2X6112B Search Results

Dsei 2x101-12A

Abstract: ixys dsei 1x31-06c ixys dsei 2x31-06c IXYS DSEI 2X121-02a ixys dsei 2x30-06c DSEI IXYS 2x31-12B 2x61-06c 2x121-02a 2x31-12B 2x31-10b
Contextual Info: FRED Contents Package style/Bauform 1b TO-252 AA 1b 1 1a 1 TO-220 AC 1 1a TO-263 AA 1a 2 TO-247 AD 2 2a TO-247 AD 2b ISOPLUS 247 TM 2a/b 2a 2a 3 SOT-227 B, miniBLOC 3 1999 IXYS All rights reserved VRRM IFAV trr V A ns 600 600 600 6 8 8 35 35 35 600 1000

IXYS DSEI 2X61-12B

Abstract: "SOT-227 B" dimensions 2x61-12B ixys dsei 2x61 2X61
Contextual Info: Fast Recovery Epitaxial Diodes FRED VRSM V 1200 VRRM DSEI 2x61 IFAVM = 2x52 A VRRM = 1200 V = 40 ns trr miniBLOC, SOT-227 B Type V 1200 DSEI 2x61-12B Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5

2x61-12B

Abstract: 2x6112b
Contextual Info: WESTCODE DSEI 2X61-12B, 1200V Page 1 of 2 WWW: http://www.westcode.com Issue 1 : 11/99 WESTCODE DSEI 2X61-12B, 1200V UK: Westcode Semiconductors Ltd P O Box 57 Chippenham Wiltshire England SN15 1JL Tel: +44 0 1249 444524 Fax: +44 (0)1249 659448 E-Mail: WSL.sales@westcode.com

DSE112-06A

Abstract: dse112 30-1OA 805A 140-12DA DSEI 30-06A DSE112-06 2X30-06C FOR DSEI 2X61-04C dsei 2x60
Contextual Info: Fast Recovery Epitaxial Diodes FRED and FRED Modules lFAV = 8 - 305 A Typa VJM DSEI8-06A • DSEI 8-05A • DSEI 8-04A ► DSEI 12-12A DSEI 12-10A lm @ -dl/dt F ^ 'F Van ‘ r, 45'C max. typ. typ. 10 ms Tvjm = 150-C TVJ=250C TVJ = 100CC A A/^a A ns •C

DSE112-12A

Abstract: DSE112-10A dse112 DSEI2X101-12A DSE1120-12A 2X31-12B DSDI60-18A DSE112-12 DSEI 120-06A DSDI60-16A
Contextual Info: Fast Recovery Epitaxial Diodes FRED lFAV= 8 - 582 A V RRM Type 1FAV @ T c TvJM= 150°C ^FRMS ^V JM ^FSM vF 10 ms 45°C A max. "^VJM @ lF lRM @ -di/dt K typ. typ. TVJ=25°C TVJ = 100°C ns A A/(is = 150°C ► New □SEI 8-06A V A °C A 600 8 115 16 100 1.3

BERULUB FR 16 B

Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
Contextual Info: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power

mosfet controlled thyristor

Abstract: mcc 55-12 a3 diode smd diode nomenclature ixys mcc 56 smd diode a3 MCC SMD DIODE H- bridge mosfet circuit smd 3 phase rectifier bridge 3 phase rectifier scr controller
Contextual Info: Product Nomenclature Diode Dice C-DWEP 69-12 Sample A3 Packing method C T W Single dice in trays, electrically tested Dice in wafers, unsawed, electrically tested, inked bad die Dice in wafers on foil, sawed, electrically tested, inked bad die Die function

DSE112-12

Abstract: DSE112-12A dse112 2x30-12b DSE119-06AS 500-06DA 250-12DA 300-06DA
Contextual Info: Fast Recovery Epitaxial Diodes FRED Ifav = 8 - 5 8 2 A Type *FSM TVjm = 150°C VJM A ► New 10 ms 45°C A Package style F max. "^VJM = typ. typ. T vj=25°C TVJ A ns 150°C A 100-C A/jis K/W 64 2.5 50 100 2.0 62 100 1.6 78 35 100 1.6 62 40 100 1.6 78 200

IXYS DSEI 2X121

Abstract: IXYS DSEI 2X121-02a 2x121-02a IXYS DSEI 2X61 DO-205 2X61-10B 110-12F dsei 2x60 110-16F 6206 sot 89
Contextual Info: DS 75 DSA 75 Rectifier Diodes Avalanche Diodes VRSM V BR min ① VRRM DSI 75 DSAI 75 VRRM = 800 - 1800 V IF(RMS) = 160 A I F(AV)M = 110 A DO-203 AB Anode Cathode on stud on stud C A V V V 900 1300 - 800 1200 DS 75-08B DS 75-12B DSI 75-08B DSI 75-12B 1300 1700

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

Dsei 2x101-12A

Abstract: 2X121-02A DSEI 2*101-12A Dsei 2x101-06P 2X161-02P
Contextual Info: 2x60 ' 2x 160 V Typ e T Vju = 150-C ► N ew RAM V A _ _ _ 1 'fav @ T1c d=0.5 A ^FRMS *FSM 10 ms °C "^VJM A 4 5 °C A vF @ IF m ax. tfr typ . TVJ * 150°C V A T1VJ=25°C ns lR H @ -d i/d t TVJ = 100°C

mm036

Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
Contextual Info: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA

Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diodes FRED V RSM V VRRM 0-4- - H — i- 0 i o - l- H -H> i—_ _ _ » Type V 1200 Symbol 1200 Ji2dt ICC 52 700 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 450 500 A A TVJ = 150°C; t = 10 ms (50 Hz), sine

IXYS DSEI 2X121-02a

Abstract: ixys dsei 2x30-12b DSEI IXYS 2x31-12B ixys dsei 1x31-06c IXYS DSEI 2 DSEI 120-06A 1x31-06c dsei 2x60 IXYS DSEI 2X61-12B DSEI IXYS 2x31
Contextual Info: IXYS _ FRED Contents K Package style/Bauform Type Page ns 1b TO-252AA 1 TO-220 AC 1a TO-263AA 35 35 35 k \ 1a 2 TO-247 AD 2a TO-247 AD 2b ISOPLUS 247 3 SOT-227 B, miniBLOC new DSEI6-06AS DSEI 8-06A DSEI 8-06AS D1-2 D1-4 D1-4 35 50 50 40