IXFR30N110P Search Results
IXFR30N110P Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IXFR30N110P |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1100V 16A ISOPLUS247 | Original | 4 |
IXFR30N110P Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR30N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ |
Original |
ixfr30n110p300nsisoplus247e153432+1 | |
30N110PContextual Info: OBSOLETE IXFR30N110P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V |
Original |
ixfr30n110p30n110p4-01-08-a | |
30N110P
Abstract: ISOPLUS247 IXFR30N110P
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Original |
ixfr30n110pisoplus247e153432300ns+2 | |
1200 volt mosfet
Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
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Original |
000-1200vixfb30n120pixfl30n120pixfn30n120p+14 |