Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXFL44N100P Search Results

    IXFL44N100P Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFL44N100P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 22A I5-PAK Original PDF 4
    SF Impression Pixel

    IXFL44N100P Price and Stock

    Select Manufacturer

    IXYS Corporation IXFL44N100P

    MOSFETs 44 Amps 1000V 0.22 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFL44N100P
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Verical IXFL44N100P 22 4
    • 1 -
    • 10 $18.04
    • 100 $18.04
    • 1000 $18.04
    • 10000 $18.04
    Buy Now
    TME IXFL44N100P 22 1
    • 1 $12.63
    • 10 $12.63
    • 100 $12.63
    • 1000 $12.63
    • 10000 $12.63
    Buy Now

    Littelfuse Inc IXFL44N100P

    MOSFET, N-CH, 1KV, 22A, ISOPLUS I5-PAK ROHS COMPLIANT: YES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXFL44N100P Bulk 1
    • 1 $72.88
    • 10 $64.29
    • 100 $54.49
    • 1000 $54.49
    • 10000 $54.49
    Buy Now
    RS IXFL44N100P Bulk 8 Weeks 1
    • 1 $57.66
    • 10 $53.05
    • 100 $53.05
    • 1000 $53.05
    • 10000 $53.05
    Get Quote

    IXFL44N100P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFL44N100P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 22A Ω 240mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000


    Original
    IXFL44N100P 300ns 44N100P 4-01-08-D PDF

    44n10

    Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFL44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 22A Ω 240mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000


    Original
    IXFL44N100P 300ns 44N100P 4-01-08-D 44n10 PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000


    Original
    IXFL44N100P 300ns 44N100P 9-20-07-C PDF

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original
    000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P PDF