24N50
Abstract: IXGH24N50BU1 IXGH24N60BU1
Contextual Info: DIXYS HiPerFAST IGBT with Diode Symbol V,CES IXGH 24N50BU1 IXGH 24N60BU1 24N50 600 V V Continuous ±20 V VGEM T ransient ±30 V C25 Tc = 25°C 48 A ^C90 T c = 90°C 24 A ®CM T c = 25°C, 1 ms 96 A SSOA RBSOA VGE = 15 V, TVJ = 125°C, Rg = 22 Q Clamped inductive load, L = 100,uH
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24n50bu124n60bu124n5024n60+3-247aixgh24n50bu1ixgh24n60bu1
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24N50B
Abstract: IXGH24N50B IXGH24N50BU1 IXGH24N60B IXGH24N60BU1
Contextual Info: DIXYS V,CES HiPerFAST IGBT IXGH 24N50B IXGH 24N60B Symbol Maximum Ratine Test Conditions 24N50 Tj =25°C to150°C 500 600 V V CGR Tj = 25°C to 150°C; RG6 = 1 M il 500 600 V v Continuous ±20 V VGEM Transient 30 V C25 Tc = 25°C 48 A Tc = 90°C 24 A
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24n50b24n60b24n5024n60+7o-247adto150jedecto-247ixgh24n50bixgh24n50bu1ixgh24n60bixgh24n60bu1
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2QN60
Abstract: ixgh 1500
Contextual Info: IGBT with Diode /G ^ S p e e , S = Suffix c G series high gain, high speed V Type t jm = 150° c >- New { IXGA 12N100U1 IXGP 12N100U1 IXGH 12N100U1 I j £ 1 S. Î I* IXGH > IXGH IXGH IXGH IXGH 17N100U1 40N30BD1 22N50BU1 24N50BU1 32N50BU1 V IXGH IXGH IXGH
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t0-220ab12n100u117n100u140n30bd1+622n50bu124n50bu132n50bu12qn60bu12qn60ixgh 1500
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24N60
Abstract: IXGH24N50B IXGH24N60B
Contextual Info: HiPerFASTTM IGBT 24N50B IXGH24N60B VCES IC 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings 24N50 24N60 TO-247 AD VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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ixgh24n50bixgh24n60b24n5024n60+1o-247
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c2548
Abstract: IXGH24N50BU1 IXGH24N60BU1
Contextual Info: HiPerFASTTM IGBT with Diode 24N50BU1 IXGH24N60BU1 Combi Pack VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25°C to 150°C 500 VCGR TJ = 25°C to 150°C; RGE = 1 MW
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ixgh24n50bu1ixgh24n60bu124n5024n60+3o-247tempera10c2548
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W2515
Abstract: IXGH24N50BU1 IXGH24N60BU1
Contextual Info: HiPerFASTTM IGBT with Diode 24N50BU1 IXGH24N60BU1 Combi Pack VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25°C to 150°C 500 VCGR TJ = 25°C to 150°C; RGE = 1 MW
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ixgh24n50bu1ixgh24n60bu124n5024n60+3o-247tempera000w2515
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6G E 2080 diode
Abstract: IXGH24N50BU1 IXGH24N60BU1 24n60
Contextual Info: v CES HiPerFAST IGBT with Diode Symbol 24N50BU1/S IXGH24N60BU1/S Maximum Ratings Test Conditions 24N50 Tj = 25“C to 150°C 500 600 V vCGfl vGES vGEM Tj = 25°C to 150°C; RaE = 1 MQ 500 600 V Continuous ±20 V Transient ±30 V ^C25 *C90 ^CM T c = 25°C
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ixgh24n50bu1/sixgh24n60bu1/s24n5024n60+8o-24724ns0bu1ixgh24w6su124n50bu124n60bu16g e 2080 diodeixgh24n50bu1ixgh24n60bu1
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7N60B
Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
Contextual Info: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28
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30n3028n304qn3031n60+1238n6041n6060n60200n6025n100a7n60b65a340n60aixga 12n60cixgh 1500ixg igbtixgh
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SMD diode b24
Abstract: diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode
Contextual Info: QIXYS HtPerFAST _ fG&T G-Series ^ Contents A \ v CES V TO-220 IXGP TO-247 ^ TO-263 (IXGA) TO-247 SMD/.S* T0-204 miniBLOC Page 300 60 60 1.6 1.8 IXGH 30N30/.S IXGH 40N30/.S B2-4 B2-6 600 40 76 75® 75 1.8 1.8 2.5 1.8 IXGH IXGH IXGH IXGH B2-64
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12n100o-220o-263o-247+14t0-20430n30/40n30/31n60smd diode b24diode b26smd diode b2820n60bu1smd diode b2360n60 igbt smdb29212n60csmd diode b2b26 diode
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ixgh 1500
Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
Contextual Info: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•
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10n6020n6031n6030n60+1338n6040n6060n6032n60bs40n60aixgh 150025n120200n6060n60 igbt smd10n60a30n60a25n10020n60a
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GEM X 365
Abstract: IXGH24N60B 24N60 IXGH24N50B zr smd
Contextual Info: Prelim inary data HiPerFAST IGBT 24N50B IXGH24N60B V CES ^C 25 VCE(sat) 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns TO-247 SMD (24N*BS) Znr Symbol Test Conditions Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C 500 600 V Vcon Tj = 25°C to 150°C; RGE = 1 MQ
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ixgh24n50bixgh24n60bo-24724n50+324n60gem x 365zr smd
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.24n50
Abstract: xgh2 IXGH24N50BU1 IXGH24N60BU1
Contextual Info: Preliminary data HiPerFAST IGBT with Diode 24N50BU1 IXGH24N60BU1 V CES *C 25 VCE(sat) t. 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack T0-247 SMD (24N*BU1 S) Symbol TestConditions I C (TAB) Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C
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ixgh24n50bu1ixgh24n60bu1t0-24724n50+224n60xgh2
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120n60b
Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
Contextual Info: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *
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o-220o-263o-24728n30+1630n3040n302n1008n1006n10012n10q120n60b40n30bd132n507n60c20n60bu140n60ab-2160200n6012n60cixgh24n50b
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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plus24720n3028n3030n30+1540n3031n6038n6041n6060n60o-264200n60n60c50n607n60bic igbt 25n120ic60080n6060n60 igbt25n120
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24N50
Abstract: IXGH24N50B IXGH24N60B
Contextual Info: HiPerFAST IGBT V CES 24N50B/S IXGH24N60B/S Maximum Ratings Symbol Test Conditions Vces Tj = 25°C to 150°C 500 600 V v CGfl Tj = 25°C to 150°C; Rge = 1 M fi 500 600 V v GES C ontinuous ±20 V v GEM T ransient ±30 V 'c25 T c = 25°C 48 A 'c90 T c = 90°C
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ixgh24n50b/sixgh24n60b/s24n5024n60+3o-247ixgh24n50bixgh24n60b
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IXGH24N60BU1
Abstract: 24N50 HIPERFAST IGBT WITH DIODE 24N60 IXGH24N50BU1
Contextual Info: DIXYS Prelim inary data HiPerFAST IGBT with Diode 24N50BU1 IXGH24N60BU1 V CES ^C 25 V CE(sat) t,i 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack TO-247 SMD (24N*BU1S) U Symbol Test Conditions 24N50 24N60 V CES ^ = 25 °C to 150°C 500 600
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ixgh24n50bu1ixgh24n60bu124n5024n60+1hiperfast igbt with diode
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24N60
Abstract: IXGH24N50B IXGH24N60B ixgh24N60
Contextual Info: Preliminary data HiPerFAST IGBT 24N50B IXGH24N60B VoES 'c 25| V CE(sat t« 500 V 48 A 2.3 V 80 ns 600 V 48 A 2.5 V 80 ns T0-247 SMD (24N*BS) f C (TAB) < Symbol Test C onditions > Maximum Ratings v CES Td = 25°C to 150°C VC3R T.J = 25°C to 150°C; RbE = 1
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ixgh24n50bixgh24n60bt0-24724n50+324n60o-247ixgh24n60
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24N60
Abstract: IXGH24N60BU1
Contextual Info: □IXYS HiPerFAST IGBT w i t h Diode Combi Pack ix g h 2 4 n sobui IXGH24N60BU1 v CES ^C 25 V* CE(sat) 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns P re lim in a ry d a ta Symbol Test Conditions Maximum Ratings 24N50 24N60 G = Gate, C = Collector, E = Emitter,
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ixgh24n60bu124n5024n60o-247 |
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8n80
Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
Contextual Info: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1
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cs1011-18io1cs1011-22io1cs1011-25io1+16cs1250-12io1cs1250-14io1cs1250-16io1cs20-12cs20-14cs20-168n80ds117-12a36-18n16go20n60a2qn6062-16n07dsa117-1210n60amcc95-12io1b
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12n60c
Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
Contextual Info: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM
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o-220o-263o-247plus247+15o-268isoplus247tmo-26420n3028n3030n3012n60c60n60 igbtdiode b24231n60ixgk50n60bu150n60bd1diode 12 b2120n6060n60
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24N60
Abstract: IXGH24N60B 24N5 IXGH24N50B 24N50
Contextual Info: HiPerFASTTM IGBT 24N50B IXGH24N60B VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings 24N50 24N60 TO-247 AD VCES T J = 25°C to 150°C 500 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW
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ixgh24n50bixgh24n60b24n50o-247+324n60frequenc1524n5
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12n60u
Abstract: sta 750 tic 263a
Contextual Info: , IGBT with Diode Combi Pack G series with high gain type VCES .Tjm= 1:S0oO ► New : >• >>>> ► ► ► ► ► IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH
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12n60usta 750tic 263a |
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e5200
Abstract: IXGH24N50B IXGH24N60B
Contextual Info: OIXYS V CES ^C 25 V CE(sat) 500 V 48 A 2.3 V 80 ns 600 V 48 A 2.5 V 80 ns HiPerFAST IGBT 24N50B IXGH24N60B Preliminary data Symbol TO-247 AD Test Conditions Maximum Ratings 24N50 24N60 V CES T j = 25°C to 150°C 500 600 V V CGR T,J = 25°C to 150°C; F be
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ixgh24n50bixgh24n60bo-24724n50+224n60e5200
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DSE 130 -06A
Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01
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axc-051axc-051-raxc-102axv-002+16015-14to12x45-16io12x60-08io12x60-12io12x60-14io12x60-16io1dse 130 -06avub 70-12ixgh 30n120vub 70-1630n60b80n1012n60cddsei 30-16 asdsep 15-06a13n50
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