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    IXBF Search Results

    IXBF Datasheets (20)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXBF10N300C
    		IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 29A 240W ISOPLUSI4 Original PDF 6
    IXBF12N300
    		IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 26A 125W ISOPLUSI4 Original PDF 5
    IXBF15N300C
    		IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 37A 300W ISOPLUSI4 Original PDF 6
    IXBF20N300
    		IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 34A 150W ISOPLUSI4 Original PDF 5
    IXBF20N360
    		IXYS Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 3600V 45A ISOPLUS I4PAK Original PDF 229.73KB
    IXBF32N300
    		IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 40A 160W ISOPLUSI4 Original PDF 5
    IXBF 40N140
    		IXYS TRANS IGBT CHIP N-CH 1400V 28A 3ISOPLUS I4-PAC Original PDF 97.35KB 4
    IXBF40N140
    		IXYS Discrete IGBTs Original PDF 97.35KB 4
    IXBF 40N160
    		IXYS TRANS IGBT CHIP N-CH 1600V 28A 3ISOPLUS I4-PAC Original PDF 97.35KB 4
    IXBF40N160
    		IXYS Discrete IGBTs Original PDF 97.35KB 4
    IXBF42N300
    		IXYS Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 3000V TO247 Original PDF 203.61KB
    IXBF50N360
    		IXYS Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 3600V 70A 290W I4-PAK Original PDF 209.79KB
    IXBF 9N140
    		IXYS TRANS IGBT CHIP N-CH 1400V 7A 3ISOPLUS I4-PAC Original PDF 91.77KB 4
    IXBF9N140
    		IXYS High Voltage BIMOSFET Original PDF 91.78KB 4
    IXBF 9N140 G
    		IXYS TRANS IGBT CHIP N-CH 1400V 7A 3ISOPLUS I4-PAC Original PDF 74.55KB 4
    IXBF9N140G
    		IXYS High Voltage BIMOSFET in High Voltage ISOPLUS i4-PAC Original PDF 74.56KB 4
    IXBF 9N160
    		IXYS TRANS IGBT CHIP N-CH 1600V 7A 3ISOPLUS I4-PAC Original PDF 91.77KB 4
    IXBF9N160
    		IXYS High Voltage BIMOSFET Original PDF 91.78KB 4
    IXBF 9N160 G
    		IXYS TRANS IGBT CHIP N-CH 1600V 7A 3ISOPLUS I4-PAC Original PDF 74.55KB 4
    IXBF9N160G
    		IXYS High Voltage BIMOSFET in High Voltage ISOPLUS i4-PAC Original PDF 74.56KB 4
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    IXBF Price and Stock

    IXYS Corporation

    IXYS Corporation IXBF20N360

    IGBT 3600V 45A ISOPLUS I4-PAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBF20N360 Tube 146 1
    • 1 $71.41
    • 10 $71.41
    • 100 $55.12
    • 1000 $55.12
    • 10000 $55.12
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    Mouser Electronics IXBF20N360 452
    • 1 $71.41
    • 10 $55.12
    • 100 $55.11
    • 1000 $55.11
    • 10000 $55.11
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    TTI IXBF20N360 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $53.77
    • 10000 $53.77
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    Chip Stock IXBF20N360 141
    • 1 -
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    New Advantage Corporation IXBF20N360 20 1
    • 1 -
    • 10 $174.98
    • 100 $161.52
    • 1000 $161.52
    • 10000 $161.52
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    Vyrian IXBF20N360 109
    • 1 -
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    IXYS Corporation IXBF40N160

    IGBT 1600V 28A ISOPLUS I4-PAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBF40N160 Tube 25
    • 1 -
    • 10 -
    • 100 $22.81
    • 1000 $22.81
    • 10000 $22.81
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    Mouser Electronics IXBF40N160
    • 1 $29.26
    • 10 $24.45
    • 100 $21.38
    • 1000 $21.38
    • 10000 $21.38
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    TME IXBF40N160 1
    • 1 $26.67
    • 10 $22.24
    • 100 $21.66
    • 1000 $21.66
    • 10000 $21.66
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    IXYS Corporation IXBF12N300

    IGBT 3000V 26A ISOPLUS I4-PAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBF12N300 Tube 25
    • 1 -
    • 10 -
    • 100 $24.38
    • 1000 $24.38
    • 10000 $24.38
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    Chip Stock IXBF12N300 3,117
    • 1 -
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    IXYS Corporation IXBF55N300

    IGBT 3000V 86A ISOPLUS I4-PAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBF55N300 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $90.79
    • 10000 $90.79
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    Mouser Electronics IXBF55N300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $111.11
    • 10000 $111.11
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    TTI IXBF55N300 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $88.58
    • 10000 $88.58
    		Buy Now

    IXYS Corporation IXBF42N300

    IGBT 3000V 60A ISOPLUS I4-PAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBF42N300 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $59.39
    • 10000 $59.39
    		Buy Now
    Mouser Electronics IXBF42N300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $61.70
    • 10000 $61.70
    		Get Quote
    TTI IXBF42N300 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $59.10
    • 10000 $59.10
    		Buy Now
    TME IXBF42N300 1
    • 1 $84.19
    • 10 $66.84
    • 100 $62.42
    • 1000 $62.42
    • 10000 $62.42
    		Get Quote
    New Advantage Corporation IXBF42N300 20 1
    • 1 -
    • 10 $188.55
    • 100 $174.04
    • 1000 $174.04
    • 10000 $174.04
    		Buy Now
    Find more IXBF price and stock on Findchips.com

    IXBF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXBF20N300

    Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC90 = 15A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original     		IXBF20N300 20N300 1-23-09-A IXBF20N300 PDF

    Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF15N300C VCES = 3000V IC110 = 15A VCE sat  6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		IXBF15N300C IC110 15N300C PDF

    Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC110 = 14A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBF20N300 IC110 IC110 50/60Hz, 20N300 6-05-12-B PDF

    IXBF12N300

    Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF12N300 VCES = 3000V IC110 = 11A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBF12N300 IC110 IC110 50/60Hz, 12N300 6-07-12-B IXBF12N300 PDF

    Contextual Info: IXBF 9N160 G IC25 VCES VCE sat tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 7A = 1600 V = 4.9 V = 70 ans Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions Maximum Ratings VCES VGES TVJ = 25°C to 150°C IC25 IC90 TC = 25°C TC = 90°C


    Original     		9N160 9-140/160G PDF

    Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC90 = 22A VCE sat ≤ 3.2V IXBF32N300 (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original     		IXBF32N300 32N300 PDF

    Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 11A VCE sat ≤ 3.2V IXBF12N300 (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IC110 IXBF12N300 12N300 6-07-12-B PDF

    Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF28N300 VCES = 3000V IC90 = 28A VCE sat  2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ VCGR TJ = 25°C to 150°C, RGE = 1M


    Original     		IXBF28N300 100ms 28N300 PDF

    Contextual Info: Preliminary Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat  3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		IXBF20N360 IC110 20N360 H7-B11) PDF

    9N160

    Abstract: 9N140 IXBF 9N140
    Contextual Info: Advanced Technical Information IXBF 9N140 IC25 IXBF 9N160 VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM = = = = 7A 1400/1600 V 4.9V 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C


    Original     		9N140 9N160 9N140 9N160 IXBF09 IXBF 9N140 PDF

    40N160

    Abstract: 40N140
    Contextual Info: Advanced Technical Information IXBF 40N140 IC25 IXBF 40N160 VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM = = = = 28 A 1400/1600 V 6.2 V 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C


    Original     		40N140 40N160 40N140 40N160 IXBF40 PDF

    Contextual Info: IXBF 40N160 IC25 VCES VCE sat tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 28 A = 1600 V = 6.2 V = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C


    Original     		40N160 IXBF40 PDF

    Contextual Info: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V IXBF42N300 (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C


    Original     		IC110 IXBF42N300 100ms 42N300 PDF

    Contextual Info: Advanced Technical Information IXBF 9N140 IC25 IXBF 9N160 VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM =7A = 1400/1600 V = 4.9V = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings


    Original     		9N140 9N160 9N160 PDF

    Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat  3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		IXBF20N360 IC110 20N360 H7-B11) PDF

    9N160

    Abstract: 100w 5a IGBT
    Contextual Info: Advanced Technical Information IXBF 9N140 IC25 IXBF 9N160 VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM = = = = 7A 1400/1600 V 4.9V 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C


    Original     		9N140 9N160 9N140 9N160 IXBF09 100w 5a IGBT PDF

    IXBF12N300

    Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF12N300 VCES = 3000V IC90 = 12A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original     		IXBF12N300 12N300 1-23-09-A IXBF12N300 PDF

    IXBF55N300

    Abstract: transistor 537 b 360 isoplus ixys mounting
    Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF55N300 VCES = 3000V IC110 = 28A VCE sat ≤ 3.2V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C


    Original     		IXBF55N300 IC110 55N300 0-22-09-A IXBF55N300 transistor 537 b 360 isoplus ixys mounting PDF

    Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF10N300C VCES = 3000V IC110 = 10A VCE sat  6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM mbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		IXBF10N300C IC110 10N300C PDF

    IXBF32N300

    Abstract: B32N ic901 32N300 32N30
    Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF32N300 VCES = 3000V IC90 = 22A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original     		IXBF32N300 32N300 IXBF32N300 B32N ic901 32N30 PDF

    IXBF12N300

    Abstract: ixbf12n30 ic901
    Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF12N300 VCES = 3000V IC90 = 12A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original     		IXBF12N300 12N300 IXBF12N300 ixbf12n30 ic901 PDF

    IXBF55N300

    Abstract: 55N300
    Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF55N300 VCES = 3000V IC110 = 28A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original     		IXBF55N300 IC110 55N300 0-22-09-A IXBF55N300 PDF

    Contextual Info: IXBF 9N160 G IC25 VCES VCE sat tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 7A = 1600 V = 4.9 V = 70 ans Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions Maximum Ratings VCES VGES TVJ = 25°C to 150°C IC25 IC90 TC = 25°C TC = 90°C


    Original     		9N160 9-140/160G PDF

    40N160

    Abstract: 40N140
    Contextual Info: IXBF 40N160 IC25 VCES VCE sat tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 28 A = 1600 V = 6.2 V = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C


    Original     		40N160 vol600 IXBF40 40N160 40N140 PDF