U23A Search Results

k14a55

Abstract: K14A55D TK14A55D transistor K14A55D
Contextual Info: TK14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)

Contextual Info: 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 262,144 x 9 524,288 x 9 FEATURES: • • • • • • • • • • • • • • • • Choose among the following memory organizations: IDT72V2101 ⎯ 262,144 x 9 IDT72V2111 ⎯ 524,288 x 9 Pin-compatible with the IDT72V261/72V271 and the IDT72V281/

Contextual Info: TK12X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK12X60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.38 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)

K13A65U

Abstract: TK13A65U k13a65 650VVGS marking code TC Silicon N Channel MOS Type Switching Regulator
Contextual Info: TK13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK13A65U Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.)

k4a60d

Abstract: K4A60 TK4A60D
Contextual Info: TK4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)

K12A50D

Abstract: TK12A50D K12a50 K12A50D* VDD400 K*A50D
Contextual Info: TK12A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK12A50D ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.45 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0S (標準)

Contextual Info: TK2Q60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ TK2Q60D ○ スイッチングレギュレータ用 6.5 ± 0.2 オン抵抗が低い。 : RDS (ON) = 3.2 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 1.0 S (標準)

K12A60U

Abstract: TK12A60U k12a60 code MCV marking MCV
Contextual Info: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)

k3374

Abstract: 2SK3374
Contextual Info: 2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

TK20X60U

Contextual Info: TK20X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK20X60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)

K4115 toshiba

Abstract: TRANSISTOR K4115 k4115 2SK4115 K4115 toshiba transistor DSAE002454 toshiba k4115 2SK4115* equivalent k411 SC-65
Contextual Info: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) 20.0±0.3 Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 2.0 • 9.0 High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)

2SJ619

Contextual Info: 2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ619 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.7 S (typ.)

Contextual Info: TK13A50DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ TK13A50DA ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.39 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)

K2613

Abstract: toshiba k2613 2SK2613
Contextual Info: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

K10A50D

Abstract: K10A50 TK10A50D VDD400 K*A50D toshiba K10A50D
Contextual Info: TK10A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK10A50D ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.62 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 5.0 S (標準)

TK12D60U

Contextual Info: TK12D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12D60U Switching Regulator Applications Unit: mm 10.0±0.3 Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)

SC-65

Abstract: TK16J55D K16J55D
Contextual Info: TK16J55D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK16J55D 単位: mm ○ スイッチングレギュレータ用 20.0±0.3 2.0 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.5 S (標準) 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 550 V)

nn30195

Contextual Info: DATA SHEET Tentative Part No. NN30195A Package Code No. ⎯ Publication date: April 2012 Ver. EB 1 NN30195A NN30195A (Tentative) 6 A Synchronous DC-DC Step Down Regulator with Integrated Power MOSFET „ Overview NN30195A is a synchronous DC-DC Step Down Regulator (1-ch) with integrated power MOSFETs, which employs hysteretic

SL23EP05

Abstract: SL23EP05SC-1 SL23EP05SC-1T SL23EP05SI-1
Contextual Info: SL23EP05 ⎯ Low Jitter and Skew 10 to 220 MHz Zero Delay Buffer ZDB Key Features • • • • • • • • • • • 10 to 220 MHz operating frequency range Low output clock jitter: ⎯ 20 ps-typ cycle-to-cycle jitter ⎯ 15 ps-typ period jitter

Contextual Info: Preliminary Data Sheet NP74N04YUG R07DS0017EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP74N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 5.5 mΩ MAX. (VGS = 10 V, ID = 37.5 A)

Contextual Info: Preliminary Data Sheet N0600N R07DS0220EJ0100 Rev.1.00 Jan 25, 2011 MOS FIELD EFFECT TRANSISTOR Description The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on 1 = 25 m MAX. (VGS =10 V, ID = 15 A)

Contextual Info: Preliminary Data Sheet NP23N06YDG R07DS0014EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A)

DDR333

Abstract: DDR400 EDD5108AFTA EDD5108AFTA-5B-E EDD5108AFTA-5C-E EDD5108AFTA-6B-E EDD5108AFTA-7A-E EDD5116AFTA
Contextual Info: DATA SHEET 512M bits DDR SDRAM EDD5108AFTA 64M words x 8 bits EDD5116AFTA (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization ⎯ 16M words × 8 bits × 4 banks (EDD5108AFTA) ⎯ 8M words × 16 bits × 4 banks (EDD5116AFTA)

1333G

Abstract: EBJ52UD6BASA EBJ52UD6BASA-8A-E DDR3 sodimm pcb layout a2198 EBJ52UD6BASA-AC-E
Contextual Info: PRELIMINARY DATA SHEET 512MB DDR3 SDRAM SO-DIMM EBJ52UD6CASA, EBJ52UD6BASA 64M words x 64 bits, 2 Ranks Specifications Features • Density: 512MB • Organization ⎯ 64M words × 64 bits, 2 ranks • Mounting 8 pieces of 512M bits DDR3 SDRAM sealed in FBGA