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    K12A60 Search Results

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    K12A60 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TK12A60D(STA4-Q-M)

    MOSFET N-CH 600V 12A TO220SIS
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    DigiKey TK12A60D(STA4-Q-M) Tube 64 1
    • 1 $3.96
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    • 100 $1.81
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    Toshiba America Electronic Components TK12A60W-S4VX

    MOSFET N-CH 600V 11.5A TO220SIS
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    DigiKey TK12A60W-S4VX Tube 48 1
    • 1 $3.62
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    Toshiba America Electronic Components TK12A60U(Q-M)

    MOSFET N-CH 600V 12A TO220SIS
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    DigiKey TK12A60U(Q-M) Tube
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    Toshiba America Electronic Components TK12A60D(STA4,Q,M)

    Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220SIS - Bulk (Alt: 72AK4438)
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    Avnet Americas () TK12A60D(STA4,Q,M) Bulk 1
    • 1 $3.38
    • 10 $2.07
    • 100 $1.78
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    TK12A60D(STA4,Q,M) Tube 16 Weeks 50
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    Mouser Electronics () TK12A60D(STA4,Q,M) 199
    • 1 $3.96
    • 10 $2.01
    • 100 $1.86
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    TK12A60D(STA4,Q,M) 199
    • 1 $3.96
    • 10 $2.01
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    Newark TK12A60D(STA4,Q,M) Bulk 2,140 1
    • 1 $0.61
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    EBV Elektronik TK12A60D(STA4,Q,M) 19 Weeks 50
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    Toshiba America Electronic Components TK12A60W,S4VX

    - Rail/Tube (Alt: TK12A60W,S4VX)
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    Avnet Americas TK12A60W,S4VX Tube 16 Weeks 50
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    • 100 $1.17
    • 1000 $1.08
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    Mouser Electronics () TK12A60W,S4VX 100
    • 1 $3.25
    • 10 $2.43
    • 100 $1.70
    • 1000 $1.32
    • 10000 $1.24
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    TK12A60W,S4VX 99
    • 1 $3.70
    • 10 $2.19
    • 100 $1.60
    • 1000 $1.15
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    Bristol Electronics TK12A60W,S4VX 450
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    Find more K12A60 price and stock on Findchips.com

    K12A60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K12A60U

    Abstract: TK12A60U k12a60 code MCV marking MCV
    Contextual Info: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U K12A60U TK12A60U k12a60 code MCV marking MCV PDF

    K12A60U

    Abstract: K12A k12a60
    Contextual Info: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U K12A60U K12A k12a60 PDF

    K12A60D

    Abstract: TK12A60D
    Contextual Info: K12A60D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K12A60D ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.5 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 600 V)


    Original     		TK12A60D K12A60D TK12A60D PDF

    K12A60U

    Abstract: k12a60 TK12A60U VDS208
    Contextual Info: K12A60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 K12A60U ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.36Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.0 S (標準)


    Original     		TK12A60U SC-67 2-10U1B 20070701-JA K12A60U k12a60 TK12A60U VDS208 PDF

    k12a60

    Abstract: k12a60d
    Contextual Info: K12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK12A60D k12a60 k12a60d PDF

    K12A60D

    Abstract: TK12A60D k12a60d circuits k12a60 K12A K12A60D transistor K12A60D transistor data K-12A TK-12A
    Contextual Info: K12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK12A60D K12A60D TK12A60D k12a60d circuits k12a60 K12A K12A60D transistor K12A60D transistor data K-12A TK-12A PDF

    Contextual Info: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U PDF

    K12A60D

    Abstract: TK12A60D k12a60d circuits K12A60D transistor k12a60 K12A K12A60D transistor data
    Contextual Info: K12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK12A60D K12A60D TK12A60D k12a60d circuits K12A60D transistor k12a60 K12A K12A60D transistor data PDF

    K12A60D

    Abstract: TK12A60D k12a60
    Contextual Info: K12A60D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K12A60D ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.5 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 600 V)


    Original     		TK12A60D K12A60D TK12A60D k12a60 PDF

    Contextual Info: K12A60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 K12A60U ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.36Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.0 S (標準)


    Original     		TK12A60U PDF

    k12a60

    Abstract: K12A60U TK12A60U transistor K12A
    Contextual Info: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U k12a60 K12A60U TK12A60U transistor K12A PDF

    Contextual Info: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U PDF

    k12a60d

    Contextual Info: K12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK12A60D k12a60d PDF

    k12a60

    Abstract: K12A60U TK12A60U k12a6 K12A
    Contextual Info: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U k12a60 K12A60U TK12A60U k12a6 K12A PDF