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    Toshiba America Electronic Components

    Toshiba America Electronic Components TK12A50D(STA4,Q,M)

    MOSFETs N-Ch MOS 12A 500V 45W 1350pF 0.52
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics () TK12A50D(STA4,Q,M) 154
    • 1 $3.41
    • 10 $1.71
    • 100 $1.57
    • 1000 $1.14
    • 10000 $1.14
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    TK12A50D(STA4,Q,M) 139
    • 1 $3.41
    • 10 $1.71
    • 100 $1.57
    • 1000 $1.14
    • 10000 $1.14
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    Toshiba America Electronic Components TK12A50W,S5X

    MOSFETs Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ
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    Mouser Electronics () TK12A50W,S5X
    • 1 $3.27
    • 10 $1.63
    • 100 $1.46
    • 1000 $1.02
    • 10000 $0.94
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    TK12A50W,S5X
    • 1 $3.31
    • 10 $2.15
    • 100 $1.48
    • 1000 $1.14
    • 10000 $1.07
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    K12A50 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K12A50D

    Abstract: TK12A50D K12a50 K12A50D* VDD400 K*A50D
    Contextual Info: K12A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K12A50D ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.45 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0S (標準)


    Original     		TK12A50D SC-67 2-10U1B 20070701-JA K12A50D TK12A50D K12a50 K12A50D* VDD400 K*A50D PDF

    K12A50D

    Abstract: K12a50 tk12a50 toshiba marking code transistor k12a50d TK12A50D K*A50D K12A TK-12A
    Contextual Info: K12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TK12A50D K12A50D K12a50 tk12a50 toshiba marking code transistor k12a50d TK12A50D K*A50D K12A TK-12A PDF

    K12A50D

    Abstract: K*A50D
    Contextual Info: K12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TK12A50D K12A50D K*A50D PDF

    K12A50D

    Abstract: toshiba marking code transistor k12a50d TK12A50D K12a50 K12A50D* AR-500 K-12A
    Contextual Info: K12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TK12A50D K12A50D toshiba marking code transistor k12a50d TK12A50D K12a50 K12A50D* AR-500 K-12A PDF

    K12A50D

    Abstract: TK12A50D
    Contextual Info: K12A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K12A50D ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.45 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0S (標準)


    Original     		TK12A50D K12A50D TK12A50D PDF

    K12A50D

    Abstract: K12a50 TK12A50D
    Contextual Info: K12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TK12A50D K12A50D K12a50 TK12A50D PDF