2N706
Contextual Info: 2N706 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 20V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.01A All Semelab hermetically sealed products
|
Original
|
2n706o206aa0/10m19-jun-02 |
PDF
|
ILS 404 CB
Abstract: 2n706 transistor transistor array K1 marking 3001 8AT transistor 2n706
Contextual Info: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.
|
OCR Scan
|
mil-s-19500/120cmil-s-19500/120b2n706mil-s-19500+5ils 404 cb2n706 transistortransistor array k1 marking3001 8attransistor 2n706
|
PDF
|
mwab
Abstract: 2N706 transistor 2n706 2n706 transistor mwab 3.3
Contextual Info: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.
|
OCR Scan
|
mil-s-19500/120cmil-s-19500/120b2n706mjl-s-19900+5mil-s-19500mwabtransistor 2n7062n706 transistormwab 3.3
|
PDF
|
2N706
Contextual Info: 2N706 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 20V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.01A All Semelab hermetically sealed products
|
Original
|
2n706o206aa0/10m16-jul-02 |
PDF
|
2N706
Contextual Info: 2N706 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 20V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.01A All Semelab hermetically sealed products
|
Original
|
2n706o206aa0/10m2-aug-02 |
PDF
|
2n4276
Contextual Info: N PN Transistors saturated switches Type No Case Sty •• V CIIO V, M,n V CEO 2N706 TO•18 25 15 2N708 TO·18 40 15 20 12 2N744 TO·18 2N753 TO·18 25 2NB34 TO·18 40 2N2369 TO·18 40 15 2N2369A TO·18 40 15 JAN2N2369A TO·18 40 15 JANTX2N2369A TO·18 40
|
Original
|
2n7062n7082n7442n753+72nb342n23692n2369ajan2n2369a10ijamps27142n4276
|
PDF
|
2n706 transistor
Abstract: transistor 2n706 2n2222 2N2222AA 2N706 2n2222 jan 03150 transistor transistor 2N2222 2N708 2N718
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 sus VOLTS Ic (max) AMPS 2N706 15 0.05 2N708 15 - 2N718 40h 0.5 2N718AA 50 2N720A VcEO PACKAGE TO-18 T0206AA DEVICE TYPE @ It/ ^ CE min/max @ mA/V 1*FE c<je fx p (MHz) 20@10/1 0.6@10/1 6 200 30-120@10/l
|
OCR Scan
|
t0206aa2n7062n7082n718+122n718aa2n720a2n930a2n22212n2221aa2n22222n706 transistortransistor 2n7062n2222aa2n2222 jan03150 transistortransistor 2n2222
|
PDF
|
2n706 transistor
Abstract: transistor 2n706 2n2222 jan 2N706 2N706 JAN
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 ^C E O PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS @ IC/ ^ C E min/max @ mA/V hpE VcE(jat) @ It/Iß v@ mA/mA TO-18 T0206AA < i\ C<p P (MHz) ÌT 20@ 10/1 0.6@10/1 6 200 30-120@10/l 0.4@10/1 6 300
|
OCR Scan
|
t0206aa2n7062n7082n718+102n718aa2n720a2n930a2n22212n2221aa2n22222n706 transistortransistor 2n7062n2222 jan2n706 jan
|
PDF
|
AC127
Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
Contextual Info: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub lication. The manuscripts may deal with any
|
OCR Scan
|
2n24a2n34a2n38a2n43a+162n44a2n59c2n60a2n61a2n61boc77-309ac127cv7089ac1252sb415oc71ad161cv8615hj17dad1422n3278
|
PDF
|
motorola 2N2270
Abstract: 2N5861 MOTOROLA
Contextual Info: MOTOROLA SC ÎXSTRS/R F} D E | b 3 b 7 a 5 4 DD?b707 D Small-Signal Metal Transistors Selector Guide Errata s< This errata provides the missing page number references for the device index appearing on Page 2. Device Index Also Available In Specification Levels:
|
OCR Scan
|
2n6562n6572n6972n706+82n7082n7182n718a2n869a2n9142n916motorola 2n22702n5861 motorola
|
PDF
|
|
Contextual Info: RAY THE ON/ SEM IC O N D U C T OR 7597360 "TM RAYTHEON. D Ë J 75=1731.0 0005551 b SE M IC O N D U C T O R 94D Product Specifications Small Signal Transistors 0555 1 D 712S~-/3~ C J N PN Raytheon Ultra High Speed Switches CJ NPN Description High speed gold doped silicon epitaxial tran
|
OCR Scan
|
100ma2n2369a/jan2n41372n706a+42n236827bsc-050bsc54bsc
|
PDF
|
AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
|
OCR Scan
|
trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
|
PDF
|
2N3303
Abstract: MM8520 2n6431 2n3736 MM420 2n3712 2N4209 2N3252 MOTOROLA 2n914 jantx 2n3506 jan
Contextual Info: 6367254 MOTOROLA SC XSTRS/R 80C 7 6 6 9 8 F tIOTOROLA SC -CXSTRS/R F> Âü D Difl t,3b?554 □ D 7 b b cifi 3 Low Frequency — Small-Signal Metal CASE 22-03.TO-18 . CASE 20-03 . TÔr72 Motorola Small-Signal Metal Can Transistors are designed for use as General-Purpose Amplifiers, High-Speed Switches, HighVoltage Amplifiers, Low-Level/Low-Noise Amplifiers, HighFrequency Oscillators, Choppers, and Darlingtons. These de
|
OCR Scan
|
mil-195002n3303mm85202n6431+72n3736mm4202n37122n42092n3252 motorola2n914 jantx2n3506 jan
|
PDF
|
transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
|
OCR Scan
|
transistor 2n4st25c transistor2n407 transistor2sa114+6tfk 808transistor 2sc124sf1222ge2 transistortfk 877tfk 748
|
PDF
|
|
|
2sc113
Abstract: CI44
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
|
OCR Scan
|
2sc113ci44 |
PDF
|
transistor A495
Abstract: 2SC622 f4 f 150s 2n3131 2SC804 MM1758 2SC621A TMT697 2SC740 NPC187
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
|
OCR Scan
|
t0106te39042n914a2n2272+14300m5a2sc10010b705300matransistor a4952sc622f4 f 150s2n31312sc804mm17582sc621atmt6972sc740npc187
|
PDF
|
germanium transistor CK722
Abstract: CK722 CK721 SSA480 SA5-37 2sa525 2SC621 SA52B 2SC912 2N3400
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
|
OCR Scan
|
bsw88200msa15on0bsw89+14bsx81200m5absx81absx81bgermanium transistor ck722ck722ck721ssa480sa5-372sa5252sc621sa52b2sc9122n3400
|
PDF
|
2sc113
Abstract: STE401 A154 GI3643 ST01 T0106 T018
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
|
OCR Scan
|
bsw88200msa15on0bsw89+11bsx81200m5absx81absx81b2sc113ste401a154gi3643st01t0106t018
|
PDF
|
transistor bc128
Abstract: 2SC402 PMT120 2sc401 U23A BC-128 BSY37 2SC185 bc128 transistor 2SC183
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
|
OCR Scan
|
t0106te39042n914a2n2272+14300m5a2sc10010b705300matransistor bc1282sc402pmt1202sc401u23abc-128bsy372sc185bc128 transistor2sc183
|
PDF
|
2SC111
Abstract: 2N2886 2SC15-1 2sc113 BF140 TRANSISTOR BC 187 250M 2SC153 2SC38 QD150-78
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
|
OCR Scan
|
bsw88200msa15on0bsw89+14bsx81200m5absx81absx81b2sc1112n28862sc15-12sc113bf140transistor bc 187250m2sc1532sc38qd150-78
|
PDF
|
2SC921
Abstract: BFS29P 2T85 2SD128 BF189 2SC622 2SD75 2SD128 transistor 2N784A a3t2222
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
|
OCR Scan
|
t0106te39042n914a2n2272+14300m5a2sc10010b705300ma2sc921bfs29p2t852sd128bf1892sc6222sd752sd128 transistor2n784aa3t2222
|
PDF
|
2N5735
Abstract: bc507 BSW12 BSY37 2N5736 2N784A 2sc113 BLY11 MM1758 TIS107
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. 0 i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
|
OCR Scan
|
t0106te39042n914a2n2272+14300m5a2sc10010b705300ma2n5735bc507bsw12bsy372n57362n784a2sc113bly11mm1758tis107
|
PDF
|
NE800296
Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in
|
Original
|
an82901-124-hourne800296diode deg avalanche zo 150 63+8ne72089ne8002sk3448universal jfet biasing curve graphgunn diode ghz s-parameterne800196impatt diodene800495-4
|
PDF
|
NE800296
Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in
|
Original
|
an82901-1ne800296ne800196ne24406+7diode deg avalanche zo 150 63sk3448ne8002ne868199shockley diodene800495-4shockley diode application
|
PDF
|