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    IXBK55N300 Search Results

    IXBK55N300 Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXBK55N300
    IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 130A 625W TO264 Original PDF 6
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    IXBK55N300 Price and Stock

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    Littelfuse Inc IXBK55N300

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    Master Electronics IXBK55N300 140
    • 1 $118.96
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    Verical IXBK55N300 140 1
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    Newark () IXBK55N300 Bulk 296 25
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    IXBK55N300 Bulk 250 1
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    RS IXBK55N300 Bulk 8 Weeks 25
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    Onlinecomponents.com IXBK55N300 140
    • 1 $118.96
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    IXYS Corporation IXBK55N300

    Trans IGBT Chip N-CH 3000V 130A 625W 3-Pin(3+Tab) TO-264
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    Verical IXBK55N300 9 1
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    Mouser Electronics IXBK55N300 558
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    TTI IXBK55N300 Tube 25
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    Future Electronics IXBK55N300 Tube 300
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    TME IXBK55N300 9 1
    • 1 $110.32
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    Maxway Technology Co Ltd IXBK55N300

    Ppv For Ixys Ixbk55N300; Available Until Stocks Are Exhausted |Maxway Technology IXBK55N300
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    Newark IXBK55N300 Bulk 1
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    IXBK55N300 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXBK55N300

    Abstract: IXBX 55N300 IXBX55N300
    Contextual Info: IXBK55N300 IXBX55N300 High Voltage, High Gain BiMOSFETTM VCES IC110 = 3000V = 55A ≤ 3.2V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    ixbk55n300ixbx55n300ic110o-264+3plus247100msixbx 55n300 PDF

    Contextual Info: High Voltage, High Gain BiMOSFETTM VCES IC110 IXBK55N300 IXBX55N300 = 3000V = 55A ≤ 3.2V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    ic110ixbk55n300ixbx55n300o-264+2100ms55n300 PDF

    IXBK55N300

    Abstract: IXBX55N300 55n30 transistor TO-264 Outline Dimensions IXBX 55N300 b55n3 PLUS247
    Contextual Info: Advance Technical Information High Voltage, High Gain BiMOSFETTM IXBK55N300 IXBX55N300 VCES IC110 VCE sat Monolithic Bipolar MOS Transistor = 3000V = 55A ≤ 3.2V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    ixbk55n300ixbx55n300ic110o-264+655n30055n30transistor to-264 outline dimensionsixbx 55n300b55n3plus247 PDF

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Contextual Info: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


    Original
    o-264ixbx55n300plus247ixbf55n300+12o-268o-247ixgf30n400ixgf4n400ixgf25n250pulserisoplusixgf54n400discrete igbtsixth1n250ixbx64n250ixgt25n250 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    p462-ndp463-ndlng295lfcp2ulng395mftp5u+11us2011schematic diagram atx power supply 500wpioneer pal 012a1000w inverter pure sine wave schematic diagram600va numeric ups circuit diagramswinbond bios 25064tle 9180 infineonsmsc mec 1300 nutbe schematic diagram inverter 2000wdk55circuit diagram of luminous 600va ups PDF

    IXBK55N300

    Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250
    Contextual Info: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking


    Original
    e153432com/ixan0022ixbk55n300ixbf55n300+8ixbh32n300bimosfetradar system with circuit diagramixbh20n300ixbh12n300bimoshigh speed bridge rectifierixbh2n250 PDF