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    IXTP2R4N120P Search Results

    IXTP2R4N120P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTP2R4N120P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 2.4A TO-220 Original PDF 4
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    IXTP2R4N120P Price and Stock

    IXYS Corporation

    IXYS Corporation IXTP2R4N120P

    MOSFETs 2.4 Amps 1200V 7.5 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTP2R4N120P 169
    • 1 $8.02
    • 10 $5.12
    • 100 $4.60
    • 1000 $3.35
    • 10000 $3.35
    Buy Now
    Verical IXTP2R4N120P 307 9
    • 1 -
    • 10 $6.55
    • 100 $4.78
    • 1000 $4.66
    • 10000 $4.66
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    TTI IXTP2R4N120P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.35
    • 10000 $3.35
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    IXTP2R4N120P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2R4N120P

    Abstract: IXTA2R4N120P IXTH2R4N120P
    Contextual Info: Polar TM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A ≤ 7.5Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200


    Original
    IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P O-263 O-220 2R4N120P 2-08-A IXTA2R4N120P IXTH2R4N120P PDF

    Contextual Info: Polar TM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A Ω ≤ 7.5Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200


    Original
    IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P O-263 O-220 2R4N120P 2-08-A PDF

    Contextual Info: Polar VHVTM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A ≤ Ω 7.5Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P O-263 2R4N120P PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original
    PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original
    D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 PDF