DSEI Search Results

Contextual Info: Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 640 600 DSEI 1x 31 IFAVM = 30 A VRRM = 600 V trr = 35 ns miniBLOC, SOT-227 B Type DSEI 1x 31-06C DSEI 1x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5

E72873

Abstract: 30-10B
Contextual Info: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 1000 1000 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-10B DSEI 2x 31-10B DSEI 2x30 DSEI 2x31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5

IXYS 12-10A

Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 12 VRSM A V VRRM Type C IFAVM = 12 A VRRM = 1000 V trr = 50 ns TO-220 AC C V A 1000 1000 DSEI 12-10A C A = Anode, C = Cathode Test Conditions IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM

6110B

Abstract: IXYS DSEI 2X E72873
Contextual Info: DSEI 2x 61 Fast Recovery Epitaxial Diode FRED VRRM V V 1000 1000 miniBLOC, SOT-227 B E72873 Type DSEI 2x 61-10B Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM

ixys dsei 2x61

Abstract: dsei 2x60 IXYS DSEI 2 IXYS DSEI 2X 2x61
Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 IFAVM = 2x60 A VRRM = 600 V trr = 35 ns Type DSEI 2x 61-06P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM

Epitaxial Diode FRED VRRM 1200 V 40 ns

Abstract: 2X161-12P diode 29
Contextual Info: DSEI 2x161-12P IFAVM = 2x128 A VRRM = 1200 V trr = 40 ns Fast Recovery Epitaxial Diode FRED ECO-PAC 2 Preliminary Data Sheet VRRM V V 1200 1200 A C -1 IK -10 LN -9 V X -18 Typ DSEI 2x161-12P Symbol Conditions IFRMS TVJ = TVJM 270 A IFAVM * TC = 70°C; rectangular; d = 0.5

IXYS DSEI 2x61-06C

Abstract: 2x61-06c ixys dsei 2x61 dsei 2x60
Contextual Info: Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 440 640 400 600 DSEI 2x61 IFAVM = 2x60 A VRRM = 400/600 V = 35 ns trr miniBLOC, SOT-227 B Type DSEI 2x61-04C DSEI 2x61-06C Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM

Contextual Info: Fast Recovery Epitaxial Diode FRED VRSM V 1000 VRRM DSEI 12 IFAVM = 12 A VRRM = 1000 V = 50 ns trr C A Type TO-220 AC V 1000 DSEI 12-10A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM

Contextual Info: QIXYS Fast Recovery Epitaxial Diode FRED DSEI60 IFAVM vrRRM t v RSM V rrm V h 4V\iVs Type V 1200 1200 DSEI60-12A Symbol Test Conditions ^FRMS TVJ = Maximum Ratings 100 52 800 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 500 540 A A TVJ = 150°C; t = 10 ms (50 Hz), sine

Contextual Info: □IXYS Fast Recovery Epitaxial Diode FRED DSEI 2x101 1200 V V RRM 2x99 A F(AV)M t Preliminary data 40 ns rr miniBLOC, SOT-227 B V rSM V 1200 Symbol Type V rrm V Test Conditions -N - -Ho Maximum Ratings (per diode) 140 99 TBD A A A t = 10 ms (50 Hz), sine

ixys dsei 12-10a

Abstract: 24A12 IXYS 12-10A diode 6A 1000v
Contextual Info: DSEI 12-10A Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAV = 12 A VRRM = 1000 V trr = 50 s Type A C TO-220 AC C  A DSEI 12-10A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5

Contextual Info: Id IXYS • Fast Recovery Epitaxial Diode FRED DSEI60 lFAVM = 69 A VRRM = 200 V trr = 35 ns TO-247 AD c A Sym bol T e st C o n d itio n s ^FRMS "*vj = "*"vjM T c = 85°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse width limited by T VJM 98 69 800

ixys dsei 2x61-06C

Contextual Info: Mt a b PZ b D D G i a S 3 7 1 T • I X Y D I X Y S DSEI 2x61 Fast Recovery Epitaxial Diodes lFAV = 2x60 A VRRM = 400-600 V tn < 35 ns miniBLOC, SOT-227 B V V 440 540 640 400 500 600 2 • DSEI 2x61-04C DSEI 2x61-05C DSEI 2x61-06C 1 1 o-J H Ho 3 -« 4

Contextual Info: DSEI 30-10A Fast RecoveryEpitaxial Diode FRED TO-247 AD VRSM V DSEI 30 IFAVM = 30 A 1000 VRRM = 1000 V = 35 ns Symbol trr l l l l l l International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses

dsei2x31

Contextual Info: DSEI2X31-08B Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package1 Diodes Per Circuit2 I(F) Max. (A) Forward Current30 V(RRM) (V) Rep.Pk.Rev. Voltage800 t(rr) Max.(s) Rev. Rec. Time50n @I(F) (A) (Test Condition)1

Contextual Info: DSEI2X61-06B Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package1 Diodes Per Circuit2 I(F) Max. (A) Forward Current60 V(RRM) (V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev. Rec. Time50n @I(F) (A) (Test Condition)1

Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 60 VRSM A V 600 VRRM Type C IFAVM = 60 A VRRM = 600 V = 35 ns trr TO-247 AD V 600 C DSEI 60-06A A C A = Anode, C = Cathode Test Conditions Maximum Ratings IFRMS IFAVM ¬ IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5

TFR 600

Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 60 VRSM A VRRM V V 200 200 Type C IFAVM = 69 A VRRM = 200 V trr = 35 ns TO-247 AD DSEI 60-02A C C A Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by T VJM

Contextual Info: Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 640 600 DSEI 1x 31 IFAVM = 30 A VRRM = 600 V trr = 35 ns miniBLOC, SOT-227 B Type DSEI 1x 31-06C DSEI 1x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ¬ IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5

DSEI 120-12A

Contextual Info: Fast Recovery Epitaxial Diode FRED VRSM VRRM V DSEI 120 Type C A IFAVM = 109 A VRRM = 1200 V trr = 40 ns TO-247 AD V 1200 1200 C DSEI 120-12A A C A = Anode, C = Cathode Symbol IFRMS IFAVM IFAV IFRM IFSM I2t Test Conditions ¬ Maximum Ratings TVJ = TVJM TC = 60°C; rectangular, d = 0.5

Contextual Info: DSEI 60-06A DSEI 60-06AT VRRM = 600 V IFAVM = 60 A trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 600 600 A Type C TO-247 AD A DSEI 60-06A DSEI 60-06AT C C TO-268 AA (AT Type) A A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM ①

Contextual Info: □ I X Y S Fast Recovery Epitaxial Diode FRED v* RSM V ^ rrm DSEI 30 *fa vm - 3 0 A VRRM = 1 0 0 0 V trr = 35 ns A Type C l \ TO-247 AD V 1000 1000 DSEI30-10A A Symbol Test Conditions ^FRMS I•favm ★ ^FRM Tyj Tvjm Tc = 85°C; rectangular, d = 0.5 t, < 10 us; rep. rating, pulse width limited by TVJM

FR 0169

Abstract: 2X61-06C
Contextual Info: Fast Recovery Epitaxial Diodes FRED DSEI 2x61 lFAVM = 2x60 A vRRM= 400/600 V trr vV RSM V rrm \_0 V 440 640 400 600 DSEI 2x61-04C DSEI 2x61-06C Test Conditions Maximum Ratings (per diode) V rm "*"vj = T/ jm T . = 70°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse width limited by T vjm

Contextual Info: □IXYS Fast Recovery Epitaxial Diode FRED DSEI 12 IFAVM vrRRM V 1200 Vrrm 1200 DSEI 12-12A Test C onditions ^FRMS ^FRM "^"vj — "l"vjM Tc = 100°C; rectangular, d = 0.5 tp < 10 ns; rep. rating, pulse width limited byTVJM ^FSM TVJ = 45°C; Maximum Ratings