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    10N170 Search Results

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    10N170 Price and Stock

    IXYS Corporation

    IXYS Corporation IXYH10N170C

    IGBT 1700V 36A TO-247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXYH10N170C Tube 1,200 1
    • 1 $10.69
    • 10 $10.69
    • 100 $6.36
    • 1000 $5.02
    • 10000 $5.02
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    Mouser Electronics IXYH10N170C
    • 1 $10.63
    • 10 $6.37
    • 100 $6.37
    • 1000 $5.02
    • 10000 $5.02
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    Bristol Electronics IXYH10N170C 30 1
    • 1 $7.81
    • 10 $5.08
    • 100 $3.91
    • 1000 $3.91
    • 10000 $3.91
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    TTI IXYH10N170C Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $5.02
    • 10000 $5.02
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    TME IXYH10N170C 1
    • 1 $10.96
    • 10 $8.72
    • 100 $7.83
    • 1000 $7.83
    • 10000 $7.83
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    IXYS Corporation IXGH10N170

    IGBT NPT 1700V 20A TO-247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH10N170 Tube 52 1
    • 1 $15.86
    • 10 $15.86
    • 100 $9.76
    • 1000 $8.39
    • 10000 $8.39
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    Mouser Electronics IXGH10N170 378
    • 1 $15.86
    • 10 $9.54
    • 100 $9.54
    • 1000 $8.38
    • 10000 $8.38
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    TTI IXGH10N170 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $8.39
    • 10000 $8.39
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    TME IXGH10N170 1
    • 1 $8.77
    • 10 $6.97
    • 100 $6.26
    • 1000 $6.26
    • 10000 $6.26
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    IBS Electronics IXGH10N170 300
    • 1 -
    • 10 -
    • 100 $12.75
    • 1000 $12.53
    • 10000 $12.53
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    IXYS Corporation IXGT10N170

    IGBT NPT 1700V 20A TO-268AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGT10N170 Tube 10 1
    • 1 $17.50
    • 10 $17.50
    • 100 $10.86
    • 1000 $9.52
    • 10000 $9.52
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    Mouser Electronics IXGT10N170 14
    • 1 $17.50
    • 10 $10.87
    • 100 $10.87
    • 1000 $9.52
    • 10000 $9.52
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    TTI IXGT10N170 Tube 30
    • 1 -
    • 10 -
    • 100 $10.60
    • 1000 $9.52
    • 10000 $9.52
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    TME IXGT10N170 1
    • 1 $9.69
    • 10 $7.71
    • 100 $6.92
    • 1000 $6.92
    • 10000 $6.92
    		Get Quote

    IXYS Corporation IXBH10N170

    IGBT 1700V 20A TO-247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBH10N170 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.91
    • 10000 $4.91
    		Buy Now
    Mouser Electronics IXBH10N170 297
    • 1 $10.33
    • 10 $7.17
    • 100 $7.17
    • 1000 $4.91
    • 10000 $4.91
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    TTI IXBH10N170 Tube 300 30
    • 1 -
    • 10 -
    • 100 $5.61
    • 1000 $5.61
    • 10000 $5.61
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    TME IXBH10N170 25 1
    • 1 $10.95
    • 10 $10.95
    • 100 $9.43
    • 1000 $9.43
    • 10000 $9.43
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    IBS Electronics IXBH10N170 30
    • 1 -
    • 10 -
    • 100 $7.92
    • 1000 $7.80
    • 10000 $7.80
    		Buy Now

    IXYS Corporation IXBT10N170

    IGBT 1700V 20A TO-268AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBT10N170 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $10.31
    • 10000 $10.31
    		Buy Now
    Mouser Electronics IXBT10N170
    • 1 -
    • 10 -
    • 100 -
    • 1000 $13.32
    • 10000 $13.32
    		Get Quote
    TTI IXBT10N170 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $10.31
    • 10000 $10.31
    		Buy Now
    TME IXBT10N170 27 1
    • 1 $8.57
    • 10 $7.70
    • 100 $7.70
    • 1000 $7.70
    • 10000 $7.70
    		Buy Now
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    10N170 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    10N170

    Abstract: BiMOSFET
    Contextual Info: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM VCES = 1700 V IC25 = 20 A VCE sat = 3.8 V IXBH 10N170 IXBT 10N170 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		10N170 728B1 123B1 728B1 065B1 10N170 BiMOSFET PDF

    10N170

    Contextual Info: Advance Technical Data High Voltage IGBT IXGH 10N170 VCES IXGT 10N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original     		10N170 O-247 O-268 728B1 PDF

    ge motor 752

    Abstract: 10N170A 1 0 9 R
    Contextual Info: IXGH 10N170A VCES IXGT 10N170A IC25 VCE sat tfi(typ) High Voltage IGBT Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		10N170A 728B1 123B1 728B1 065B1 10N170A ge motor 752 1 0 9 R PDF

    10N170A

    Contextual Info: Advance Technical Data High Voltage IGBT IXGH 10N170A VCES IXGT 10N170A IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		10N170A 728B1 PDF

    Contextual Info: Advance Technical Data High Voltage IGBT IXGH 10N170A VCES IXGT 10N170A IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		10N170A 728B1 PDF

    10N170

    Contextual Info: High Voltage, High Gain TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 20 A VCE sat = 3.8 V IXBH 10N170 IXBT 10N170 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		10N170 10N170 O-268 O-247 728B1 123B1 065B1 PDF

    Contextual Info: IXGH 10N170A VCES IXGT 10N170A IC25 VCE sat tfi(typ) High Voltage IGBT Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		10N170A 728B1 123B1 728B1 065B1 10N170A PDF

    Contextual Info: High Voltage, High Gain TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 20 A VCE sat = 3.8 V IXBH 10N170 IXBT 10N170 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		10N170 728B1 123B1 728B1 065B1 PDF

    Contextual Info: Advance Technical Data High Voltage IGBT IXGH 10N170 VCES IXGT 10N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original     		10N170 O-247 O-268 728B1 PDF

    50N60

    Abstract: 50N100 50n80 40N160 9N160G 50N6
    Contextual Info: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C


    OCR Scan     		9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF