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    IXGF25N250 Search Results

    IXGF25N250 Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXGF25N250
    IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 2500V 30A 114W I4-PAK Original PDF 5
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    IXGF25N250 Price and Stock

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    Littelfuse Inc IXGF25N250

    Discigbt Npt-Very Hi Voltage I4-Pak Iso+; |Littelfuse IXGF25N250
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    Newark IXGF25N250 Bulk 300
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    RS IXGF25N250 Bulk 8 Weeks 25
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    Onlinecomponents.com IXGF25N250
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    IXYS Corporation IXGF25N250

    IGBT 2500V 30A 114W I4-PAK
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    Future Electronics IXGF25N250 Tube 29 Weeks 300
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    TME IXGF25N250 300
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    IXGF25N250 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: High Voltage IGBT VCES = 2500V IC25 = 30A VCE sat ≤ 2.9V IXGF25N250 For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V


    Original
    ixgf25n250ic11025n2505p-p528+14-21-08-e PDF

    25N250

    Abstract: ixgf25n250 IC tl 072 G25N g25n250 TF230
    Contextual Info: High Voltage IGBT IXGF25N250 VCES = 2500V = 30A IC25 VCE sat ≤ 2.9V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    ixgf25n250ic11025n2505p-p528+54-21-08-eic tl 072g25ng25n250tf230 PDF

    ixgf

    Abstract: IXGF25N250
    Contextual Info: Preliminary Technical Information IXGF25N250 High Voltage IGBT VCES = 2500 V IC25 = 30 A VCE sat ≤ 2.9 V For Capacitor Discharge Applications (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original
    ixgf25n250ic11025n2505p-p528+204-27-07-dixgf PDF

    Contextual Info: High Voltage IGBT IXGF25N250 VCES = 2500V = 30A IC25 VCE sat ≤ 2.9V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM (IXGF) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    ixgf25n250ic11025n2505p-p528+14-21-08-e PDF

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Contextual Info: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


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    o-264ixbx55n300plus247ixbf55n300+12o-268o-247ixgf30n400ixgf4n400ixgf25n250pulserisoplusixgf54n400discrete igbtsixth1n250ixbx64n250ixgt25n250 PDF