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IXBX64N250 Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXBX64N250		IXYS	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 2500V	Original	PDF	192.1KB

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IXYS Corporation IXBX64N250 Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; PLUS247™
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXBX64N250				300	1 - 10 - 100 - 1000 $90.15 10000 $90.15	Get Quote
Mouser Electronics	IXBX64N250					1 - 10 - 100 - 1000 $102.82 10000 $102.82	Get Quote
TTI	IXBX64N250	Tube			300	1 - 10 - 100 - 1000 $100.96 10000 $100.96	Buy Now
Future Electronics	IXBX64N250	Tube			300	1 - 10 - 100 $107.05 1000 $107.05 10000 $107.05	Buy Now
Littelfuse Inc IXBX64N250 Disc Igbt Bimsft-Veryhivolt To-247Ad/ Tu; \|Littelfuse IXBX64N250
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXBX64N250	Bulk			300	1 - 10 - 100 - 1000 $93.05 10000 $87.24	Buy Now
RS	IXBX64N250	Bulk		8 Weeks	30	1 - 10 - 100 $133.25 1000 $133.25 10000 $133.25	Get Quote
Onlinecomponents.com	IXBX64N250					1 - 10 - 100 $207.76 1000 $70.79 10000 $70.79	Buy Now

IXBX64N250 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXBX64N250 Abstract: IC100 IXBK64N250 PLUS247 Contextual Info: High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC110 = 2500V = 64A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	ixbk64n250 ixbx64n250 ic110 o-264 +4ic100 64n250 5-10-a plus247	PDF
IXBX64N250 Abstract: IXBK64N250 64N250 IXBX 64N250 PLUS247 128a Contextual Info: Preliminary Technical Information High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC25 = 2500 = 75 ≤ 3.0 VCE sat Monolithic Bipolar MOS Transistor V A V TO-264 (IXBK) Symbol Test Conditions VCES TJ = 25°C to 150°C VGES Maximum Ratings 2500	Original	ixbk64n250 ixbx64n250 o-264 ic110 +5plus247tm 64n250 ixbx 64n250 plus247 128a	PDF
64n250 Contextual Info: High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC110 = 2500V = 64A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	ixbk64n250 ixbx64n250 ic110 o-264 +3ic100 64n250 8-12-11b	PDF
Contextual Info: High Voltage, High Gain BiMOSFETTM VCES IC110 IXBK64N250 IXBX64N250 = 2500V = 64A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	ic110 ixbk64n250 ixbx64n250 o-264 +3ic100 64n250 8-12-11b	PDF
IXGF30N400 Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 Contextual Info: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers	Original	o-264 ixbx55n300 plus247 ixbf55n300 +12o-268 o-247 ixgf30n400 ixgf4n400 ixgf25n250 pulser isoplus ixgf54n400 discrete igbts ixth1n250 ixbx64n250 ixgt25n250	PDF
IXBK55N300 Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250 Contextual Info: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking	Original	e153432 com/ixan0022 ixbk55n300 ixbf55n300 +8ixbh32n300 bimosfet radar system with circuit diagram ixbh20n300 ixbh12n300 bimos high speed bridge rectifier ixbh2n250	PDF