES = 1200 V IC25 = 70 A VCE sat = 4.0 V tfi(typ) = 115 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

Contextual Info: VCES HiPerFASTTM IGBT ISOPLUS247TM IC25 VCE sat IXGR 35N120B 1200 V 70 A 3.3 V IXGR 35N120C 1200 V 70 A 4.0 V tfi(typ) 160 ns 115 ns (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Contextual Info: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design

12N60c equivalent

Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
Contextual Info: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t

12n60c

Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
Contextual Info: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM