2SB790 Search Results

Contextual Info: Transistors 2SB0790 2SB790 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 2.5±0.1 (1.0) (1.0) (1.5) 4.5±0.1 2.0±0.2 R 0.9 R 0.7 3.5±0.1 (1.5) 4.1±0.2 • Absolute Maximum Ratings Ta = 25°C 2.4±0.2 1.0±0.1 d p lan inc

2SB0790

Abstract: 2SB790
Contextual Info: Transistors 2SB0790 2SB790 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation

2SB0790

Abstract: 2SB790 2SD969
Contextual Info: Transistor 2SB0790 2SB790 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0969 (2SD969) Unit: mm 2.5±0.1 (Ta=25˚C) (1.0) (0.85) Parameter Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage

2SB0790

Abstract: 2SB790
Contextual Info: Transistors 2SB0790 2SB790 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 2.5±0.1 (1.0) (1.0) (1.5) (1.5) Unit Collector-base voltage (Emitter open) VCBO −25 V Collector-emitter voltage (Base open) VCEO −20 V Emitter-base voltage (Collector open)

2SB0790

Abstract: 2SB790
Contextual Info: Transistors 2SB0790 2SB790 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 2.5±0.1 (1.0) (1.0) (1.5) R 0.9 2.4±0.2 • Absolute Maximum Ratings Ta = 25°C 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 3.5±0.1 (1.5) 1.0±0.1 • Low collector-emitter saturation voltage VCE(sat)

4102 transistor

Abstract: 2SB790 2SD969 2SD96
Contextual Info: Transistor 2SB790 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD969 Unit: mm 6.9±0.1 1.0 0.85 Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage VCEO –20 V Emitter to base voltage

Contextual Info: Transistors 2SB0790 2SB790 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD0969 (2SD969) Unit: mm 2.5±0.1 (Ta=25˚C) (1.0) (0.85) Parameter Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage

2SD969

Abstract: 2SB790
Contextual Info: 2SD969 2SD969 '> ij u > NPN =£•'> 7 [/~?\s—-J-ifcXSi NPN Epitaxial Planar AF Output Amplifier U > V £ >J/Complementary Pair with 2SB790 2SB790 t ^ 6.9 ± 0.1 ■ 4$ ^ /F e a tu r e s • 3 V ^ • . X ; 7 V c E s a t) 9W ±M <n ? £ h FE V c E (s a t)

2SB0790

Abstract: 2SB790 2SD969
Contextual Info: Transistor 2SB0790 2SB790 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0969 (2SD969) Unit: mm 6.9±0.1 1.0 0.85 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

2SD889

Abstract: 2SB772 KT 185 2SB754 2SB793 2SB751A 2sb764 2sb774 2SB753 2SB757
Contextual Info: - 60 - m n. Ta=25íC, *EP(3Tc=25‘ C SS £ m S ii V’ CBO V’ ceo (V) (V) Ici DC) (A) 2SB751A PA/SW -80 -80 -4 2SB753 PSW/PA -100 -80 -7 2SB754 PSW/PA -50 -50 -7 2SB757 HS PSW/PA/Audio/Reg -40 -40 LF PA -60 LF PA LF PA LF PA 2SB761 2SB76ÎA 2SB762 2SB762A

2SD921

Abstract: 2SD920 T03B 2SD983 2SB793 2SD933H 2SD947 2SD917 2SD922 2SD923
Contextual Info: - 230 - 13=25*0. *EP(äTc=25'1C m ?± ^ m £ VcBO Vc e o (V) (V) IC ( D C ) föT T V Hout 330 200 7 2SD920 % ± im Reg/PA 200 180 5 Reg/PA 200 180 Reg/PA 150 100 Reg/PA 150 100 Reg/PA 200 HV S W / O ' t O 2SD922 2SD923 % ± im %±Gm -M ± m m 2SD929 2SD933H

2SA1115

Abstract: 2sa1015 2SB1340 2SA1432 2SA1015L 2SB1342 2SB1370 A1592 2sa112 2SB753
Contextual Info: - m £ tt « Type No. Man uf. 2SB 1249 = 2 SB 1250 2 SB 1251 2SB 1252 fé T K T s fâ T fô T 2 SB 1253 2SB 1257 2SB 1258 - if'y'ry ÿ-yjy 2SB 1259, 2SB 1260 2SB 1261 = £ SANYO 2SA15 9 2 2SB1226 2SB1227 2SB1227 2SB1228 2SBÌ223 2SB1228 a 3C T0SHÍBA 2SA1225

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SA1286H

Abstract: 30j125 2SA1282AE BC159A PB6013 bc159 LOW-POWER SILICON PNP 2SA1286J 2SA1282AF mps404
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 BC586 BC586 BCF29 BCF29 BCF29R BCF29R BC179A 2SA643 2SA723 2SA723 ~~~~~;j 15 20 25 30 35 40 BC253 BC263 BC159 BC159A BC159A BC419 NA22FH BC200-02 j~~g~~~ MT0412 MMT71 BC309VI BC200G BC259A BC259B BC259 NA12FI

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

2SD945

Abstract: 2SD988 2SD924 2SD977 2SD972 2SD984 2SD988 equivalent 2SD925 2SD996 2SD902
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 25W 2SD901 200 5 2A 150 100 10 400 (Tc=25ºC) 80W 2SD902 350

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2SB1446

Abstract: 2SD2458 2sc5335 2SD1010 2SD1993 2SD1995 2SB642 2SD119 2SD2456 2SC2632
Contextual Info: •Silicon Small Signal Transistors # General-use Low Frequency Amplifiers and Others Package No. SS-Mini Type (D1 ) S-Mini Type (D5) I 2SB1462 ' 2SB1218A . 2SD2216 2SD1819A : 2SB1219/A i 2SD1820/A i 2SA1791 i 2SC4656 Mini Type (D12) New S Type (034) ! 2SB709A

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030