16N170A Search Results

16N170A Price and Stock

Filter by Manufacturer

IXYS Corporation


IXYS Corporation IXBT16N170AHV Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXBT16N170AHV		18		1	1 $13.67 10 $10.92 100 $10.21 1000 $10.21 10000 $10.21	Buy Now
IXYS Corporation IXBT16N170A Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXBT16N170A		7		1	1 $13.85 10 $10.92 100 $10.92 1000 $10.92 10000 $10.92	Buy Now
IXYS Corporation IXGH16N170A Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXGH16N170A				1	1 $11.76 10 $9.29 100 $8.34 1000 $8.34 10000 $8.34	Get Quote
IXYS Corporation IXGT16N170AH1 Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXGT16N170AH1				1	1 $25.74 10 $20.19 100 $18.31 1000 $18.31 10000 $18.31	Get Quote
Bristol Electronics	IXGT16N170AH1		30		1	1 $21.60 10 $19.87 100 $19.01 1000 $19.01 10000 $19.01	Buy Now
IXYS Corporation IXBA16N170AHV-TRL Transistor: IGBT; 1.7kV; 16A; 150W; D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXBA16N170AHV-TRL				800	1 - 10 - 100 - 1000 $23.19 10000 $23.19	Get Quote

Find more 16N170A price and stock on Findchips.com

16N170A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Advance Technical Data High Voltage IGBT IXGH 16N170A VCES IXGT 16N170A IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30	Original	16n170a 728b1	PDF
smd diode 819 Abstract: 16N170A mos 1200v to-247 Contextual Info: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20	Original	16n170a 728b1 123b1 065b1 +2smd diode 819 mos 1200v to-247	PDF
16N170A Abstract: TO-247 weight IXGH16N170A Contextual Info: Advance Technical Data High Voltage IGBT IXGH 16N170A VCES IXGT 16N170A IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30	Original	16n170a 728b1 to-247 weight ixgh16n170a	PDF
16N170AH1 Abstract: 16N170A robot control 16N170 Contextual Info: Advance Technical Data High Voltage IGBT IXGH/IXGT 16N170A VCES IXGH/IXGT 16N170AH1 IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 40 ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700	Original	16n170a 16n170ah1 o-247 405b2 +2robot control 16n170	PDF
16N170AH1 Abstract: 16N170A IXGT16N170A IXGH16N170AH1 Contextual Info: High Voltage IGBT IXGH 16N170A IXGT 16N170A IXGH 16N170AH1 IXGT 16N170AH1 VCES IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	16n170a 16n170ah1 ixgt16n170a ixgh16n170ah1	PDF
16N170A Abstract: diode 22 161 smd Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	16n170a diode 22 161 smd	PDF
Contextual Info: Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1700 V VGES Continuous	Original	16n170a o-268 o-247	PDF
A1540 Abstract: rg 710 diode 16N170A ISOPLUS247 16N170AH1 IXGR16N170AH1 Contextual Info: Advance Technical Data IXGR 16N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	16n170ah1 isoplus247 e153432 minute00 +5405b2 a1540 rg 710 diode 16n170a ixgr16n170ah1	PDF
Contextual Info: Advance Technical Data IXGR 16N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	16n170ah1 isoplus247 e153432 405b2	PDF
Contextual Info: High Voltage IGBT IXGH 16N170A IXGT 16N170A IXGH 16N170AH1 IXGT 16N170AH1 VCES IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	16n170a 16n170ah1 w1700	PDF
16N170 Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	16n170a o-268 o-247 16n170	PDF
Contextual Info: High Voltage IGBT w/ Sonic Diode 16N170A 16N170A 16N170AH1 16N170AH1 VCES IC90 VCE sat tfi(typ) = = £ = 1700V 11A 5.0V 70ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M	Original	ixgt16n170a ixgh16n170a ixgt16n170ah1 ixgh16n170ah1 +1338b2	PDF
IXGH16N170A Abstract: IXGT16N170A Contextual Info: 16N170A 16N170A 16N170AH1 16N170AH1 High Voltage IGBT w/ Sonic Diode VCES IC90 VCE sat tfi(typ) = = £ = 1700V 11A 5.0V 35ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M	Original	ixgt16n170a ixgh16n170a ixgt16n170ah1 ixgh16n170ah1 +216n170a dh10a-1800pa	PDF
50N60 Abstract: 50N100 50n80 40N160 9N160G 50N6 Contextual Info: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C	OCR Scan	9n140g 15n140 20n140 40n140 +89n160g 15n160 20n160 50n60 50n100 50n80 40n160 50n6	PDF

40N160 Abstract: 16N170 Contextual Info: BIMOSFET TM B-Series Contents VCES max. TO-247 TO-268 TO-268 long leg ISOPLUS i4-PACTM Page IXBF 9N140 C4-2 V IC25 TVJ = 25 °C A Vce(sat) TVJ = 25 °C V 1400 7 4.9 9 4.9 IXBH 9N140 C4-6 15 5.8 IXBH 15N140 C4-10 20 4.7 IXBH 20N140 C4-14 28 6.2 33 6.2 33	Original	16n170a 16n170 42n170 40n160 +29n160 15n140	PDF