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    IXTA2R4N120P Search Results

    IXTA2R4N120P Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTA2R4N120P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 2.4A TO-263 Original PDF 4
    SF Impression Pixel

    IXTA2R4N120P Price and Stock

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    Littelfuse Inc IXTA2R4N120P

    Mosfet, N-Ch, 1.2Kv, 2.4A, To-263; Channel Type:N Channel; Drain Source Voltage Vds:1.2Kv; Continuous Drain Current Id:2.4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes
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    Newark IXTA2R4N120P Bulk 18 1
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    RS IXTA2R4N120P Bulk 8 Weeks 50
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    Onlinecomponents.com IXTA2R4N120P
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    Flip Electronics IXTA2R4N120P 300
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    Littelfuse Inc IXTA2R4N120P-TRL

    Ixta2R4N120P Trl/ T&r; |Littelfuse IXTA2R4N120P-TRL
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    Newark IXTA2R4N120P-TRL Tape & Reel 800
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    Onlinecomponents.com IXTA2R4N120P-TRL
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    IXYS Corporation IXTA2R4N120P

    MOSFETs 2.4 Amps 1200V 7.5 Rds
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    TTI IXTA2R4N120P Tube 300
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    Future Electronics IXTA2R4N120P Tube 19 Weeks 300
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    TME IXTA2R4N120P 300
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    IXYS Corporation IXTA2R4N120P-TRL

    Transistor: N-MOSFET; 1.2kV; 2.4A; 125W; D2PAK,TO263; 920ns
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    TME IXTA2R4N120P-TRL 800
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    IXTA2R4N120P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2R4N120P

    Abstract: IXTA2R4N120P IXTH2R4N120P
    Contextual Info: Polar TM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A ≤ 7.5Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200


    Original     		ixta2r4n120pixth2r4n120pixtp2r4n120po-263+3o-2202r4n120p2-08-a PDF

    Contextual Info: Polar TM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A Ω ≤ 7.5Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200


    Original     		ixta2r4n120pixth2r4n120pixtp2r4n120po-263+3o-2202r4n120p2-08-a PDF

    Contextual Info: Polar VHVTM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A ≤ Ω 7.5Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		ixta2r4n120pixth2r4n120pixtp2r4n120po-263+12r4n120p PDF