IXBK64N250 Search Results

IXBK64N250 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXBK64N250		IXYS	BIMOSFET 2500V 75A MONO TO-247AD	Original	PDF	197.34KB

IXBK64N250 Price and Stock

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IXYS Corporation IXBK64N250 IGBT 2500V 75A TO-264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBK64N250	Tube	101		1	1 $108.29 10 $108.29 100 $90.91 1000 $90.91 10000 $90.91	Buy Now
Mouser Electronics	IXBK64N250		37			1 $108.28 10 $90.91 100 $90.91 1000 $90.91 10000 $90.91	Buy Now
Future Electronics	IXBK64N250	Tube			300	1 - 10 - 100 $72.57 1000 $71.98 10000 $71.98	Buy Now
TTI	IXBK64N250	Tube			300	1 - 10 - 100 - 1000 $70.55 10000 $70.55	Buy Now
TME	IXBK64N250				1	1 $193.69 10 $162.37 100 $156.57 1000 $156.57 10000 $156.57	Get Quote

IBS Electronics	IXBK64N250				300	1 - 10 - 100 $94.82 1000 $95.98 10000 $95.98	Buy Now
Littelfuse Inc IXBK64N250 Disc Igbt Bimsft-Veryhivolt To-264(3)/ Tube \|Littelfuse IXBK64N250
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXBK64N250	Bulk			300	1 - 10 - 100 $66.01 1000 $66.01 10000 $66.01	Buy Now
RS	IXBK64N250	Bulk		8 Weeks	25	1 - 10 - 100 $180.91 1000 $180.91 10000 $180.91	Get Quote

IXBK64N250 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXBX64N250 Abstract: IC100 IXBK64N250 PLUS247 Contextual Info: High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC110 = 2500V = 64A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXBK64N250 IXBX64N250 IC110 O-264 IC100 64N250 5-10-A IXBX64N250 IC100 IXBK64N250 PLUS247	PDF
IXBX64N250 Abstract: IXBK64N250 64N250 IXBX 64N250 PLUS247 128a Contextual Info: Preliminary Technical Information High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC25 = 2500 = 75 ≤ 3.0 VCE sat Monolithic Bipolar MOS Transistor V A V TO-264 (IXBK) Symbol Test Conditions VCES TJ = 25°C to 150°C VGES Maximum Ratings 2500	Original	IXBK64N250 IXBX64N250 O-264 IC110 PLUS247TM 64N250 IXBX64N250 IXBK64N250 64N250 IXBX 64N250 PLUS247 128a	PDF
64n250 Contextual Info: High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC110 = 2500V = 64A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXBK64N250 IXBX64N250 IC110 O-264 IC100 64N250 8-12-11B	PDF
Contextual Info: High Voltage, High Gain BiMOSFETTM VCES IC110 IXBK64N250 IXBX64N250 = 2500V = 64A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IC110 IXBK64N250 IXBX64N250 O-264 IC100 64N250 8-12-11B	PDF
IXGF30N400 Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 Contextual Info: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers	Original	O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250	PDF
IXBK55N300 Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250 Contextual Info: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking	Original	E153432) com/IXAN0022 IXBK55N300 IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250	PDF