MCD162 Search Results

Contextual Info: MCD162-12io1 Thyristor Module VRRM = 2x 1200 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCD162-12io1 Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability

Contextual Info: MCD162-18io1 Thyristor Module VRRM = 2x 1800 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCD162-18io1 Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability

MCD162-08IO1

Contextual Info: MCD162-08io1 Thyristor Module VRRM = 2x 800 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCD162-08io1 Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability

Contextual Info: MCD162-16io1 Thyristor Module VRRM = 2x 1600 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCD162-16io1 Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability

Contextual Info: Thyristor Modules Thyristor/Diode Modules MCC 162 iTRMS = 2 x 300 A MCD162 lTAVM =2x190A VRRM =800-1800 I WWW V v RSM V t rrm VDSM v ORM V V Version 1 Version 1 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC 162-08io1 MCC 162-12io1 MCC 162-14io1 MCC 162-16io1

Contextual Info: MCD162-14io1 Thyristor Module VRRM = 2x 1400 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCD162-14io1 Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability

Contextual Info: MbfibE2 b OOQlbfil SST « I X Y DIXYS Thyristor Modules Thyristor/Diode Modules MCC162 iTAV= 2 x 181 a MCD162 vRRM= 600-1800 v Vrw Vow V vm Vow V Versioni Type Version 1 700 900 1300 1500 1700 1900 600 800 1200 1400 1600 1800* MCC162-064O1 MCC162-06ÌO1 MCC162-12k>1

Contextual Info: MCC162-08io1 Thyristor Module VRRM = 2x 800 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCC162-08io1 Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability

Contextual Info: MCC162-18io1 Thyristor Module VRRM = 2x 1800 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCC162-18io1 Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability

BFQ195

Abstract: BFG197 MCD158 MCD156
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG197; BFG197/X; BFG197/XR NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification BFG197; BFG197/X;

Contextual Info: MCC162-16io1 Thyristor Module VRRM = 2x 1600 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCC162-16io1 Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability

40n80

Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18

06io1

Abstract: MCD132-16101 MCD72-12I08B MCD72-04IO8B MCD95-04IO8B MCD95-04 MCD95-12I08B 12io1 MCD95-16I08B MCD250-08IO1
Contextual Info: Thyristor / Diode Modules 'TAV = 27-320 A Type *TFIMS *18« A 45°C 10 ms A E 72 873 M MCD26-16IOBB • MCD26-14io8B MC026-12loBB • MCD26-06io8B • MCD26-04io8B MCD44-18lo8B MCD44-16io8B • MCD44-14Ì08B MCD44-12Ì08B MCD44-08IO8B • MCD44-06ÌO8B • MCD44-04io8B

MCD40-12

Abstract: MCD40 MCD16208IO MCD95-14IO8 MCD56-16 MCD72-16 06io1 MCD224-22IO1 mcd401 M11-P
Contextual Info: Thyristor / Diode Modules ¡ h t iif i lw = 27-250 A Type v RRM Tc V rms rT TSM □ p ^"vJM 45°C 10ms th,/C per Chip V A °C A A V m °C K/W MCD26-08io8B MCD26-12io8B MCD26-14io8B MCD26-16io8B 800 1200 1400 1600 27 85 50 520 0.85 11 125 0.88 MCD40-12ÌO6

c2785

Abstract: MCD95-16IO8B MCD162 10MSA
Contextual Info: Thyristor / Diode Modules b t i i ì ib ü tf lTAV = 27-320 A Type VR *TAV *TSM 450C Tc V„ ► New MCD26-08ÌO8B MCD26-12io8B MCD26-14io8B MCD26-16Ì08B MCD44-08io8B MCD44-12io8B MCD44-14io8B MCD44-16Ì08B MCD44-18Ì08B MCD56-08ÌO8B MCD56-12Ì08B MCD56-14io8B

MCD162-08IO1

Abstract: A2785 MCD162-14IO1 10MSA
Contextual Info: Thyristor / Diode Modules •tfcih ¡tr itìi lTAV = 27-320 A Type MCD.J08 RRM ^DRM V MCD26-08io8B MCD26-12io8B MCD26-14io8B MCD26-16Ì08B MCD44-08io8B MCD44-12io8B MCD44-14io8B MCD44-16io8B MCD44-18io8B p TSM thJC 45°C 10 ms A O m iì K/W 800 49 85 80 1150

8n80

Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
Contextual Info: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1

mm036

Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
Contextual Info: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA

mcc44-16i01b

Abstract: MCD40 MCC44-14I08B MCC44-18I08B MCD310-20io1 MCD312-16I01 mcd162-16io1 MCD250-08IO1 MCD255-16IO1 MCC44-16-I01B
Contextual Info: Thyristor / Diode Modules Iw MCD.io8/.io6 = 2 7 -3 2 0 A Type *TSM New 45°C 10 ms A thJC MCD.io1 Package style thCK per Chip per Chip K/W Outlines pages 52,53,54 K/W MCD26-08ÌO8B M CD26-12io8B MCD26-14Ì08B M CD26-16io8B 800 1200 1400 1600 M CD40-12io6

BFQ195

Abstract: MCD160 mcd165 MCD158 BFG197 MSB014 MCD156 DSA00888 3002 TRANSISTOR equivalent
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG197; BFG197/X; BFG197/XR NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification BFG197; BFG197/X;

mcc162

Contextual Info: MCC162-14io1 Thyristor Module VRRM = 2x 1400 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCC162-14io1 Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability

DSE 130 -06A

Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01

IXGP70N33

Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim