IGBT 16A Search Results

40n60 igbt

Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Contextual Info: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263

200n60

Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40

APT8GT60KR

Contextual Info: APT8GT60KR 600V Thunderbolt IGBT TO-220 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop

3b0565

Abstract: KIT_XC2785X_SK TC1167
Contextual Info: Microcontroller Board Name 6ED100HP2-FA Products Description Order No. 1ED020I12-FA Driver board for HybridPACK 2 IGBT modules, employing coreless transformer single-channel driver 1ED020I12-FA. IGBT module to be ordered seperately. SP000552868 Driver board for HybridPACK™1 IGBT modules, employing

TA8316AS

Abstract: TA8316 igbt gate drive circuits
Contextual Info: TOSHIBA TENTATIVE TA8316AS TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8316AS IGBT GATE DRIVER TA8316AS is a dedicated IC integrating IGBT gate drive circuits on a single chip. A high current directly drives IGBT. FEATURES • Can directly control from a microcontroller

SGH10N120RUF

Contextual Info: IGBT SGH10N120RUF Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general

SGP10N60RUFD

Contextual Info: IGBT SGP10N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUFD series provides low conduction and switching losses as well as short circuit ruggedness. RUFD series is designed for the applications such as motor control, UPS and general

Contextual Info: VS-GP250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Standard speed Trench PT IGBT • Fully isolated package • Very low internal inductance  5 nH typical

SGH10N60RUFD

Contextual Info: IGBT SGH10N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUFD series provides low conduction and switching losses as well as short circuit ruggedness. RUFD series is designed for the applications such as motor control, UPS and general

SGH10N120RUFD

Abstract: International Diode
Contextual Info: IGBT SGH10N120RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUFD series provides low conduction and switching losses as well as short circuit ruggedness. RUFD series is designed for the applications such as motor control, UPS and general

SGW10N60RUFD

Abstract: DC SERVO MOTOR CONTROL circuit
Contextual Info: IGBT SGW10N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUFD series provides low conduction and switching losses as well as short circuit ruggedness. RUFD series is designed for the applications such as motor control, UPS and general

igbt 300V 10A datasheet

Abstract: SGW10N60RUF
Contextual Info: IGBT SGW10N60RUF Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general

2n60p

Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
Contextual Info: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond

igbt 300V 10A datasheet

Abstract: SGP10N60RUF
Contextual Info: IGBT SGP10N60RUF Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general

GB70NA60UF

Contextual Info: GB70NA60UF Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt hyperfast rectifier • Fully isolated package

GB70NA60UF

Contextual Info: GB70NA60UF Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt hyperfast rectifier • Fully isolated package

Contextual Info: APT45GP120JDQ2 1200V TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching

GB70LA60UF

Contextual Info: GB70LA60UF Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt hyperfast rectifier • Fully isolated package

GB70LA60UF

Contextual Info: GB70LA60UF Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt hyperfast rectifier • Fully isolated package

IC270

Contextual Info: APT20GF120KR 1200V 32A Fast IGBT TO-220 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. • Low Forward Voltage Drop

IN60A

Abstract: PR30A IC270
Contextual Info: APT20GF120BRD 1200V 32A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

"SOT-227 B" dimensions

Abstract: gb70la60 GB70LA60UF
Contextual Info: GB70LA60UF Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt hyperfast rectifier • Fully isolated package

Contextual Info: APT40GP60JDQ2 600V TYPICAL PERFORMANCE CURVES APT40GP60JDQ2 E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching

Contextual Info: APT20GF120BR 1200V 32A Fast IGBT TO-247 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. • Low Forward Voltage Drop