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Contextual Info: CS48L10 32-Bit Audio DSP Product CRD48L10-4in4out Board Manual Copyright  Cirrus Logic, Inc. 2012 All Rights Reserved http://www.cirrus.com NOV 2012 DS998DB1 CS48L10 Contacting Cirrus Logic Support For all product questions and inquiries, contact a Cirrus Logic Sales Representative.

IXGR50N160H1

Contextual Info: Advance Technical Information High Voltage IGBT with Diode IXGR50N160H1 VCES = 1600V IC110 = 36A VCE sat ≤ 2.30V ( Electrically Isolated Tab) ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXBX64N250

Abstract: IC100 IXBK64N250 PLUS247
Contextual Info: High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC110 = 2500V = 64A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXTN17N120L

Contextual Info: Advance Technical Information Linear Power MOSFET With Extended FBSOA IXTN17N120L VDSS ID25 D N-Channel Enhancement Mode Avalanche Rated = 1200V = 17A Ω ≤ 990mΩ RDS on G S S miniBLOC, SOT-227 B (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR32N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR30N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: Polar VHVTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on = 1000V = 0.8A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFL44N100P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 22A Ω 240mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000

Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTA08N100P IXTP08N100P IXTY08N100P = 1000V = 0.8A Ω ≤ 20Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000

IXTN8N150L

Contextual Info: Preliminary Technical Information Linear Power MOSFET w/Extended FBSOA VDSS ID25 IXTN8N150L D N-Channel Enhancement Mode Guaranteed FBSOA = 1500V = 7.5A Ω = 3.6Ω RDS on G S S miniBLOC, SOT-227 B E153432 S Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: Preliminary Technical Information IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = 150V 90A Ω 20mΩ RDS on ≤ TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C

Contextual Info: High Voltage IGBT VCES = 2500V IC25 = 30A VCE sat ≤ 2.9V IXGF25N250 For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V

IXTN17N120L

Contextual Info: LinearTM Power MOSFET w/ Extended FBSOA IXTN17N120L VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA = 1200V = 15A Ω < 900mΩ G S S miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V

IXGH100N30C3

Abstract: 100N30 100N30C3
Contextual Info: Preliminary Technical Information GenX3TM 300V IGBT IXGH100N30C3 VCES IC110 VCE sat tfi typ High Speed PT IGBTs for 50-150kHz switching Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous

IXFB40N110P

Abstract: IXFB 40N110P 40n110p F40N
Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFB40N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1100V 40A Ω 260mΩ 300ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ

IXFN44N100P

Abstract: 44N100P 40108
Contextual Info: IXFN44N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTH96N25T

Abstract: IXTQ96N25T 96N25T 96N2
Contextual Info: Preliminary Technical Information TrenchHVTM Power MOSFET IXTH96N25T IXTQ96N25T IXTV96N25T VDSS ID25 = 250V = 96A Ω ≤ 29mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

IXTA90N15T

Abstract: IXTP90N15T 90N15T IXTH90N15T
Contextual Info: Preliminary Technical Information Trench Gate Power MOSFET VDSS ID25 IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T N-Channel Enhancement Mode Avalanche Rated = = 150V 90A Ω 20mΩ RDS on ≤ TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C

IXGP90N33TBM-A

Abstract: IXGP90N33 90n33 IXGP90N
Contextual Info: IXGP90N33TBM-A Trench gate IGBT For PDP Applications VCES = 330V = 360A ICP VCE sat ≤ 1.60V OVERMOLDED TO-220 W/ FORMED LEAD (IXGP.M-A) Symbol Test Conditions VCES TJ = 25°C to 150°C 330 V VGEM Transient ±30 V IC25 TC = 25°C ICP TJ ≤ 150°C, tp ≤ 1 s

IXTH160N15T

Abstract: 160n15t
Contextual Info: Preliminary Technical Information TrenchHVTM Power MOSFET IXTH160N15T VDSS ID25 RDS on = 150 V = 160 A Ω ≤ 9.6 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1MΩ

IXBX64N250

Abstract: IXBK64N250 64N250 IXBX 64N250 PLUS247 128a
Contextual Info: Preliminary Technical Information High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC25 = 2500 = 75 ≤ 3.0 VCE sat Monolithic Bipolar MOS Transistor V A V TO-264 (IXBK) Symbol Test Conditions VCES TJ = 25°C to 150°C VGES Maximum Ratings 2500

26N120P

Abstract: 26n120 IXFN26N120P
Contextual Info: IXFN26N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 460mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

2R4N120P

Abstract: IXTA2R4N120P IXTH2R4N120P
Contextual Info: Polar TM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A ≤ 7.5Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200

IXFX30N110P

Abstract: PLUS247 ixfk 30N110P
Contextual Info: IXFK30N110P IXFX30N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = 1100V 30A Ω 360mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C