MT59 Search Results

Contextual Info: ADVANCE M I ir a n M 256K x 18/128K x 36 2.5V I/O, FLOW-THROUGH LATE WRITE SRAM A C|U|h I A T F MT59L256V18F MT59L128V36F 1 •- WRITE SRAM Dual Clock and Single Clock FEATURES • • • • • • • • • • • • • • • • • Fast cycle tim es 4.5ns, 5ns, 6ns and 7ns

Contextual Info: ADVANCE 256K x 18/128K x 36 HSTL, PIPELINED LATE WRITE SRAM MT59L256H18P MT59L128H36P 4.5Mb LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • • • Fast cycle times 4.5ns, 5ns, 6ns and 7ns 256K x 18 or 128K x 36 configurations

MT591

Contextual Info: F=l SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR I ISSUE 3- OCTOBER 1995 FEATURES * Low equivalent on-resistance; RcEl~al 210mQ at 1A E c COMPLEMENTARY B FM MT591 TYPE - PARTMARKING 491 DETAIL F ABSOLUTE MAXIMUM SOT23 RATINGS. k Collector-Base —. Voltage

Contextual Info: ADVANCE-PRODUCT PREVIEW |V/11 f I p [ ~ | \| 2 5 6 K x 18, 1 2 8 K x 32/36 LV TTL , P I P E L I N E D B U R S T L A T E W R I T E S R A M MT59L256L18B, MT59L128L32B, MT59L128L36B +3.3V Vdd, Selectable Burst Mode FEATURES • • • • • • • • •

Contextual Info: SOT23 NPN SILICON PLANAR M ED IU M POWER TRANSISTOR ISSU E 3 - OCTOBER 1995 FEATURES * Very Low Equivalent Résistance, RCE lat 195mQ at 1A CO M PLEM EN TA RY TYPE PARTMARKING D E T A IL - FM MT591A 41A ABSOLUTE M A X IM U M RATINGS. PARAMETER SYMBOL Collector-Base Voltage

Contextual Info: AD VA NC E 25 6 K x 1 8 / 1 2 8K x 36 LVTTL, PIPELINED LATE WRITE SRAM MICRON U TECHNOLOGY, INC. 4.5Mb LATE WRITE SRAM MT59L256L18P MT59L128L36P FEATURES * Fast cycle times 5ns, 6ns and 7ns * 256K x 18 or 128K x 36 configurations * Single +3.3V +0.3V/-0.2V power supply (Vdd)

Contextual Info: AD VA NC E 2 5 6 K x 1 8 / 1 2 8K x 36 LVTTL, L A T C H E D LATE WRITE SRAM MICRON U TECHNOLOGY, INC. MT59L256L18L MT59L128L36L 4.5Mb LATE WRITE SRAM FEATURES * * * * * * * * * * * * * * * * * Fast cycle times 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations

Contextual Info: ADVANCE-PRODUCT PREVIEW M ira n M 1 2 8 K X 18, 5 4 K X 3 2 /3 5 I LVTTL, PIPELINED BURST LATE WRITE SRAM 2.25Mb BURST LATE WRITE SRAM S S f MT59L64L32B' + 3.3V V dd, Selectable Burst Mode FEATURES • • • • • • • • • • • • • • •

Contextual Info: ADVANCE 256K x 18/128K x 36 HSTL, LATCHED LATE WRITE SRAM MT59L256H18L MT59L128H36L 4.5Mb LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • • • • Fast cycle times 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations

Contextual Info: ADVANCE 256K x 18/128K x 36 2.5V I/O, LATCHED LATE WRITE SRAM MT59L256V18L MT59L128V36L 4.5Mb LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • • Fast cycle times 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations

Contextual Info: ADVANCE 256K x 18/128K x 36 LVTTL, LATCHED LATE WRITE SRAM MT59L256L18L MT59L128L36L 4.5Mb LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • • Fast cycle tim es 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations

Contextual Info: ADVANCE-PRODUCT PREVIEW M il| P n iV I 128K x 18, 64K x 32/36 LVTTL, P IP E L IN E D B U R S T LA T E W R IT E S R A M MT59L128L18B, MT59L64L32B, MT59L64L36B +3.3V Vdd, Selectable Burst Mode FEATURES • • • • • • • • • • • • • •

Contextual Info: ADVANCE 25 6 K x 1 8 / 1 2 8K x 36 2. 5V I/O, P I P E L I N E D L A T E W R I T E S R A M MICRON U TECHNOLOGY, INC. 4.5Mb LATE WRITE SRAM MT59L256V18P MT59L128V36P FEATURES * Fast cycle times 4.5ns, 5ns, 6ns and 7ns * 256K x 18 or 128K x 36 configurations

DD 127 D 7m

Contextual Info: AD VA NC E 2 5 6 K x 1 8 / 1 2 8K x 36 2. 5V I/O, L A T C H E D L A T E W R I T E S R A M MICRON U TECHNOLOGY, INC. MT59L256V18L MT59L128V36L 4.5Mb LATE WRITE SRAM FEATURES * * * * * * * * * * * * * * * * * Fast cycle times 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations

Contextual Info: ADVANCE |V/|C RQ N I A T E l _ m l_ MT59L256V18L MT59L128V36L WRITE SRAM FEATURES • • • • • • • • • • • • • • • • • Fast cycle times 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations Single +3.3V +0.3V/-0.2V p o w e r s u p p ly (V d d )

Contextual Info: ADVANCE M ir a r i M 2 5 5 K X I 8 /1 2 8 K X 3 6 I LVTTL, FLOW-THROUGH LATE WRITE SRAM d 5 M h ^ ,J IV IU I A T F •- MT59L256L18F MT59L128L36F WRITE SRAM Dual Clock and Single Clock FEATURES • • • • • • • • • • • • • • • •

Contextual Info: ADVANCE M IC R O N 2 5 6 K X 1 8 /1 2 8 K X 36 • HSTL, FLOW-THROUGH LATE WRITE SRAM d 5Mh I ATF » IW IV IU L n i I WRITE SRAM MT59L256H18F MT59L128H36F Dual Clock and Single Clock FEATURES • • • • • • • • • • • • • • • •

Contextual Info: AD VA NC E 25 6 K x 1 8 / 1 2 8K x 36 HSTL, L A T C H E D LATE WRITE SRAM MICRON U TECHNOLOGY, INC. MT59L256H18L MT59L128H36L 4.5Mb LATE WRITE SRAM FEATURES * * * * * * * * * * * * * * * * * * * Fast cycle times 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations

Contextual Info: Infrared LED Product No: MT5 9 0 0 -I R Peak Emission Wavelength: 900nm The MT5900-IR is an infrared T 1 3/4, 5mm water clear LED designed for applications requiring high power and high speed packaged with the lens optimized to produce a narrow viewing angle.

Contextual Info: Infrared LED Product No: MT5900-IR Peak Emission Wavelength: 900nm The MT5900-IR is an infrared T 1 3/4, 5mm water clear LED designed for applications requiring high power and high speed packaged with the lens optimized to produce a narrow viewing angle. FEATURES

Contextual Info: AUSTIN SEMICONDUCTOR, INC. SRAM 8K MT59 6428JL8.3£ 8 K x 8 SRAM X 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-38294, Class M • MIL-STD-883, Class B • Radiation tolerant consult factory FEATURES • High speed: 12, 15, 20, 25 and 35ns • Battery backup: 2V data retention

HC- 543

Contextual Info: AD VA NC E 25 6 K X 1 8 / 1 2 8K x 36 HSTL, F L O W - T H R O U G H LATE WRITE SRAM MICRON U TECHNOLOGY, INC. 4.5Mb LATE WRITE SRAM MT59L256H18F MT59L128H36F Dual Clock and Single Clock FEATURES * Fast cycle times 4.5ns, 5ns, 6ns and 7ns * 256K x 18 or 128K x 36 configurations

Contextual Info: ADVANCE 256K x 18/128K x 36 2.5V I/O, PIPELINED LATE WRITE SRAM MICRON I TECHNOLOGY, INC. MT59L256V18P MT59L128V36P 4.5Mb LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • Fast cycle times 4.5ns, 5ns, 6ns and 7ns 256K x 18 or 128K x 36 configurations

Contextual Info: ADVANCE-PRODUCT PREVIEW M i m n M 2 5 b K X 18, 1 2 8 K X 3 2 /3 b I LVTTL, PIPELINED BURST LATE WRITE SRAM 4.5Mb BURST LATE WRITE SRAM ¡¡S S S MT59L128L32B’ + 3.3V Vdd, Selectable Burst Mode FEATURES • • • • • • • • • • • •