IXTA08N100P Search Results

IXTA08N100P Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTA08N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 0.8A TO-263	Original	PDF		4

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Littelfuse Inc IXTA08N100P Mosfet, N-Ch,1Kv, 0.8A, To-263; \|Littelfuse IXTA08N100P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark ()	IXTA08N100P	Bulk			1	1 $2.75 10 $2.75 100 $2.75 1000 $2.75 10000 $2.75	Buy Now
	IXTA08N100P	Bulk			300	1 - 10 - 100 - 1000 $1.69 10000 $1.58	Buy Now
RS	IXTA08N100P	Bulk		8 Weeks	50	1 - 10 - 100 $2.42 1000 $2.42 10000 $2.42	Get Quote
Onlinecomponents.com	IXTA08N100P					1 - 10 - 100 $1.63 1000 $1.39 10000 $1.29	Buy Now
Flip Electronics	IXTA08N100P		600			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXTA08N100P MOSFETs 0.8 Amps 1000V 20 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IXTA08N100P	Tube			300	1 - 10 - 100 - 1000 $1.78 10000 $1.78	Buy Now
TME	IXTA08N100P				1	1 $2.31 10 $1.84 100 $1.66 1000 $1.66 10000 $1.66	Get Quote

IXTA08N100P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Polar VHVTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on = 1000V = 0.8A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixta08n100p ixtp08n100p ixty08n100p o-263 +108n100p	PDF
Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTA08N100P IXTP08N100P IXTY08N100P = 1000V = 0.8A Ω ≤ 20Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000	Original	ixta08n100p ixtp08n100p ixty08n100p o-263 +208n100p 4-02-08-a	PDF
08N10 Abstract: IXTY08N100P ixtp08n100p Contextual Info: PolarTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 0.8A ≤ 20Ω Ω TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixta08n100p ixtp08n100p ixty08n100p o-263 +308n100p 4-02-08-a 08n10	PDF
IXTP08N100P Abstract: 08N100 08N100P IXTA08N100P ixtp08n100 IXTY08N100P T08N Contextual Info: IXTA08N100P IXTP08N100P IXTY08N100P PolarTM Power MOSFET VDSS ID25 = 1000V = 0.8A ≤ 20Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000	Original	ixta08n100p ixtp08n100p ixty08n100p o-263 +508n100p 4-02-08-a 08n100 ixtp08n100 t08n	PDF