K12A Search Results

K12D

Abstract: TACTILE SWITCH nc K12A k12b K12DK K12PL K12C 1 5N K12AL K12P K12C
Contextual Info: K12 Key Switch The K12 key switch has been successful in measurement and control equipment, in industrial electronics, as well as in automotive applications. The contact system is distinguished by its high switching reliability during the life of one million operations, because making

K12A

Contextual Info: Advance‡ 1/6-Inch SOC Optional VGA CMOS Digital Image Sensor Full Sensor Features 1/6-Inch SOC Optional VGA CMOS Digital Image Sensor Product Brief with ODS ST9V112-S Select (SOC0366) ST9V112-G General (0366) (Mfg part number K12A [packaged] / Mfg part number K12A [die])

K12A50D

Abstract: toshiba marking code transistor k12a50d TK12A50D K12a50 K12A50D* AR-500 K-12A
Contextual Info: K12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)

K12A55D

Contextual Info: K12A55D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K12A55D ○ スイッチングレギュレータ用 : Vth = 2.0～4.0 V (VDS = 10 V, ID = 1 mA) 1.14 ± 0.15 0.69 ± 0.15 Ф0.2 M A 記号 定格 単位 ド レ イ ン ・ ソ ー ス 間 電 圧

P 181 YE

Abstract: LV327 K12 high performance key switch
Contextual Info: K12 High Performance Key Switches Features/Benefits • Excellent tactile feel • Wide choice of LED colors, travel and actuator forces • • • • • High reliability / long life Typical Applications • Automotive • Off-road transportation • Industrial electronics

K12GOL

Abstract: K12G0 K12D K12A K12C K12P power ye 0204
Contextual Info: K12 High Performance Key Switches Features/Benefits • Excellent tactile feel • Wide choice of LED colors, • • • • • travel and actuator forces High reliability / long life Sealed version available Designed for low-level switching Double stroke version available

K12A60D

Abstract: TK12A60D k12a60d circuits k12a60 K12A K12A60D transistor K12A60D transistor data K-12A TK-12A
Contextual Info: K12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)

k13a

Abstract: oa1 transistor one band compander circuit application THAT4320S JESD22-A113-B K12A THAT4320 QSOP-28
Contextual Info: T H AT Corporation Pre-trimmed Low-voltage Low-power Analog Engine IC THAT 4320S FEATURES APPLICATIONS • Companding noise reduction · Pre-trimmed VCA & RMS detector · Wireless microphones · Wide supply voltage range: 4.5V~16V · Wireless instrument packs

Contextual Info: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)

K12A53D

Abstract: TK12A53D
Contextual Info: K12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A53D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

Contextual Info: K12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A53D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

K12A60D

Abstract: TK12A60D k12a60d circuits K12A60D transistor k12a60 K12A K12A60D transistor data
Contextual Info: K12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)

K12A60D

Abstract: TK12A60D k12a60
Contextual Info: K12A60D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K12A60D ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.5 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 600 V)

Contextual Info: Pre-trimmed Low-voltage Low-power Analog Engine Dynamics Processor IC THAT 4320 FEATURES APPLICATIONS • Pre-trimmed VCA & RMS detector • Companding noise reduction • Wide supply voltage range: 4.5V~16V • Wireless microphones • Low supply current: 3.7mA typ. 5V

TTAE4320

Contextual Info: Pre-trimmed Low-voltage Low Power Dynamics Processor IC TTAE4320 Preliminary AP PLI CA TIONS FEA TURES • Companding noise reduction · Pre-trimmed VCA & RMS detector · Wide supply voltage range: 4.5V~16V · Wireless microphones · Low supply current: 3.7mA typ. 5V

Contextual Info: K12A60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 K12A60U ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.36Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.0 S (標準)

k12a60

Abstract: K12A60U TK12A60U transistor K12A
Contextual Info: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)

RK09K12C0d

Abstract: RK09K12C RK09K12A0 RK09K RK09K12A RK09K1130AAU RK09K1110AK4 RK09K1110 RK09K113004U RK09K1130A5R
Contextual Info: 绝缘轴电位器 9型绝缘轴铰接型 RK09K/RK09D系列 本体宽度9.8mm的小型，应对高密度整机设计。 主要规格 旋转电位器 项目 规格 最高使用电压 全旋转角度 滑动电位器 %20% 单联 总阻值允许差 2联 %30% 单联

adwill

Abstract: k12a sensor
Contextual Info: Advance‡ 1/6-Inch SOC Optional VGA CMOS Digital Image Sensor Full Sensor Features 1/6-Inch SOC Optional VGA CMOS Digital Image Sensor Product Brief ST9V112-S Select (SOC0366) ST9V112-G General (0366) (Mfg part number K12A [packaged] / Mfg part number K12A [die])

Contextual Info: T H AT Corporation Pre-trimmed Low-voltage Low-power Analog Engine IC THAT 4320S FEATURES APPLICATIONS • Companding noise reduction · Pre-trimmed VCA & RMS detector · Wireless microphones · Wide supply voltage range: 4.5V~16V · Wireless instrument packs

12o9

Abstract: K12D K12C 1 5N
Contextual Info: K12 High Performance Key Switches Features/Benefits • Excellent tactile feel • Wide choice of LED colors, • • • • • travel and actuator forces High reliability / long life Sealed version available Designed for low-level switching Double stroke version available

K12A53D

Contextual Info: K12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A53D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

K12A45D

Abstract: TK12A45D
Contextual Info: K12A45D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K12A45D ○ スイッチングレギュレータ用 : Vth = 2.0～4.0 V (VDS = 10 VID = 1 mA) 0.69 ± 0.15 Ф0.2 M A 記号 定格 単位 ド レ イ ン ・ ソ ー ス 間 電 圧

TK12A45D

Abstract: K12A45D
Contextual Info: K12A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A45D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.43 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)