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    IXTP2R4N120P Search Results

    IXTP2R4N120P Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTP2R4N120P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 2.4A TO-220 Original PDF 4
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    IXTP2R4N120P Price and Stock

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    IXYS Corporation IXTP2R4N120P

    Trans MOSFET N-CH 1.2KV 2.4A 3-Pin(3+Tab) TO-220
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    Verical IXTP2R4N120P 304 7
    • 1 -
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    • 100 $5.62
    • 1000 $5.41
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    TTI IXTP2R4N120P Tube 300
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    TME IXTP2R4N120P 304 1
    • 1 $8.51
    • 10 $5.32
    • 100 $4.41
    • 1000 $3.83
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    Littelfuse Inc IXTP2R4N120P

    Disc Mosfet N-Ch Std-Polar To-220Ab/Fp/; |Littelfuse IXTP2R4N120P
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    Newark () IXTP2R4N120P Bulk 300
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    IXTP2R4N120P Bulk 1
    • 1 $6.65
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    RS IXTP2R4N120P Bulk 8 Weeks 50
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    Onlinecomponents.com IXTP2R4N120P
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    IXTP2R4N120P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2R4N120P

    Abstract: IXTA2R4N120P IXTH2R4N120P
    Contextual Info: Polar TM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A ≤ 7.5Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200


    Original     		ixta2r4n120pixth2r4n120pixtp2r4n120po-263+3o-2202r4n120p2-08-a PDF

    Contextual Info: Polar TM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A Ω ≤ 7.5Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200


    Original     		ixta2r4n120pixth2r4n120pixtp2r4n120po-263+3o-2202r4n120p2-08-a PDF

    Contextual Info: Polar VHVTM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A ≤ Ω 7.5Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		ixta2r4n120pixth2r4n120pixtp2r4n120po-263+12r4n120p PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		ixtd08n100p-1aixtq22n60pixfh20n80pdws20-200a+6ixfh24n80pixfk180n15pixtq22n50pdwhp16-12ixgh64n60a3ixfb50n80q2 PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		d-68623ixbod1-08ixbod1-09ixbod1-10+12dsep30-06brdsep30-12crixgp70n33ixgq90n33sk0604ixtp76n075ixer35n120d1ixgp70n33tbm-adh60-18avbo19sk0712ixth1n250 PDF