BC169C TRANSISTORS Search Results

BC168

Abstract: transistor BC257 bc167 BC169C BC257 BC169 transistor 168b BC257 TRANSISTOR BC169C equivalent BC169B equivalent
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-92 Plastic Package BC167A, BC167B, BC168A, BC168B, BC168C, BC169B, BC169C NPN SILICON PLANAR EPITAXIAL TRANSISTORS

BC169C transistors

Abstract: BC169 BC169C BC168B BC167B BC167A BC168 BC168C BC169B BC169C equivalent
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC167A, BC167B BC168A, BC168B, BC168C BC169B, BC169C TO-92 Plastic Package AF Pre and Driver Stages as well as for Universal Application.

bc169

Abstract: BC168 BC167 BC169 TRANSISTOR BC167B
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC167A, BC167B BC168A, BC168B, BC168C BC169B, BC169C TO-92 Plastic Package AF Pre and Driver Stages as well as for Universal Application.

BC169C

Abstract: BC168 BC168A BC168C BC167 BC167A BC167B BC168B BC169 BC169B
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC167A, BC167B BC168A, BC168B, BC168C BC169B, BC169C TO-92 Plastic Package AF Pre and Driver Stages as well as for Universal Application.

Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25‘C, Unless Otherwise Specified) Maximum Ratings Type No. 'c PD (W) (A) 6Tc=25°t ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 2SD261 40 20 5 0.5 2SD468 25 20 5 0.9 2SD468B 25 20 5 2SD46BC

transistor BC170

Abstract: BC170 2SD261 2SD545E 2S0786 2SD468 2SD468B 2SD545 2SD545D 2SD545G
Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25°C, Unless Otherw se Spec fled) Maximum Ratings Type No. PD 'c CBO CES ^CB ^CE hFE lc & (mA) ^CE(SAl) ^CE ^BEISAT) 1, (MHz) Min Typ c* (pF) Typ Max !C & •(OKI Nf 9 Freq :« CDIL

BC140 equivalent

Abstract: 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent bc109 equivalent BC160 equivalent
Contextual Info: Discrete Devices Transistors Cont. European “Pro Electron” Types Type Near Equivalent Polarity Pkg. Type Near Equivalent Polarity Pkg. BC107 BC107A BC107B BC108 BC108A 2 N 2484 2N930 2N930 2 N 2484 2N930 NPN NPN NPN NPN NPN T O -18 T O -18 T O -18 T O -18

BC174

Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25"C, Unless O therw ise Specified) M axim um Ratings Type Pd (W) ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 2SD786S 50 40 5 0.25 0.3 BC167 50 45 6 0.3 0.1 No. BC167A BC167B BC16S BC168A B (1 6 8 B

2SD468C

Abstract: 2SD786R BC169C BC170 2SD545E 2SD545F BC169C transistors 2SD786 2SD261 2SD468
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Vcbo (V) Min V C E0 ^EBO (V) Min (V) Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd (W) (A) @Tc=25°t @ lc & (mA) 'cBO V CB 'c e s v ce (UA) Max § (V) (UA) Max 0 (V )

C184L

Abstract: BC184LC
Contextual Info: AL LE GR O MICROSYSTEMS INC =53 8 5 1 4 0 1 9 SPRA GU E. D • G50433Ö 0 0 0 3 5 T 3 T ■ ALGR S E M I C O N D S / ICS 93D 03593 J PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘D’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C V) (V) (V)

2SD545E

Abstract: 2SD261 2SD468 2SD468B 2SD545 2SD545D 2SD545G 2SD786 2sd786q
Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25°C, Unless Otherw se Spec fled) Maximum Ratings Type No. PD 'c CBO CES ^CB ^CE hFE lc & (mA) ^CE(SAl) ^CE ^BEISAT) 1, (MHz) Min Typ c* (pF) Typ Max !C & •(OKI Nf 9 Freq :« CDIL

Contextual Info: S P RAG UE /S EM IC ON D GROUP =13 8 5 1 40 19 SPRAGUE. ÔS13ÔSD D DOOBSTB S E M I C O N D S / ICS Q 93D 03593 J /7~ T - 3 - 1 - ¿io PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘D’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C *CBO Device

BC238B npn

Abstract: BC337-25 BC415A CBE BC238B Bc238B, NPN BC337 CBE BC307A BC414B BC337-25 CBE BC238C
Contextual Info: S P R AGUE EconolineR Plast ic-M old ed Silicon S E P T R Transistors SMALL-SIGNAL AMPLIFIERS PRO-ELECTRON SERIES >- Pd BC Ta = 25°C V(BR) V(BR) V(BR) Conditions C BO CEO E BO Ic Q. (mW) Vo lts V olts Vo lts (m A) BC182A NPN 300 60 50 6 2 5 120 BC182B NPN

BC140 equivalent

Abstract: 2N2484 equivalent transistors BC141 equivalent bcy59 equivalent bc160 equivalent 2n930 equivalent BC107 equivalent transistors 2n3019 equivalent BC177 equivalent BC107 pnp equivalent
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB

2n3019 equivalent

Abstract: 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31
Contextual Info: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE

BC140 equivalent

Abstract: BCY34 2N328A BCY31 bcy59 equivalent BC109 MOTOROLA BCY25 DH3725CN bc108c equivalent 2N3133 MOTOROLA
Contextual Info: Discrete Devices Transistors C ont. Medium Current, High-Speed Amplifiers Maximum Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF tON tOFF

EQUIVALENT TRANSISTOR bc109c

Abstract: equivalent transistor 2N1711 Transistor BC107 motorola bc109 Transistor Equivalent list EQUIVALENT TRANSISTOR bc108 Transistor BC107b motorola TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent transistor bc107b equivalent
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB

EQUIVALENT TRANSISTOR bc109c

Abstract: TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment