D161 Search Results

Contextual Info: IGDD6-2-326-D1616-E1F12-DH-FA Characteristics Symbol Conditions min. typ. max. Unit 280 A 270 300 A 220 330 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES

Contextual Info: IGDD6-1-426-D1616-E1N6-DL-FA Characteristics Symbol Conditions min. typ. max. Unit 180 A 180 200 A 140 220 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES

d1610

Abstract: transistor d1610 RUR-D1610 RUR-D1615 RUR-D1620 fly wheel ta9226 RURD1615 RCA Solid State power devices
Contextual Info: G E SOLID □1 STATE 3875081 G E SOLID STATE Ullra-Fasl-R ecovery Rectifiers »F|3fl7SDai D O I T L , ^ 3 “ oTe 17649 D T 0 3 ~ /7 _ 1 RUR-D1610, RUR-D1615, RUR-D1620 File Number 1383 Dual 16-A, High-Speed, High Efficiency

RUR-D1610

Abstract: RUR-D1615 RUR-D1620 ta9226 RURD1615
Contextual Info: G E S O L 3 I D 8 7 S 5 T 8 A 1 T □ E G E S O L I D S U llra -F a s l-R e c o v e ry R e c tifie rs T A T E 1 “ » F o T | e 3 f l 7 1 7 S 6 D 4 a i D 9 O D I T L 3 , ^ T 3 ~ / _ 1 RUR-D1610, RUR-D1615, RUR-D1620 File Number

Contextual Info: IGDD6-2-326-D1616-E1F12-DH-FA Characteristics Symbol Conditions min. typ. max. Unit 280 A 270 300 A 220 330 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES

D1612

Abstract: phase controller trigger Dynacolor D16* Dynacolor
Contextual Info: D 1612 Auto Sizing Controller D l612 X 1 X2 X3 I I — Customer Package Type D : 14pin DIP Display monitor auto sizing is now possible with D1612 Auto Sizing Controller. It is a great user convenience when the customer changes timing or graphics cards D1612 senses horizontal and vortical flyback and tho vidno information, and calculates front and back porches. This informa­

Contextual Info: IGGD6-1-328-D1616-E1N6-DL-FA Characteristics Symbol Conditions min. typ. max. Unit 170 A 160 180 A 130 200 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES

Contextual Info: IGDD6-1-426-D1616-E1N6-DL-FA Characteristics Symbol Conditions min. typ. max. Unit 180 A 180 200 A 140 220 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES

b6u b6ci

Contextual Info: IGDD6-2-426-D1616-E1F12-DH-FA Characteristics Symbol Conditions min. typ. max. Unit 330 A 320 360 A 260 390 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES

SKC4M7-40A1

Contextual Info: IGDD6-2-426-D1616-E1F12-DH-FA Characteristics Symbol Conditions min. typ. max. Unit 330 A 320 360 A 260 390 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES

Contextual Info: IGDD6-1-428-D1616-E1N6-DL-FA Characteristics Symbol Conditions min. typ. max. Unit 200 A 200 220 A 160 240 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES

Contextual Info: Balun ] V ie w T y p e 6 [ D I M E N S I O N S ] U n it: m m < Top V iew > < Bottom & Side V iew > -3.2±0.2IN 4 O U T 1 /I 3 Pin No. n p v/m. wà. 1.6+ 0.2 0.68 0.46 _ r v 1 2 GND OUT2 0.25 0 .6 ± 0.05 N—►N1 0 .4 1 Part Nq EHF F D1615 EHF F D1617 EHF

23/IGDD6-2-428-D1616-E1F12-DH-FA

Contextual Info: IGDD6-2-428-D1616-E1F12-DH-FA Characteristics Symbol Conditions min. typ. max. Unit 360 A 360 390 A 290 430 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES

D1615

Contextual Info: SILICON TRANSISTORS 2 S D 1 6 1 5 ,2 S D 1 6 1 5A NPN SILICON EPITAXIAL TRANSISTORS POWER M IN I MOLD DESCRIPTION 2S D1615, 161 5A are designed fo r audio freq uency pow er a m p lifie r and sw itching app lica tion, especially in H y b rid Integrated C ircuits.

Contextual Info: IGDD6-1-326-D1616-E1N6-DL-FA Characteristics Symbol Conditions min. typ. max. Unit 150 A 150 160 A 120 180 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES

18f24k22

Abstract: PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi
Contextual Info: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412B Note the following details of the code protection feature on Microchip devices: •

c3807

Abstract: C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986
Contextual Info: sa H yo ^ Qui c = V < S ö 1ect 1on Gu 1de S P A \ v \ ÇE0 i cx v m A )\ 1 1 0 2 0 1 5 1 8 5 0 K7 1 5 K2 0 7 4 K2 3 9 5 2 5 K1 5 7 8 K212 K3 1 5 K4 0 4 K4 2 7 K444 K2270 3 0 2 0 C4 4 3 3 5 7 0 0 8 0 0 A1765 C4 4 5 4 B8 0 8 D10 12 B12 9 6 D19 3 6 3 0 K3 0 4

Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with AN1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DATA SHEET SILICON TRANSISTORS 2SC3622, 3622A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA

Contextual Info: DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose

Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1L3M on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 4.7 kΩ) • Complementary transistor with AA1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid