IXFL44N100P Search Results

IXFL44N100P Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFL44N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 22A I5-PAK	Original	PDF		4

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Littelfuse Inc IXFL44N100P Mosfet, N-Ch, 1Kv, 22A, Isoplus I5-Pak; \|Littelfuse IXFL44N100P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFL44N100P	Bulk			1	1 $69.67 10 $62.47 100 $53.65 1000 $53.65 10000 $53.65	Buy Now
RS	IXFL44N100P	Bulk		8 Weeks	1	1 $57.66 10 $53.05 100 $53.05 1000 $53.05 10000 $53.05	Get Quote
IXYS Corporation IXFL44N100P Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFL44N100P		22		1	1 $12.40 10 $12.40 100 $12.40 1000 $12.40 10000 $12.40	Buy Now

IXFL44N100P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFL44N100P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 22A Ω 240mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000	Original	ixfl44n100p 300ns 44n100p 4-01-08-d	PDF
44n10 Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFL44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 22A Ω 240mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000	Original	ixfl44n100p 300ns 44n100p 4-01-08-d +144n10	PDF
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000	Original	ixfl44n100p 300ns 44n100p 9-20-07-c	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200v ixfb30n120p ixfl30n120p ixfn30n120p +14ixfl32n120p ixfn32n120p plus220 ixfv110n10ps 1200 volt mosfet 1000 volt mosfet mosfet 300 volt hiperfet ixfn38n100 sot 227b diode fast transistor polar 2r4n120p ixfn44n100p ixfb44n100p	PDF