IXGP90N Search Results

IXGP90N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXGP90N33TBM-A Abstract: IXGP90N33 90n33 IXGP90N Contextual Info: IXGP90N33TBM-A Trench gate IGBT For PDP Applications VCES = 330V = 360A ICP VCE sat ≤ 1.60V OVERMOLDED TO-220 W/ FORMED LEAD (IXGP.M-A) Symbol Test Conditions VCES TJ = 25°C to 150°C 330 V VGEM Transient ±30 V IC25 TC = 25°C ICP TJ ≤ 150°C, tp ≤ 1 s	Original	ixgp90n33tbm-a o-220 90n33tb 5-27-08-b +3ixgp90n33 90n33 ixgp90n	PDF
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	d-68623 ixbod1-08 ixbod1-09 ixbod1-10 +12dsep30-06br dsep30-12cr ixgp70n33 ixgq90n33 sk0604 ixtp76n075 ixer35n120d1 ixgp70n33tbm-a dh60-18a vbo19 sk0712 ixth1n250	PDF

Catalog Datasheet

Type

Document Tags

PDF

IXGP90N33TBM-A

Abstract: IXGP90N33 90n33 IXGP90N
Contextual Info: IXGP90N33TBM-A Trench gate IGBT For PDP Applications VCES = 330V = 360A ICP VCE sat ≤ 1.60V OVERMOLDED TO-220 W/ FORMED LEAD (IXGP.M-A) Symbol Test Conditions VCES TJ = 25°C to 150°C 330 V VGEM Transient ±30 V IC25 TC = 25°C ICP TJ ≤ 150°C, tp ≤ 1 s

Original

ixgp90n33tbm-a o-220 90n33tb 5-27-08-b +3

PDF

IXGP70N33

Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim

Original

d-68623 ixbod1-08 ixbod1-09 ixbod1-10 +12

PDF