GUNN Search Results

TSSOP20 FOOTPRINT

Abstract: SMD Transistor DN
Contextual Info: GTL2003 8-bit bidirectional low voltage translator Rev. 2 — 3 July 2012 Product data sheet 1. General description The Gunning Transceiver Logic - Transceiver Voltage Clamps GTL-TVC provide high-speed voltage translation with low ON-state resistance and minimal propagation

AN10145

Abstract: GTL2000 GTL2010 GTL2010BS GTL2010PW HVQFN24 JESD22-A114 JESD22-A115 TSSOP24 smd transistor mark D10
Contextual Info: GTL2010 10-bit bidirectional low voltage translator Rev. 06 — 3 March 2008 Product data sheet 1. General description The Gunning Transceiver Logic - Transceiver Voltage Clamps GTL-TVC provide high-speed voltage translation with low ON-state resistance and minimal propagation

MA86728

Abstract: Gunn Diode x-band Gunn Diode diagram of gunn diode Gunn Transceiver Gunn Oscillator WR90 WR90 waveguide Gunn oscillator UG-39 WR90 flange
Contextual Info: Gunn Oscillator Transceiver 10.525 GHz MA86728 V3.00 Features ● ● ● ● ● 1.63 41.40 Low Cost High Sensitivity Integrated Assembly (Includes Mixer Diode) Can be Directly Attached to a Horn Antenna Rugged, Diecast Construction 1.65 (41.91) 0.170 DIA. HOLE 2 PLCS.

gunn diode datasheet

Abstract: gunn diodes gunn diode marconi Marconi gunn Gunn Diode marcon DC1251F DC1251G DC1251H DC1251J
Contextual Info: High Power Gunn Diodes Gallium Arsenide bulk effect devices for CW power generation in the range 4 to 40 GHz * Low cost * High reliability * Custom devices available Minimum Typical Typical operating operating Frequency output band power voltage current Outline

LI80

Abstract: AN-1065
Contextual Info: Fairchild Semiconductor öi! - a M l 0l'ä 4 ^ * 1 P A IR C H IL D GTLP: ^ ’S} GTL_ÂiNr XEROX^Wüliam GunningjHl « _2 . ^ 4 ^ l ¿ W e i ^ e | i g = o l J g J g 4 4 4 ° fl 4 4 ^ S . % % c ] £ > fr cìH Eì ^ 4 5 - i r ^-S-S. «>JL $J4. 1MHz20MHz°ÏM 4 4 4 ^ BJI #*114 4 ^ 1 4 ^ ^ -f

INTEL 845 MOTHERBOARD CIRCUIT diagram

Abstract: 2010 gtl diagrams AN10145 GTL2000 GTL2002 GTL2002D GTL2002D-T GTL2010 JESD22-A114 JESD22-A115
Contextual Info: INTEGRATED CIRCUITS DREF GREF SREF D1 D22 S1 S22 ABSTRACT Philips Semiconductors Gunning Transceiver Logic Translator Voltage Clamp GTL-TVC bi-directional low voltage translators are used in bi-directional signaling voltage level translation applications. Voltage translation can be from any voltage between 1.0 V to 5.0 V to any voltage

MA86849

Abstract: diagram of gunn diode doppler radar circuit for speed sensing Gunn Diode symbol MA86849-MO1 radar gunn diode OUTPUT POWER OF A GUNN DIODE OSCILLATOR gunn diode oscillator 10 GHz gunn diode gunn diode radar
Contextual Info: Gunn Oscillator Transceiver 24.125 GHz MA86849-MO1 V3.00 1.050 MAX. 26.67 Features ● ● ● ● ● ● ● GUNN BIAS GROUND TERMINAL Low Operating Voltage Small Physical Size Small Antennas Required Rugged, Diecast Construction Facilitates Mounting of Circuit Board

MA86859

Abstract: diagram of gunn diode Gunn oscillator OUTPUT POWER OF A GUNN DIODE OSCILLATOR Gunn Transceiver gunn diode radar gunn diode package 2222 diode radar gunn diode
Contextual Info: Gunn Oscillator Transceiver 24.125 GHz MA86859 V3.00 Features ● ● ● ● ● ● MIXER OUTPUT Low Operating Voltage Smaller Physical Size Smaller Antennas Required Rugged, Diecast Construction Good Sensitivity Directly Attachable to an Antenna GUNN BIAS

Contextual Info: MA49192-138 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power10m Frequency Min. (Hz)40G Frequency Max. (Hz)60G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage4.0 I(Oper.) Typ.(A) Oper. Current300m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

gunn diode

Contextual Info: DGB6839D Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power100m Frequency Min. (Hz)12.4G Frequency Max. (Hz)18G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage8.0 I(Oper.) Typ.(A) Oper. Current500m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

Contextual Info: ML4941 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power200m Frequency Min. (Hz)27G Frequency Max. (Hz)32G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage6.5 I(Oper.) Typ.(A) Oper. Current1.6 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

Contextual Info: DC1204E Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power30m Frequency Min. (Hz) Frequency Max. (Hz)5.0G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage15 I(Oper.) Typ.(A) Oper. Current130m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS

Contextual Info: DGB8241 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)24.5G Frequency Max. (Hz)26.5G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage5.0 I(Oper.) Typ.(A) Oper. Current220m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS

Contextual Info: DC1204C Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz) Frequency Max. (Hz)5.0G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage15 I(Oper.) Typ.(A) Oper. Current130m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS

Contextual Info: DGB8244 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)24.5G Frequency Max. (Hz)26.5G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage5.0 I(Oper.) Typ.(A) Oper. Current220m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

Contextual Info: DGB8255 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)26.5G Frequency Max. (Hz)40G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage5.0 I(Oper.) Typ.(A) Oper. Current300m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

Contextual Info: DS2113 PRELIMINARY DALLAS SEMICONDUCTOR FEATURES • Complies with Gunning Transceiver Logic GTL specifications • Provides active termination for eight signal lines • Laser-trimmed 50£1 termination resistors have 2% tolerance from 0°C to 70°C • Onboard precise 1,2V (±2%) voltage regulator

MA49156

Abstract: Gunn Diode MA49156 x-band gunn diode MA49508 Gunn Diode x band gunn diode Gunn Diode 72 GHz gunn diode x band radar gunn diodes klystron
Contextual Info: MA49000 Series Gallium Arsenide Gunn Diodes Features • HIGH RELIABILITY AND PERFORMANCE SUITABLE FOR MILITARY APPLICATIONS ■ BROADBAND ■ LOW NOISE CHARACTERISTICS FROM 5 TO 100 GHz ■ EASILY INCORPORATED INTO WAVEGUIDE, COAXIAL, MICROSTRIP OR STRIPLINE TRANSMISSION

Contextual Info: M foi Mechanically Tuned Gunn Oscillators 6 WG M Series 18-140 GHz Features • ■ ■ ■ ■ ■ ■ ■ 6-42M & 6-28M Seríes GaAs o r InP Excellent Frequency Stability High O u tp u t Power L o w AM and FM Noise Small and Lightweight Standard and Broadband Tuning

Contextual Info: GTL2002 2-bit bidirectional low voltage translator Rev. 8 — 19 August 2013 Product data sheet 1. General description The Gunning Transceiver Logic - Transceiver Voltage Clamps GTL-TVC provide high-speed voltage translation with low ON-state resistance and minimal propagation

DOPPLER 10.525 ghz

Abstract: Gunn Oscillator WR90 MA86751B GUNN OSCILLATORS
Contextual Info: an A M P com pany X-Band Gunn Oscillator MA86751 V3.00 Features • • • • • 10 to 100 mW Gunn Oscillator Series Low AM and FM Noise Mechanically Rugged for Industrial Environments Factory Tunable from 9-9 GHz to 10.6 GHz Suitable for Part 15 FCC Applications

MA86843

Abstract: Gunn Transceiver MA86843-M01 Gunn Diode at power supply circuit gunn diode package Gunn oscillator dual diode mixer motion DOPPLER k-band gunn
Contextual Info: an A M P com pany Dual Channel Gunn Oscillator Transceiver 24.125 GHz MA86843-M01 V3.00 Features Ability to Determine Direction of Motion Two IF Signals Available Low Operating Voltage Small Physical Size Small Antennas Required Rugged, Diecast Construction

DOPPLER 10.525 ghz

Abstract: Gunn Diode x-band diagram of gunn diode 10.525 ghz transceiver Gunn Oscillator WR90 gunn diode oscillator X-Band Motion Detector MA86735
Contextual Info: an A M P com pany Dual Channel Gunn Oscillator Transceiver 10.525 GHz MA86735 V3.00 Features Ability to Determine Direction of Motion Two IF Signals Available High Sensitivity Rugged Construction Directly Mountable to Antenna 8-32 UNC-2B. TO MATE WITH UG-39/U

DS2113

Abstract: SOIC300mil 16pin ic 502
Contextual Info: DS2113 PRELIMINARY DALLAS SEMICONDUCTOR FEATURES • Com plies with Gunning Transceiver Logic GTL specifications 12 QE R4 QE G ND QE 11 V re f • Package optim ized for minim um parasitic inductance and resistance 15 14 10 9 ID ID ID ID ID ID ID ID GND