IXTP2R4N120P Search Results

IXTP2R4N120P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTP2R4N120P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 2.4A TO-220	Original	PDF		4

IXTP2R4N120P Price and Stock

Filter by Manufacturer

Select Manufacturer


IXYS Corporation IXTP2R4N120P MOSFET N-CH 1200V 2.4A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP2R4N120P	Tube			1	1 $7.86 10 $7.86 100 $4.51 1000 $3.41 10000 $3.41	Buy Now
Mouser Electronics	IXTP2R4N120P		169			1 $7.83 10 $5.53 100 $4.60 1000 $3.56 10000 $3.56	Buy Now
Verical	IXTP2R4N120P		307		9	1 - 10 $8.27 100 $5.86 1000 $5.63 10000 $5.63	Buy Now
TTI	IXTP2R4N120P	Tube			300	1 - 10 - 100 - 1000 $3.39 10000 $3.39	Buy Now
TME	IXTP2R4N120P		307		1	1 $6.79 10 $6.35 100 $4.63 1000 $3.99 10000 $3.99	Buy Now

New Advantage Corporation	IXTP2R4N120P		207		1	1 - 10 - 100 $9.70 1000 $8.95 10000 $8.95	Buy Now
Littelfuse Inc IXTP2R4N120P Disc Mosfet N-Ch Std-Polar To-220Ab/Fp/ Tube \|Littelfuse IXTP2R4N120P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTP2R4N120P	Bulk			300	1 - 10 - 100 $4.77 1000 $3.84 10000 $3.57	Buy Now

IXTP2R4N120P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2R4N120P Abstract: IXTA2R4N120P IXTH2R4N120P Contextual Info: Polar TM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A ≤ 7.5Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200	Original	IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P O-263 O-220 2R4N120P 2-08-A IXTA2R4N120P IXTH2R4N120P	PDF
Contextual Info: Polar TM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A Ω ≤ 7.5Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200	Original	IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P O-263 O-220 2R4N120P 2-08-A	PDF
Contextual Info: Polar VHVTM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A ≤ Ω 7.5Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P O-263 2R4N120P	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original		PDF
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250	PDF