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IXFB40N110P Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFB40N110P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1100V 40A PLUS264	Original	PDF		4

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IXYS Corporation IXFB40N110P MOSFETs 40 Amps 1100V 0.2600 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFB40N110P					1 - 10 - 100 - 1000 $46.16 10000 $46.16	Get Quote
TTI	IXFB40N110P	Tube			300	1 - 10 - 100 - 1000 $39.81 10000 $39.81	Buy Now
TME	IXFB40N110P				300	1 - 10 - 100 - 1000 $37.80 10000 $37.80	Get Quote
Littelfuse Inc IXFB40N110P Mosfet, N-Ch, 1.1Kv, 40A, Plus264; \|Littelfuse IXFB40N110P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark ()	IXFB40N110P	Bulk			1	1 $68.63 10 $68.63 100 $68.63 1000 $68.63 10000 $68.63	Buy Now
	IXFB40N110P	Bulk			300	1 - 10 - 100 - 1000 $37.45 10000 $35.39	Buy Now
RS	IXFB40N110P	Bulk		8 Weeks	25	1 - 10 - 100 $66.08 1000 $66.08 10000 $66.08	Get Quote
Onlinecomponents.com	IXFB40N110P					1 - 10 - 100 $99.70 1000 $35.46 10000 $35.46	Buy Now

IXFB40N110P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXFB40N110P Abstract: IXFB 40N110P 40n110p F40N Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFB40N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1100V 40A Ω 260mΩ 300ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixfb40n110p 300ns plus264tm 40n110p +33-28-08-a ixfb 40n110p f40n	PDF
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB40N110P VDSS = 1100V ID25 = 40A Ω RDS on ≤ 260mΩ ≤ 300ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings	Original	ixfb40n110p 300ns plus264tm 40n110p	PDF
Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFB40N110P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1100V 40A Ω 260mΩ 300ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixfb40n110p 300ns plus264tm 40n110p +13-28-08-a	PDF
Contextual Info: Preliminary Technical Information PolarVHVTM HiPerFET Power MOSFET IXFB40N110P VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGSS PLUS264TM (IXFB)	Original	ixfb40n110p 300ns plus264tm 338b2	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200v ixfb30n120p ixfl30n120p ixfn30n120p +14ixfl32n120p ixfn32n120p plus220 ixfv110n10ps 1200 volt mosfet 1000 volt mosfet mosfet 300 volt hiperfet ixfn38n100 sot 227b diode fast transistor polar 2r4n120p ixfn44n100p ixfb44n100p	PDF