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IXFN26N120P Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFN26N120P		IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1200V 23A SOT-227B	Original	PDF		4

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IXYS Corporation IXFN26N120P Trans MOSFET N-CH 1.2KV 23A 4-Pin SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IXFN26N120P		7		2	1 - 10 $52.86 100 $52.86 1000 $52.86 10000 $52.86	Buy Now
TME	IXFN26N120P		7		1	1 $41.90 10 $33.24 100 $33.24 1000 $33.24 10000 $33.24	Buy Now
Littelfuse Inc IXFN26N120P Discmsft N-Ch Hiperfet-Polasot-227B(Mini; \|Littelfuse IXFN26N120P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark ()	IXFN26N120P	Bulk			300	1 - 10 - 100 - 1000 $56.06 10000 $52.56	Buy Now
	IXFN26N120P	Bulk			1	1 $91.44 10 $91.44 100 $91.44 1000 $91.44 10000 $91.44	Buy Now
RS	IXFN26N120P	Bulk		8 Weeks	10	1 - 10 $80.29 100 $80.29 1000 $80.29 10000 $80.29	Get Quote
Onlinecomponents.com	IXFN26N120P					1 - 10 - 100 $125.18 1000 $42.65 10000 $42.65	Buy Now

IXFN26N120P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
26N120P Abstract: 26n120 IXFN26N120P Contextual Info: IXFN26N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 460mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	ixfn26n120p 300ns ot-227 e153432 +326n120p 3-28-08-b 26n120	PDF
Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFN26N120P = = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 500mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	ixfn26n120p 300ns e153432 26n120p +110-24-11-c	PDF
Contextual Info: IXFN26N120P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 500mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	ixfn26n120p e153432 300ns 26n120p +110-24-11-c	PDF
Contextual Info: Preliminary Technical Information IXFN26N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 460mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions	Original	ixfn26n120p 300ns ot-227 e153432 +226n120p 1-07-a	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	ixtd08n100p-1a ixtq22n60p ixfh20n80p dws20-200a +6ixfh24n80p ixfk180n15p ixtq22n50p dwhp16-12 ixgh64n60a3 ixfb50n80q2	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200v ixfb30n120p ixfl30n120p ixfn30n120p +14ixfl32n120p ixfn32n120p plus220 ixfv110n10ps 1200 volt mosfet 1000 volt mosfet mosfet 300 volt hiperfet ixfn38n100 sot 227b diode fast transistor polar 2r4n120p ixfn44n100p ixfb44n100p	PDF