SI4114DY Search Results
SI4114DY Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI4114DY | Vishay Siliconix | N-Channel 20-V (D-S) MOSFET | Original | 141.27KB | 7 | ||
| SI4114DY-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 20A 8-SOIC | Original | 10 | |||
| SI4114DY-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 20A 8-SOIC | Original | 10 |
SI4114DY Price and Stock
Vishay Intertechnologies SI4114DY-T1-GE3Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 20A; Idm: 50A; 5.7W |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4114DY-T1-GE3 | 2,500 |
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SI4114DY-T1-GE3 | 52,500 | 2,500 |
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| SI4114DY-T1-GE3 | 97 | 3 |
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| SI4114DY-T1-GE3 | 29 | 9 |
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SI4114DY-T1-GE3 | Tape & Reel | 2,500 | 52 Weeks | 2,500 |
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SI4114DY-T1-GE3 | 1,759 |
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SI4114DY-T1-GE3 | 52,500 | 52 Weeks | 2,500 |
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| SI4114DY-T1-GE3 | Cut Strips | 97 | 1 |
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| SI4114DY-T1-GE3 | Cut Strips | 29 | 52 Weeks | 1 |
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SI4114DY-T1-GE3 | Tape & Reel | 430 | 10 |
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| SI4114DY-T1-GE3 | Cut Tape | 430 | 1 |
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| SI4114DY-T1-GE3 | Tape & Reel | 2,500 |
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| SI4114DY-T1-GE3 | Tape & Reel | 2,500 |
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| SI4114DY-T1-GE3 | Cut Tape | 1 |
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SI4114DY-T1-GE3 | Reel | 10,000 | 2,500 |
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SI4114DY-T1-GE3 | 253 |
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SI4114DY-T1-GE3 | 53 Weeks | 2,500 |
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Vishay Intertechnologies SI4114DY-T1-E3Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 20A; Idm: 50A; 5.7W |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SI4114DY-T1-E3 | 2,500 |
|
Get Quote | |||||||
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SI4114DY-T1-E3 | Tape & Reel | 52 Weeks | 2,500 |
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Buy Now | |||||
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SI4114DY-T1-E3 | 6,006 |
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SI4114DY-T1-E3 | Tape & Reel | 2,500 |
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Buy Now | ||||||
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SI4114DY-T1-E3 | Reel | 2,500 |
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Buy Now | ||||||
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SI4114DY-T1-E3 | 53 Weeks | 2,500 |
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Get Quote | ||||||
Vishay Intertechnologies SI4114DYT1E3N-CHANNEL 20-V (D-S) MOSFET Small Signal Field-Effect Transistor, 15.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4114DYT1E3 | 2,480 |
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Get Quote | |||||||
SI4114DY Datasheets Context Search
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Contextual Info: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V e VDS (V) 20 20 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) RoHS 27.5 nC APPLICATIONS |
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si4114dysi4114dy-t1-e318-jul-08 | |
Si4114DY
Abstract: Si4114DY-T1-E3 Si4114DY-T1-GE3
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si4114dy2002/95/ecsi4114dy-t1-e3si4114dy-t1-ge3+1 | |
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Contextual Info: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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si4114dy2002/95/ecsi4114dy-t1-e3si4114dy-t1-ge3+3 | |
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Contextual Info: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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si4114dy2002/95/ecsi4114dy-t1-e3si4114dy-t1-ge3+1 | |
Si4114DY
Abstract: Si4114DY-T1-E3
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si4114dysi4114dy-t1-e308-apr-05 | |
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Contextual Info: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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si4114dy2002/95/ecsi4114dy-t1-e3si4114dy-t1-ge3+2 | |
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Contextual Info: SPICE Device Model Si4114DY www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si4114dy2002/95/ec2011/65/eujs709a+1 | |
Si4114DYContextual Info: SPICE Device Model Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si4114dys-81897rev25-aug-08 | |
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Contextual Info: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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si4114dy2002/95/ecsi4114dy-t1-e3si4114dy-t1-ge3+2 | |
mosfet 716
Abstract: AN609 Si4114DY 244304
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si4114dyan60922-apr-08mosfet 716+1 | |
Si4114DY
Abstract: Si4114DY-T1-E3 Si4114DY-T1-GE3
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si4114dy2002/95/ecsi4114dy-t1-e3si4114dy-t1-ge3+1 | |
Si4114DYContextual Info: SPICE Device Model Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si4114dy18-jul-08 | |
schematic diagram atx Power supply 500w
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Arduino Mega2560
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 | |
220v AC voltage stabilizer schematic diagram
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ad9272p462-ndlng295lfcp2up463-nd+11 | |
Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
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diod92vmn-sg2127-0911diode sot-23 marking 15dsi4210+8 | |