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20N60A4
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Fairchild Semiconductor
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600V, SMPS Series N-Channel IGBTsnull |
Original |
PDF
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236.67KB |
8 |
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20N60B
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IXYS
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Hiperfast(tm) Igbt |
Original |
PDF
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114.27KB |
4 |
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20N60B3
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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37.63KB |
1 |
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20N60B3
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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37.63KB |
1 |
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20N60B3D
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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37.63KB |
1 |
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20N60BD1
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IXYS
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Hiperfast(tm) Igbt |
Original |
PDF
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54.09KB |
2 |
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20N60C3DR
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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37.63KB |
1 |
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20N60C3R
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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37.63KB |
1 |
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20N60C3R
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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37.63KB |
1 |
20N60A
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AK Semiconductor
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20A600V N-channel enhancement mode MOSFET with 20A continuous drain current, 600V drain-source voltage, 0.33Ω typical on-resistance at 10V gate voltage, available in TO-220F, TO-247 and TO-247S packages. |
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PDF
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JMPF20N60BJ
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Jiangsu JieJie Microelectronics Co Ltd
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600V, 20A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 0.42 ohm at VGS = 10V, featuring fast switching and improved dv/dt capability in a TO-220FP-3L package. |
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PDF
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SLF20N60S
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Maplesemi
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20A, 600V N-channel MOSFET with RDS(on) of 0.19 ohm at VGS = 10V, low gate charge of 27nC, designed for high-efficiency switching applications, featuring high ruggedness, fast switching, and 100% avalanche testing. |
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PDF
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CWS20N60AC
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Wuhan Xinyuan Semiconductor Co Ltd
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600V N-Channel Super Junction MOSFET CWS20N60A with 190 mΩ RDS(on), 20A continuous drain current, fast switching capability, low gate charge, and avalanche rugged technology for high-efficiency power applications. |
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PDF
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CWS20N60AZ
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Wuhan Xinyuan Semiconductor Co Ltd
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600V N-Channel Super Junction MOSFET CWS20N60A with 190 mΩ RDS(on), 20A continuous drain current, fast switching capability, low gate charge, and avalanche rugged technology for high-efficiency power applications. |
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PDF
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JMPC20N60BJ
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Jiangsu JieJie Microelectronics Co Ltd
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600V, 20A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 0.42 ohm at VGS = 10V, featuring fast switching and improved dv/dt capability in a TO-220C-3L package. |
Original |
PDF
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CWS20N60AF
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Wuhan Xinyuan Semiconductor Co Ltd
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600V N-Channel Super Junction MOSFET CWS20N60A with 190 mΩ RDS(on), 20A continuous drain current, fast switching capability, low gate charge, and avalanche rugged technology for high-efficiency power applications. |
Original |
PDF
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