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IXTP08N100P Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTP08N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 800MA TO-220	Original	PDF		4

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IXYS Corporation IXTP08N100P Trans MOSFET N-CH 1KV 0.8A 3-Pin(3+Tab) TO-220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IXTP08N100P		243		27	1 - 10 - 100 $2.11 1000 $1.85 10000 $1.85	Buy Now
TTI	IXTP08N100P	Tube			300	1 - 10 - 100 - 1000 $1.88 10000 $1.88	Buy Now
TME	IXTP08N100P		243		1	1 $2.54 10 $2.15 100 $1.72 1000 $1.41 10000 $1.41	Buy Now
Littelfuse Inc IXTP08N100P Mosfet, N-Ch, 1Kv, 0.8A, To-220-3; \|Littelfuse IXTP08N100P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark ()	IXTP08N100P	Bulk			1	1 $2.33 10 $2.33 100 $2.33 1000 $2.33 10000 $2.33	Buy Now
	IXTP08N100P	Bulk			300	1 - 10 - 100 - 1000 $1.55 10000 $1.45	Buy Now
RS	IXTP08N100P	Bulk		8 Weeks	50	1 - 10 - 100 $2.24 1000 $2.24 10000 $2.24	Get Quote
Onlinecomponents.com	IXTP08N100P					1 - 10 - 100 $1.80 1000 $1.34 10000 $1.22	Buy Now

IXTP08N100P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Polar VHVTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on = 1000V = 0.8A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixta08n100p ixtp08n100p ixty08n100p o-263 +108n100p	PDF
Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTA08N100P IXTP08N100P IXTY08N100P = 1000V = 0.8A Ω ≤ 20Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000	Original	ixta08n100p ixtp08n100p ixty08n100p o-263 +208n100p 4-02-08-a	PDF
08N10 Abstract: IXTY08N100P ixtp08n100p Contextual Info: PolarTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 0.8A ≤ 20Ω Ω TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixta08n100p ixtp08n100p ixty08n100p o-263 +308n100p 4-02-08-a 08n10	PDF
IXTP08N100P Abstract: 08N100 08N100P IXTA08N100P ixtp08n100 IXTY08N100P T08N Contextual Info: IXTA08N100P IXTP08N100P IXTY08N100P PolarTM Power MOSFET VDSS ID25 = 1000V = 0.8A ≤ 20Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000	Original	ixta08n100p ixtp08n100p ixty08n100p o-263 +508n100p 4-02-08-a 08n100 ixtp08n100 t08n	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	ixtd08n100p-1a ixtq22n60p ixfh20n80p dws20-200a +6ixfh24n80p ixfk180n15p ixtq22n50p dwhp16-12 ixgh64n60a3 ixfb50n80q2	PDF
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	d-68623 ixbod1-08 ixbod1-09 ixbod1-10 +12dsep30-06br dsep30-12cr ixgp70n33 ixgq90n33 sk0604 ixtp76n075 ixer35n120d1 ixgp70n33tbm-a dh60-18a vbo19 sk0712 ixth1n250	PDF